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  • 61.72.Tt  (1)
  • PACS: 72.20; 72.80; 78.65  (1)
  • 1995-1999  (2)
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  • 1995-1999  (2)
Year
  • 1
    Electronic Resource
    Electronic Resource
    Ion-implantation doping of crystalline 6H-SiC (1995)
    Springer
    Applied physics 61 (1995), S. 363-367 
    Details
    ISSN: 1432-0630
    Keywords: 72.80 ; 61.72.Tt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The feasibility of ion implantation for p- and n-type doping of 6H-SiC has been studied. Single crystals were implanted at room temperature with 1017 ions/cm3 of B and Al, and of N and P, respectively, and step-annealed at temperatures up to 1900 K. The state of the crystal order was monitored by ion-beam-scattering techniques. After annealing at 1800 K, at a backscattering yield of about 1% in 〈0001〉-direction, maximum electrical activity of all dopants was observed within the range of 3–80% at room temperature. Impurity ionization levels were derived from conductivity measurements in the temperature range between 300–80 K, which also indicate the presence of compensating defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540109
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  • 2
    Electronic Resource
    Electronic Resource
    Optical absorption and electronic transport in ion-implantation-doped polycrystalline SiC films (1995)
    Springer
    Applied physics 61 (1995), S. 193-201 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 72.20; 72.80; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract  Fine-grained (d≈0.1 μm), polycrystalline SiC films were prepared on top of insulating and optically transparent sapphire substrates by means of a thermal crystallization technique. Optical absorption measurements indicate that the individual SiC grains consist of relatively defect-free β-SiC surrounded by high-defect density grain-boundary material. Nominally undoped material exhibits a low dc conductivity (σ≈10-8Ω-1 cm-1) in the dark and an efficient photoconductivity upon illumination with short-wavelength UV light. The temperature dependence of the dc transport exhibits a quasi-Arrhenius-type behaviour with average activation energies of the order to 0.6 eV. A characteristic feature of this kind of transport is a continuous increase in activation energy with increasing film temperature. Upon doping with N, P and Al ions, the average activation energy is decreased and room temperature conductivities of the order of 0.1 Ω-1 cm-1 are reached. Doping with B ions, on the other hand, only leads to high-resistivity material. It is shown that the electronic transport in doped SiC-On-Sapphire (SiCOS) films can be successfully modelled in terms of a grain-boundary-dominated conduction process. In this process thermal activation across potential barriers at the grain-boundary surfaces competes with tunneling through these same barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050190
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