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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1813-1815 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth of noncrystalline diamond thin film on Si(001) surface has been observed using high-resolution transmission electron microscopy. The epitaxial lattice relationship at diamond/Si interface has been described based on a cube-cube orientation with a≈7° tilt plus a rotation of the diamond lattice from the substrate lattice. The observed epitaxial behavior can be explained by the 3:2 lattice coincidence and the introduction of interfacial misfit dislocations. © 1996 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 3340-3345 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We describe an experiment to produce high density pure electron plasmas in a cryogenic Penning trap. The apparatus and its operation are described in detail. A brief summary of data acquired to date and its interpretation are given. Possible uses and future work are mentioned. © 1997 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 985-993 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Schottky diodes fabricated on in situ doped n-type Si/Si1−x−yGexCy/Si heterostructures grown by chemical vapor deposition were used for admittance spectroscopy in order to study the impact of carbon on the conduction band offsets. Samples with a nominal Ge concentration of 20 at. % and carbon fractions up to 1.3 at. % were studied. In these experiments, the measurement frequency was swept continuously from 1 kHz to 5 MHz, and the temperature was scanned in small increments from 20 to 300 K. Admittance signals in these samples were found to originate from three sources, namely doping freeze-out, band offsets, and traps. Signals arising from the band offsets indicate a conduction band edge lowering for Si/Si1−x−yGexCy of ∼33±22 meV/at. % C. A trap-related admittance signal at an energy of 228±25 meV below the Si conduction band was observed in the Si1−x−yGexCy sample with the highest C fraction (1.3 at. %). The trap energy measured by admittance spectroscopy is in close agreement with the activation energy of 230 meV, which has been reported in the literature for a complex involving interstitial carbon. The conduction band offset in a Si/Si1−yCy sample with 0.95 at. % C was also measured by both admittance spectroscopy and Schottky capacitance–voltage profiling. The two techniques yield excellent agreement, with Si/Si0.9905C0.0095 conduction band offsets of 48±10 and 55±25 meV, respectively. © 1999 American Institute of Physics.
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  • 4
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-cooled 9Be+ ions confined in a Penning trap were directly observed, and the images were used to characterize the structural phases of the ions. With the ions in two-dimensionally extended lattice planes, five different stable crystalline phases were observed, and the energetically favored structure could be sensitively tuned by changing the areal density of the confined ions. Qualitatively similar structural phase transitions occur or are predicted to occur in other planar single-component systems with a variety of interparticle interactions. Closed-shell structures were observed with small ion clouds that were spherical or prolate, and crystals with long-range order were observed in the centers of clouds with large numbers of ions. These experimental results are in good agreement with theoretical predictions for the strongly coupled one-component plasma.
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  • 5
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Rotating asymmetric electric fields have been applied to control the rotation frequency (and hence the density) of non-neutral plasmas, which are confined in Penning-type traps and have relaxed close to thermal equilibrium characterized by a global rigid-body rotation. "Infinite" confinement times and density compression were first reported for uncorrelated plasmas of ∼108 Mg+ ions with temperatures ranging from 1 K to 5×104 K (4 eV) [Huang et al., Phys. Rev. Lett. 78, 875 (1997)]. In this paper, the rotating field technique has been applied to control strongly coupled plasmas of ∼105 9Be+ ions which are laser-cooled to millikelvin temperatures so that the plasma freezes into a solid with a crystalline lattice. Here, Bragg diffraction peaks from crystals provide an accurate way of measuring the rotation frequency, and it is observed that the plasma rotation can be phase locked to the applied rotating field without any slip. In essence, these corotating plasmas have reached thermal equilibrium with the rotating field, and the azimuthally asymmetric boundaries of the equilibrium states have been measured experimentally. Both rotating dipole and quadrupole fields have been used to provide this precise control of the plasma rotation. However, the effectiveness of the dipole field depends on the presence of multiple ion species. With the rotating dipole field, density compression to near the Brillouin limit and increase of the rotation frequency to near the cyclotron frequency have been achieved.