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  • Springer  (57)
  • International Union of Crystallography (IUCr)  (1)
  • 1995-1999  (58)
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Keywords
Publisher
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Observations of inclusions of polymeric additives in copper electrodeposits by transmission electron microscopy (1995)
    Springer
    Journal of applied electrochemistry 25 (1995), S. 890-890 
    Details
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00233911
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  • 2
    Electronic Resource
    Electronic Resource
    Observations of inclusions of polymeric additives in copper electrodeposits by transmission electron microscopy (1995)
    Springer
    Journal of applied electrochemistry 25 (1995), S. 890-894 
    Details
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00772211
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  • 3
    Electronic Resource
    Electronic Resource
    Viscous flow and MOS properties of MgF2−B2O3−GeO2−SiO2 glasses with ionic bonds (1996)
    Springer
    Journal of applied electrochemistry 26 (1996), S. 551-553 
    Details
    ISSN: 1572-8838
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01021981
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  • 4
    Electronic Resource
    Electronic Resource
    Crosslinking effects on the release force of addition cure silicone release agents in model systems (1998)
    Springer
    Polymer bulletin 41 (1998), S. 77-84 
    Details
    ISSN: 1436-2449
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Summary Crosslinking effects on the release force of some addition curable silicones in a model system have been investigated. The release force at several release speeds and the contact angles of ethyleneglycol on release papers coated by release agents having different crosslinking densities were estimated. Physical properties of model release agents in the bulk were also measured in bulk. We found that release force at a low speed is affected by the wetability of the surfaces and release force at a high speed is affected by the bulk crosslinking density.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002890050335
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  • 5
    Electronic Resource
    Electronic Resource
    Application of BaF2-B2O3-GeO2-SiO2 glasses to metal-oxide-silicon field-effect transistors (1995)
    Springer
    Applied physics 61 (1995), S. 377-380 
    Details
    ISSN: 1432-0630
    Keywords: 68.35 ; 68.45 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The capacitance and voltage characteristics of field effect transistors passivated by BaF2-B2O3-GeO2-SiO2 glasses with various water contents were investigated. As the OH absorption coefficients of the glass increased, adverse effects on the recovery of hysteresisC-V curve shifts was seen. The water content is related to the fluoride content of the BaF2−B2O3−GeO2−SiO2 glass. The viscous flow point of the glass was lowered with increasing ionic character obtained from Hannay's equation. The source-drain current and voltage (I-V) characteristics of typical enhancement and depletion mode field effect transistors passivated with these glasses were investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540111
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  • 6
    Electronic Resource
    Electronic Resource
    Ionic character of SrF2–B2O3–GeO2–SiO2 glasses for viscous flow and their applications to MOS capacitors (1996)
    Springer
    Applied physics 62 (1996), S. 313-315 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.35; 68.45; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  The capacitance and voltage (C–V) characteristics of metal, oxide, and semiconductors (MOS) capacitors passivated by SrF2–B2O3–GeO2–SiO2 glasses with various water and fluoride contents were investigated. As the OH- absorption coefficient of a glass increased, adverse effects on the recovery of shifts of the hysteresis C–V curve have been observed. The water content of ions is closely related to the fluoride content in the SrF2–B2O3–GeO2–SiO2 glass. The viscous-flow transition point of glass was lowered with increasing degree of ionic character obtained from Hannay’s equation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01594228
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  • 7
    Electronic Resource
    Electronic Resource
    Viscous flow and MOS properties of CaF2–B2O3–GeO2–SiO2 glasses with ionic bonds (1995)
    Springer
    Applied physics 62 (1995), S. 61-63 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.35; 68.45; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  The capacitance and voltage (C–V) characteristics of Metal-Oxide-silicon (MOS) capacitors passivated by CaF2–B2O3–GeO2–SiO2 glasses with OH− ions, water and fluoride contents were investigated. As the OH− absorption coefficients of the glass increased, adverse effects on the recovery of hysteresis C–V curve shifts was observed. The content of OH− ions is closely related to the fluoride content in the CaF2–B2O3–GeO2–SiO2 glass. The viscous-flow point of the glass was lowered with increasing degree of ionic character obtained from Hannay’s equation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01568088
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  • 8
    Electronic Resource
    Electronic Resource
    Viscous How and MOS properties of CaF2-B2O3-GeO2-SiO2 glasses with ionic bonds (1996)
    Springer
    Applied physics 62 (1996), S. 61-63 
    Details
    ISSN: 1432-0630
    Keywords: 68.35 ; 68.45 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The capacitance and voltage (C-V) characteristics of Metal-Oxide-silicon (MOS) capacitors passivated by CaF2B2O3-GeO2-SiO2 glasses with OH− ions, water and fluoride contents were investigated. As the OH− absorption coefficients of the glass increased, adverse effects on the recovery of hysteresis C-V curve shifts was observed. The content of OH− ions is closely related to the fluoride content in the CaF2 B2O3-GeO2-SiO2 glass. The viscous-flow point of the glass was lowered with increasing degree of ionic character obtained from Hannay's equation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01568088
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  • 9
    Electronic Resource
    Electronic Resource
    Ionic character of SrF2-B2O3-GeO2-SiO2 glasses for viscous flow and their applications to MOS capacitors (1996)
    Springer
    Applied physics 62 (1996), S. 313-315 
    Details
    ISSN: 1432-0630
    Keywords: 68.35 ; 68.45 ; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The capacitance and voltage (C-V) characteristics of metal, oxide, and semiconductors (MOS) capacitors passivated by SrF2-B2O3-GeO2-SiO2 glasses with various water and fluoride contents were investigated. As the OH− absorption coefficient of a glass increased, adverse effects on the recovery of shifts of the hysteresisC-V curve have been observed. The water content of ions is closely related to the fluoride content in the SrF2-B2O3-GeO2-SiO2 glass. The viscous-flow transition point of glass was lowered with increasing degree of ionic character obtained from Hannay's equation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01594228
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    Paper (German National Licenses)
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  • 10
    Electronic Resource
    Electronic Resource
    Application of BaF2–B2O3–GeO2–SiO2 glasses to metal-oxide-silicon field-effect transistors (1995)
    Springer
    Applied physics 61 (1995), S. 377-380 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.35; 68.45; 85.30
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  The capacitance and voltage characteristics of field effect transistors passivated by BaF2–B2O3–GeO2– SiO2 glasses with various water contents were investigated. As the OH absorption coefficients of the glass increased, adverse effects on the recovery of hysteresis C–V curve shifts was seen. The water content is related to the fluoride content of the BaF2–B2O3–GeO2–SiO2 glass. The viscous flow point of the glass was lowered with increasing ionic character obtained from Hannay’s equation. The source-drain current and voltage (I–V) characteristics of typical enhancement and depletion mode field effect transistors passivated with these glasses were investigated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540111
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