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  • American Institute of Physics (AIP)  (2)
  • 1995-1999  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Pulsed laser induced epitaxial crystallization of carbon–silicon alloys (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4118-4123 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonequilibrium Si1−xCx alloys produced by pulsed laser induced epitaxy from ion implanted Si have been studied in the concentration range from 0.35 to 3.8 at. % C. Films were formed by multiple energy ion implantation of carbon into {001} Si to produce nearly uniform composition profiles, followed by irradiation with a 308 nm, 30 ns excimer laser pulse. Heteroepitaxy proceeded from the underlying {001} Si through the carbon containing layer at approximately 5 m/s. Transmission electron microscopy, Fourier transform infrared spectroscopy, high resolution x-ray diffraction, ion channeling, and secondary-ion mass spectrometry were used to characterize the structure and composition. At low concentrations, the films are fully strained and the carbon is substitutional. At concentrations exceeding 1.4 at. % C, SiC precipitates were observed and the substitutional carbon concentration decreased. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361775
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  • 2
    Electronic Resource
    Electronic Resource
    Resistless, area-selective ultrashallow P+/N junction fabrication using projection gas immersion laser doping (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2320-2322 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The selective fabrication of ultrashallow p+/n junctions in silicon using projection gas immersion laser doping is reported. The method offers substantial improvement and simplification in junction formation to integrated circuit manufacturers, since several processing steps required for conventional doping techniques like ion implantation are eliminated. Spatially selective incorporation of boron into silicon without the use of any masking layer on the wafer surface is achieved. A pulsed excimer laser beam is patterned using a chromeless reticle and the pattern is transferred through a projection system onto a wafer that is kept in a BF3 dopant gas ambient. The depth of the fabricated junctions is 60 nm with a surface concentration of 5×1019 cm−3. The vertical and lateral distribution of boron in silicon after patterned laser processing is investigated using secondary ion mass spectroscopy (SIMS) and time-of-flight SIMS (ToF-SIMS). Vertical and lateral dopant profiles are steep and clearly resolved. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115844
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