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  • American Institute of Physics (AIP)  (11)
  • 1995-1999  (11)
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Publisher
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Magnetic properties of epitaxial ferrite multilayer films : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5923-5925 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated and studied the structure and magnetic properties of high quality single crystalline (Mn,Zn)Fe2O4, NiFe2O4, and CoFe2O4 films. Although (Mn,Zn)Fe2O4 and NiFe2O4 films grown directly on SrTiO3 and MgAl2O4 show mediocre structural and magnetic properties, these same films grown on SrTiO3 and MgAl2O4 buffered with CoCr2O4 or NiMn2O4 exhibit excellent crystallinity and bulk saturation magnetization values, thus indicating the importance of lattice match and structural similarity between the film and the underlying layer. X ray, Rutherford backscattering spectroscopy, atomic force microscopy, and transmission electron microscopy analysis provide a consistent picture of the structural properties of these ferrite films. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361844
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  • 2
    Electronic Resource
    Electronic Resource
    Interlayer exchange coupling in amorphous/crystalline NiFe2O4 thin-film bilayers : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5926-5928 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphous/crystalline bilayers of NiFe2O4 exhibit interlayer magnetic exchange coupling, which results from an interaction between a spin-glass material and a ferrimagnetic material. The observed effect is reminiscent of the well-known exchange coupling effect between an antiferromagnet and a ferromagnet, which is widely used in applications where field biasing of thin magnetic films is desirable. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362173
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependent exchange anisotropy in single-crystal ferrite thin films (abstract) : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4989-4989 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Single-crystal bilayers of (magnetically soft) (Mn,Zn)Fe2O4 and (magnetically hard) CoFe2O4 can exhibit nearly ideal exchange anisotropy. This is directly related to the extremely high structural quality that can be achieved by epitaxial growth on appropriate substrates. For example, we use (110)-oriented MgAl2O4 substrates with 100 nm CoCr2O4 buffer layers. The paramagnetic buffer layer provides a close lattice match for the ferrites, and is annealed at about 1000 °C to provide excellent crystallinity. Subsequent growth of the ferrite bilayer is executed at 400 °C, which is high enough to permit growth of highly crystalline epitaxial films, yet low enough to avoid substantial intermixing at the interfaces. Measurements at elevated temperatures (290 K〈T〈1000 K) permit characterization of the exchange anisotropy in regimes of low and moderate crystal anisotropy in the soft layer, as well as directly revealing the blocking temperature and the portion of the overall magnetization contributed by each layer. The results provide additional evidence that the exchange coupling energy across the interface is comparable to that within each layer, and in that sense is nearly ideal. The detailed shapes of the M–H loops are found to be in semiquantitative agreement with micromagnetic theory. ©1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364962
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  • 4
    Electronic Resource
    Electronic Resource
    Fe-Cr-N soft magnetic thin films : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4042-4044 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Soft magnetic properties of new Fe-Cr-N and Fe-Cr-Ta-N alloy films have been investigated. Thin films with compositions in the range of Fe-2∼8% Cr-0∼1% Ta-5∼15% N (in at. %) were prepared by reactive sputtering in a nitrogen-containing atmosphere. The films, most likely nanocrystalline, exhibit excellent soft magnetic properties in the as-deposited condition without any post heat treatment, e.g., Hc∼1–2 Oe (79.4–158.8 A/m) and 4πMs∼15–20 kG. The easy-axis M-H loop is square. The hard-axis loop is linear and closed, with the anisotropy field Ha=20–60 Oe (1.59–4.77 kA/m). The combination of high 4πMs and relatively high Ha in these films is conducive to the suppression of the undesirable ferromagnetic resonance (FMR) interference up to the GHz frequency range. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364872
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  • 5
    Electronic Resource
    Electronic Resource
