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  • Articles  (3)
  • PACS: 68.55; 81.15 Z  (2)
  • Key words Arbuscular mycorrhizae  (1)
  • 1995-1999  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Abundance of arbuscular mycorrhizal fungi spores in different environments in a tropical rain forest, Veracruz, Mexico (1999)
    Springer
    Mycorrhiza 8 (1999), S. 267-270 
    Details
    ISSN: 1432-1890
    Keywords: Key words Arbuscular mycorrhizae ; Tropical rain forest ; Gaps ; Mexico
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  The aim of this study was to compare mycorrhizal abundance and diversity in sites with different regimes of disturbance in a tropical rain forest at Los Tuxtlas, Veracruz, Mexico. Arbuscular mycorrhizal spores were quantified at two sites: closed canopy and gaps in the forest. Data were recorded during dry, rainy, and windy ("nortes") seasons. Spores of eight Glomus species, sporocarps of three Sclerocystis species, three species of Acaulospora and two of Gigaspora were found. Significant differences in the number of species and spores were found among seasons. The highest numbers of species and spores were observed during the dry season, with a marked decrease during the rainy season. Our results show that disturbance does not but seasonality does affect abundance and richness of mycorrhizal spores in this tropical wet forest.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s005720050244
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  • 2
    Electronic Resource
    Electronic Resource
    Influence of laser-ablation plume dynamics on the room-temperature epitaxial growth of CeO2 on silicon (1999)
    Springer
    Applied physics 69 (1999), S. S815 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.55; 81.15 Z
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. High-quality epitaxial CeO2 thin films were obtained on Si(001) buffered with a yttria-stabilised zirconia layer by pulsed laser deposition. Although the best structural properties were achieved at high substrate temperature, high-quality epitaxy was obtained even at room temperature. Epitaxial growth at low temperature is promoted by the high kinetic energy of particles reaching the substrate. The oxygen pressure and target–substrate distance had a strong influence on the crystallographic structure and surface morphology in low-temperature deposition. This behaviour is attributed to a change in the kinetic energy of the particles, which was evaluated from the plasma expansion velocity determined by an intensified CCD camera. If a shock wave forms, a minimum substrate temperature of 550 °C is necessary for epitaxial growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390051537
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  • 3
    Electronic Resource
    Electronic Resource
    Room-temperature epitaxial growth of CeO2(001) films on YSZ buffered Si(001) substrates (1998)
    Springer
    Applied physics 67 (1998), S. 455-457 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.55; 81.15 Z
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: 2 (001) epitaxial thin films deposited on Si(001) with yttria-stabilized zirconia buffers have been obtained for the first time at room temperature by pulsed-laser deposition. The influence of oxygen pressure on the crystal quality of CeO2 was studied for the films deposited at 100 °C. The rocking curve full width at half maximum of the CeO2(002) peak for films deposited at room temperature and 100 °C was between 1° and 2°, for oxygen pressures below 3×10-2 mbar. The best crystal quality was obtained at around 3×10-3 mbar. Epitaxial growth at room temperature was confirmed by cross-sectional transmission electron microscopy. Scanning electron microscopy and atomic force microscopy revealed very smooth surfaces for oxygen pressure below 3×10-2 mbar, with rms roughness values around 0.3 nm over 5 μm×5 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050803
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