ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The effect of successive double implantation of Ag+(Cu+) and Xe+ ions on the recombination properties of CdxHg1−x Te (0.2〈x〈0.3) crystals has been investigated. It is shown that after implantation of ions of one chemical element, followed by diffusion thermal annealing at temperatures below 150–200 K, recombination through local levels lying 30±5 meV below the conduction band bottom dominates. Successive double implantation of Ag+(Cu+) and Xe+ ions followed by diffusion thermal annealing changes the course of the temperature dependence of the lifetime of the nonequilibrium charge carriers. It was determined that for CdxHg1−x Te crystals with x⋍0.20–0.25 in the temperature interval 700–200 K the lifetime of the nonequilibrium charge carriers is low (τ〈0.15 µs) and does not depend on the temperature. For CdxHg1−x Te crystals with x⋍0.3 recombination of nonequilibrium charge carriers occurs through two types of levels: in the temperature range 140–200 K — deep levels E t1⋍E c −51 meV and at lower temperatures (77–140 K) — through shallower levels E t2⋍E c −(16±2) meV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187061
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