ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract The deposition of an amorphous ZnTe seed layer of thickness 10 nm and its subsequent solid-phase crystallization are implemented prior to the start of molecular-beam epitaxy of ZnTe layers on GaAs(100) substrates. RHEED patterns from the growth surface of the samples during epitaxy confirm that the formation of three-dimensional nucleation centers is successfully eliminated by this technique, and two-dimensional growth in the early stage of epitaxy is achieved. Cathodoluminescence and x-ray structural analyses indicate a higher quality on the part of ZnTe layers grown with the application of an amorphous ZnTe layer. Quantum-well ZnCdTe/ZnTe structures that emit efficiently in the green region of the spectrum can be grown by optimizing the epitaxy regimes.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1187774
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