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 8 (1996), S. 1828-1841 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pure electron plasma columns are contained inside hollow conducting cylinders in an axial magnetic field. In the 2D E×B drift approximation, an electron column is a vortex evolving in (r,θ) according to the Euler equation. First the center-of-mass orbits of two vortices sufficiently well-separated to be stable to merger are characterized. Equilibria are observed in which the vortices orbit about the center of the cylinder, with either oscillations about stable equilibria or exponential divergence away from unstable equilibria. The equilibrium positions, oscillation frequencies, and instability rates for these spatially extended vortices agree well with the predictions of point vortex theory, apparently because surface waves and shape distortions do not couple significantly to the center-of-mass motion. Next, the merger of two vortices with unequal radii is quantified. Merger is accompanied by the formation of filamentary arms, and results ultimately in an axisymmetric central core surrounded by a lower density halo. The self-energy of the merged core is found to be roughly the sum of the self-energy of the merging vortices. The fraction of the total circulation entrained into the core varies from 70% to 90% as the ratio of the initial vortex radii is varied from 1:1 to 2:1. The point-like vortex dynamics and the circulation loss with merger are both consistent with the "punctuated Hamiltonian'' models of decaying turbulence. © 1996 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 891-893 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cr films sputtered onto {100} Si substrates at room temperature were found to be under residual tension, as revealed by wafer curvature measurements. A 150 nm thick Cr film was bombarded with 300 keV Ar ions after deposition. The intrinsic residual tensile stress increased slightly and then decreased with further increase in the ion dose. For ion doses 〉1×1015 ions/cm2, the stress in the film became compressive and increased with increasing dose. Transmission electron microscopy revealed that the grain boundaries in as-deposited Cr have columnar porosity. A Cr film, ion irradiated to a dose of 5×1015 ions/cm2, showed no grain boundary porosity. The changes in the residual stress during ion irradiation are explained by considering Ar incorporation in the film and the manner in which irradiation may change the interatomic distances and forces. © 1998 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1688-1690 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation of carbon in Si1−yCy alloys grown using silane and methylsilane by low-pressure rapid thermal chemical vapor deposition is investigated. Substitutional carbon content determined by x-ray diffraction analysis is compared to total carbon concentration measured by secondary ion mass spectrometry. Lower growth temperatures (〈600 °C) and higher silane partial pressures are observed to significantly improve substitutional carbon incorporation. At 550 °C, to within experimental error, fully substitutional carbon incorporation is observed over the range of compositions studied (0–1.8 at. % carbon). Fourier transform infrared spectroscopy is also used to verify the presence of substitutional carbon. © 1997 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2103-2105 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The deposition of thin alternating layers of Cu and Nb on Si(100) substrates has been studied by transmission electron microscopy as a function of layer thickness. For layer thickness above 25 Å, there is a strong texture orientation relationship with the close packed planes of fcc Cu parallel to close packed planes of bcc Nb, forming the so-called "Kurdjumov-Sachs" orientation relationship. However, at thicknesses of under 12 Å, the Cu is constrained to grow as a slightly distorted bcc structure. It is thought that, when it reaches a critical thickness between 12 and 20 Å, the bcc Cu loses coherency and transforms martensitically to the fcc phase, resulting in the observed Kurdjumov–Sachs orientation relationship. Electron energy loss spectroscopy observations indicate a difference of 2 eV in the L3 edge suggesting that the Fermi energy is lower in the constrained bcc form of Cu than in the equilibrium fcc structure. © 1997 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2286-2288 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal–oxide–semiconductor (MOS) capacitors were fabricated on in situ doped n- and p-type Si1−yCy/Si heterostructures grown on Si substrates by chemical vapor deposition. Strained Si1−yCy epitaxial layers with substitutional carbon contents up to 1.6% were studied. High frequency and quasistatic capacitance–voltage (C–V) measurements exhibit well-behaved MOS characteristics, indicating high electronic material quality. Band alignments were extracted from MOS C–V measurements and one-dimensional device simulations performed over a range of temperatures. The conduction band energy of strained Si1−yCy is lower than that of Si by approximately 65 meV for 1 at. % carbon, while the valence band shows negligible offset to Si valence band. © 1998 American Institute of Physics.
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