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  • American Institute of Physics (AIP)  (2)
  • 1995-1999  (2)
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Publisher
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Ferromagnetic metal/semiconductor hybrid structures for magnetoelectronics (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5369-5371 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the following new ferromagnetic metal/semiconductor heterostructure material systems: (1) Fe/InAs(100)-4×2, (2) Fe/InAs(graded)/GaAs(100), and (3) Fe/InAs/AlSb/GaSb/AlSb/InAs/GaAs resonant tunneling diodes. Single crystal Fe films have been stabilized in these structures using molecular beam epitaxy growth, as evidenced by low energy electron diffraction. The magnetic and electrical properties have been studied using in situ (and focused) magneto-optical Kerr effect, alternating gradient field magnetometry, and current–voltage measurements. The results show that Fe/InAs based heterostructures are very promising systems for use in future magnetoelectronic devices as they have well defined magnetic properties as well as favorable electrical properties. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369980
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  • 2
    Electronic Resource
    Electronic Resource
    Spin-dependent electron transport at the ferromagnet/semiconductor interface (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 5804-5806 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A search for spin-dependent electron transport at the ferromagnet/semiconductor interface has been made by measuring the bias dependence of a photon excited current through the interface. A circularly polarized laser beam was used to excite electrons with a spin polarization perpendicular to the film plane. In samples of the form 3 nm Au/5 nm Ni80Fe20/GaAs (110), a significant transport current was detected with a magnitude dependent on the relative orientation of the spin polarization and the magnetization vector. At perpendicular saturation, the bias dependence of the photocurrent is observed to change in the range 0.7–0.8 eV when the helicity is reversed. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369925
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    Paper (German National Licenses)
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