Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
79 (1996), S. 3282-3285
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A wet thermal oxidation method is proposed to passivate the electrochemically etched porous silicon. Bright and stable photoluminescence is achieved by wet oxidation at relatively low temperatures of 400–500 °C. The Fourier transform infrared absorption shows that the formation of SiH(O3), SiH(SiO2), SiH2(O2) bonds may be responsible to the stabilization of luminescence under the laser illumination. © 1996 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.361226
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