    Magnetic properties of epitaxial-doped manganite multilayer films (abstract) : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 4953-4953 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated and studied the structure and magnetic properties of high quality single crystalline (La0.7Ca0.3)MnO3 and (La0.7Ba0.3)MnO3 films. Films were grown on SrTiO3 as well as LaAlO3 substrates. (La0.7Ca0.3)MnO3 and (La0.7Ba0.3)MnO3 films grown on SrTiO3 exhibit excellent crystallinity and magnetic properties while those grown on LaAlO3 show mediocre structural and magnetic properties. These differences indicate the importance of lattice match and structural similarity between the film and the substrate. X-ray and Rutherford backscattering analysis provide a consistent picture of the structural properties of these doped manganite films. These films enable us to investigate the crystal anisotropy using vibrating sample magnetometry and torque magnetometry. Multilayers composed of manganite layers with different dopants (e.g., calcium and barium dopants) also have excellent structural properties since there is minimal strain at the interfaces. Such isostructural single crystalline multilayers are essential for investigating exchange coupling of the doped manganites.© 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365009
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  • 6
    Electronic Resource
    Electronic Resource
    High frequency properties of Fe–Cr–Ta–N soft magnetic films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3161-3163 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High frequency magnetic properties of a new, soft magnetic Fe–Cr–Ta–N alloy film have been investigated. Thin films with a composition of Fe-4.6% Cr-0.2% Ta-7.4% N (in atomic %) were prepared by reactive sputtering in a nitrogen-containing atmosphere. The films, most likely nanocrystalline, exhibit excellent soft magnetic properties in the as-deposited condition without any post heat treatment, e.g., Hc as low as 1.2 Oe (95.3 A/m) and 4πMs∼20 kG. The easy-axis M–H loop is square. The hard-axis loop is linear and closed, with the anisotropy field Ha=20–100 Oe (1.59–7.95 kA/m). By virtue of their high 4πMs and relatively high Ha, these soft magnetic films exhibit high permeability and low loss in the GHz frequency range with the undesirable ferromagnetic resonance interference suppressed to beyond 2 GHz. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119120
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  • 7
    Electronic Resource
    Electronic Resource
    Structure and magnetic properties of epitaxial spinel ferrite thin films (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 714-716 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have grown epitaxial spinel ferrite thin films of (Mn,Zn) Fe2O4 and CoFe2O4 on (100) and (110) SrTiO3 and MgAl2O4 buffered by spinel structure buffer layers. High quality spinel ferrite films were grown at 400 °C on buffer layers that were grown at 600 °C and postannealed at 1000 °C. Although (Mn,Zn) Fe2O4 grown directly on SrTiO3 and MgAl2O4 shows mediocre structural and magnetic properties, ferrite films grown on (100) and (110) SrTiO3 and MgAl2O4 buffered with CoCr2O4 exhibit excellent crystallinity and bulk saturation magnetization values, thus indicating the importance of lattice match and structural similarity between the film and the immediately underlying layer. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116601
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  • 8
    Electronic Resource
    Electronic Resource
    Amorphous lanthanide-doped TiOx dielectric films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3041-3043 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Addition of Nd, Tb, or Dy to amorphous Ti–O thin films is found to improve the dielectric properties of the films. Specifically, substitution of 10–30 at. % of the dopant for Ti is found to dramatically decrease the leakage current, increase the breakdown voltage, and yet retain the relatively high dielectric constant ε=50–110 in films 35 nm thick. The high-specific-capacitance a-Ti1−yMyOx films thus produced are suitable for incorporation into future Si integrated circuit technology, e.g., for storage capacitors in semiconductor memory circuits. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124058
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  • 9
    Electronic Resource
    Electronic Resource
    High dielectric constant Hf–Sn–Ti–O thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1967-1969 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High dielectric constant Hf–Sn–Ti–O thin-film materials were identified using a compositional-spread approach. Thin films of composition Hf0.2Sn0.05Ti0.75O2 prepared at 250 °C have excellent dielectric properties: 40–70-nm-thick films with a dielectric constant of 40–60 were obtained, depending on the processing conditions, yielding a specific capacitance of 9–17 fF/μm2. Breakdown fields were measured to be about 3–4 MV/cm, yielding a figure of merit εε0Ebr∼19 μC/cm2. Leakage currents, measured at 1 MV/cm, were in the range 10−7−10−6 A/cm2. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124887
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  • 10
    Electronic Resource
    Electronic Resource
    Magnetic film inductors for radio frequency applications (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 5247-5254 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Responding to the increasing demand for miniaturization and circuit integration of rf inductors we analyze various aspects of designing planar inductive circuits based on magnetic films as well as demonstrate substantially enhanced inductance characteristics for some prototype structures. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.366391
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