Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 1362-1364
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
It has been found that the electron capture transients of the individual DX levels in Si-doped AlGaAs include two regimes: net capture and redistribution. In this letter, by analyzing both of these regimes, the electron capture kinetics of DX centers are determined for the first time. It is found that the capture rate for an empty state is proportional to the square of the free carrier concentration. These kinetics are predicted only by the negative U model in which two electrons are captured sequentially via an intermediate one-electron state.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105309
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