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  • capacitance measurement  (1)
  • smart sensor system  (1)
  • 1995-1999  (2)
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  • 1995-1999  (2)
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  • 1
    ISSN: 1573-1979
    Keywords: sensor interface ; capacitance measurement ; capacitive sensor
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract A low-cost CMOS integrated interface for capacitivesensors is presented. The interface is composed of two separatechips: a capacitance-controlled oscillator and a selector, whichresult in a structure that is able to measure several capacitancesaccurately and has a microcontroller-compatible output. In thisinterface, even large parasitic capacitances of up to 3 nF betweenthe terminals of the capacitor to be measured and ground areallowed. Prototypes of the interface chips have been fabricatedin a 0.7-µm CMOS process. The frequency of theoscillator amounts to 90 kHz. For the capacitance measurement,the interface has a resolution of 11.3 ppm and a nonlinearityof 300 ppm over a measurement range of 2 pF. In this paper, alsothe application of the interface in an accurate capacitive angularencoder is discussed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Analog integrated circuits and signal processing 14 (1997), S. 249-260 
    ISSN: 1573-1979
    Keywords: transducer interface ; smart sensor system ; smart sensor interface ; bridge interface ; captive interface ; universal transducer interface
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: Abstract This paper presents a new universal transducer interface.This interface, which is read out by a microcontroller, servicesthe following sensor elements: capacitors, platinum resistors,thermistors, resistive bridges and potentiometers. The A/D conversionis based on a first-order oscillator. A combination of classicaland some new measurement techniques has been applied on a singlechip to obtain high accuracy, good long-term stability and areduction of the effects of interference and parasitic elements.The circuit has been fabricated in a 0.7 µm CMOSprocess. The main test results are: an accuracy of 10–15bits and a resolution up to 16 bits while the measurement timeis in the range 1–100ms. These results hold over the temperaturerange −20°C to 80°C. Calibrationof the electronic part is not required. The number of externalcomponents has been kept to a minimum.
    Type of Medium: Electronic Resource
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