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  • 1995-1999  (381)
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  • 1
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    RESPONSIVE-TO-ANTAGONIST1, a Menkes/Wilson Disease–Related Copper Transporter, Is Required for Ethylene Signaling in Arabidopsis (1999)
    Cell Press
    Details
    Publication Date: 1999-04-01
    Print ISSN: 0092-8674
    Electronic ISSN: 1097-4172
    Topics: Biology , Medicine
    Published by Cell Press
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    PAPER CURRENT
  • 2
    Electronic Resource
    Electronic Resource
    Formation of two-dimensional electron and hole gases in undoped AlxGa1−xAs/GaAs heterostructures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 588-590 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Two-dimensional electron or hole gases (2DEG or 2DHG) are confined at the same interface in an undoped heterostructure by an electric field generated by a top gate. The combination of ion-implanted ohmic regions, an undoped heterostructure with superlattice barriers, and a metal gate is used to fabricate structures by a conventional process without self-alignment. High-quality 2DEG and 2DHG with a carrier density up to 8×1011 cm−2 are formed with a small gate leakage current. Switching between 2DEG and 2DHG at the same heterointerface is achieved by changing the sign of the gate voltage. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362722
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  • 3
    Electronic Resource
    Electronic Resource
    Improvement of Co71Cr19Pt10/Ti90Cr10 perpendicular recording media by independent optimization of film nucleation and growth processes : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5359-5361 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CoCrPt/TiCr perpendicular recording media having independently optimized nucleation and growth conditions have been prepared by changing the argon pressure during sputter deposition of each film. A low argon pressure CoCrPt nucleation layer produces strong c-axis perpendicular orientation that can be maintained during continued CoCrPt deposition at high argon pressure. The two-layer media combines increased particle separation from high pressure growth and strong orientation to produce higher signal to noise ratio than either high pressure or low pressure single layer CoCrPt media. TiCr underlayers, despite poor orientation and a noncolumnar structure, improve CoCrPt c- axis perpendicular orientation. Low argon pressure during TiCr deposition maximizes CoCrPt orientation. A TiCr bilayer having a low pressure nucleation layer followed by a high pressure growth layer improves performance of the subsequent CoCrPt layer. A TiCr bilayer having a high pressure growth layer followed by a thin low pressure template produces even greater recording performance enhancement. This media has Hc=2560 Oe, D50=90 kfci and S0/Nd at 240 kfci=4.0. An identical CoCrPt layer deposited on the low pressure TiCr underlayer has Hc=1850 Oe, D50=80 kfci and S0/Nd at 240 kfci=2.4. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361855
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  • 4
    Electronic Resource
    Electronic Resource
    Ferromagnetic Mn/C/Si films (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2132-2134 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ferromagnetism at room temperature has been found in Mn/C/Si films prepared by sequential deposition of these elements at a substrate temperature about 360 °C by vacuum evaporation. The saturation magnetization increases rapidly with the carbon quantity, and it is about 250 emu/cc for a film with a nominal structure of Mn(6 nm)/C(0.5 nm)/Si(6 nm). The magnetization measurements at low temperatures show that the magnetic moment per ferromagnetic Mn atom corresponds to more than 1.2 Bohr magnetons. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360195
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  • 5
    Electronic Resource
    Electronic Resource
    Computer simulation of ultrahigh-density perpendicular magnetic recording : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5664-5666 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The possibility of ultrahigh-density recording higher than 10 Gb/in.2 with perpendicular magnetic recording is investigated by computer simulation for a ring-type head and single-layer medium combination. A nucleation model is used as a media model because it incorporates a nucleation site, which causes irreversible magnetization switching. Fundamental read–write characteristics are found to be entirely different from those of longitudinal recording. Recorded magnetization strongly depends on head field strength; the maximum magnetization appears around the head field strength of media coercivity, and beyond this the recorded magnetization decreases abruptly. Spacing loss in the recording process also depends on head field strength and recording density. However, saturation recording can be attained even at an ultrahigh recording density of 600 kFCI with a spacing of 30 nm. Also, a higher signal-to-noise ratio than in longitudinal recording can be obtained by introducing weak intergrain exchange interaction with a relatively large grain size in the media film. This suggests that perpendicular magnetic recording is stable in thermal fluctuation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362209
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  • 6
    Electronic Resource
    Electronic Resource
    Analysis of oxide–nitride–oxide/Si(111) interfaces by optical second harmonic generation and secondary ion mass spectroscopy (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4146-4151 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use optical second harmonic generation and secondary ion mass spectroscopy (SIMS) to study oxide–nitride–oxide (ONO)/Si(111) interfaces. We explain the relationship between the second harmonic (SH) intensity from the interfaces and the SIMS depth profiles. The intensity from the wet oxide/Si(111) interface decreases as the temperature during wet oxidation increases, because the number of interface dangling bonds is reduced as the wet temperature is increased. With subsequent nitridation, this SH intensity of the oxidized interface decreases. This is because hydrogen and nitrogen terminate the interface dangling bonds. However, the SH intensity increases again with reoxidation, because the dangling bonds grow again at the interface. The SH intensity from annealed nitridation of the oxide/Si(111) interface remains constant, although the number of hydrogen atoms decreases and the number of nitrogen atoms slightly increases. We propose two reasons for this. One is that most of the desorbed hydrogen atoms do not terminate the dangling bonds at the interface. The other is that interface dangling bonds grow temporarily due to desorbed hydrogen; however, nitrogen piled up near the interface terminates them again. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361780
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  • 7
    Electronic Resource
    Electronic Resource
    Model for the substrate hole current based on thermionic hole emission from the anode during Fowler–Nordheim electron tunneling in n-channel metal-oxide-semiconductor field-effect transistors (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3277-3282 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model is proposed to explain the dependence of the substrate hole current in n-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) on applied electric field and on oxide thickness. Two types of devices were prepared: n-channel MOSFETs with gate oxides of 67, 86, and 131 A(ring) and p-channel MOSFETs in which gate oxide thicknesses were almost equal to those in the n-channel MOSFETs. The carrier-separation technique was used in the p-channel MOSFETs, and the average energy of hot electrons entering the silicon substrate was obtained. The average energy of the hot electrons is related to the energy distribution of hot holes created by hot electrons emitted from the oxide into the n+ polysilicon gate during the Fowler–Nordheim electron tunneling in the n-channel MOSFETs. The substrate hole current is numerically modeled as thermionic emission of the hot holes overcoming the energy barrier at the oxide-n+ polysilicon interface. For the gate oxides ranging from 67 to 131 A(ring), the dependence of the substrate hole current on the electric field and on oxide thickness is explained by using the average energy of the hot electrons and the thermionic hole emission model. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358681
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  • 8
    Electronic Resource
    Electronic Resource
    Determination of photoluminescence mechanism in InGaN quantum wells (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2241-2243 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the unambiguous experimental determination of the photoluminescence mechanism in a set of In0.25Ga0.75N quantum wells. Instead of studying the photoluminescence for different In contents, we have investigated it as a function of the quantum well width in combination with a similar study performed on GaN quantum wells. In this way, we show that the photoluminescence is not coming from quantum dots or very localized states in the quantum well, but from the quantum well itself under the influence of a piezoelectric field induced by strain. The previously reported abnormal photoluminescence shifts and temperature dependencies can thus be explained. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124977
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  • 9
    Electronic Resource
    Electronic Resource
    Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1736-1738 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate photoluminescence (PL) from self-assembling InGaN quantum dots (QDs), which are artificially fabricated on AlGaN surfaces via metalorganic chemical vapor deposition. InGaN QDs are successfully fabricated by the growth mode transition to three-dimensional nanoscale island formation by using "antisurfactant" silicon on AlGaN surface. The diameter and height of the fabricated InGaN QDs are estimated to be ∼10 nm and ∼5 nm, respectively, by an atomic-force microscope (AFM). Indium mole fraction of InxGa1−xN QDs is controlled from x=∼0.22 to ∼0.52 by varying the growth temperature of QDs. Intense photoluminescence is observed even at room temperature from InGaN QDs embedded with the GaN capping layers. In addition, from the temperature dependence of the PL-peak energy, we convincingly show that the PL emission actually comes from the InGaN QDs. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121168
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  • 10
    Electronic Resource
    Electronic Resource
    Two-dimensional electron gas formed in a back-gated undoped heterostructure (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1745-1747 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using a back-gate operation, a high-quality two-dimensional electron gas (2DEG) is formed in an undoped GaAs/AlGaAs inverted heterostructure. A high mobility of around 3×106 cm2/V s at 1.6 K is obtained for the structure without any compensating surface doping. The electron density is controllable down to 7×109 cm−2. The relation between electron density and mobility is studied for samples both with and without a surface gate. The obtained results indicate that background impurities and an inhomogeneity of the electric field coming from the surface govern the mobility in a low-electron-density region and that the interface inhomogeneity becomes important at a high electron density. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121171
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