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  • Articles  (33)
  • American Institute of Physics (AIP)  (29)
  • National Academy of Sciences  (4)
  • 1995-1999  (33)
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  • Articles  (33)
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Year
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  • 11
    Electronic Resource
    Electronic Resource
    Inverse Laplace transform and perturbation theory (1999)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 40 (1999), S. 369-382 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: We prove an extension of the result on the inverse Laplace transform. This extension will help toward making the applications of Borel techniques to perturbation theory in Quantum Field Theories be placed on a more rigorous foundation. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.532788
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  • 12
    Electronic Resource
    Electronic Resource
    Laser-micromachined millimeter-wave photonic band-gap cavity structures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1969-1971 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used laser-micromachined alumina substrates to build a three-dimensional photonic band-gap crystal. The rod-based structure has a three-dimensional full photonic band gap between 90 and 100 GHz. The high resistivity of alumina results in a typical attenuation rate of 15 dB per unit cell within the band gap. By removing material, we have built defects which can be used as millimeter-wave cavity structures. The resulting quality (Q) factors of the millimeter-wave cavity structures were as high as 1000 with a peak transmission of 10 dB below the incident signal. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114756
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  • 13
    Electronic Resource
    Electronic Resource
    Optimized dipole antennas on photonic band gap crystals (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3399-3401 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photonic band gap crystals have been used as a perfectly reflecting substrate for planar dipole antennas in the 12–15 GHz regime. The position, orientation, and driving frequency of the dipole antenna on the photonic band gap crystal surface, have been optimized for antenna performance and directionality. Virtually no radiated power is lost to the photonic crystal resulting in gains and radiation efficiencies larger than antennas on other conventional dielectric substrates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114906
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  • 14
    Electronic Resource
    Electronic Resource
    Microscopic nature of Staebler-Wronski defect formation in amorphous silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 371-373 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Light-induced metastable defects in a-Si:H are proposed to be silicon dangling bonds accompanied by pairs of hydrogen atoms breaking a silicon bond, forming a complex with two Si-H bonds. This supports the model of Branz. These defects are the analog of the H2* defect in c-Si and their energy correlates with the bond-angle strain. Several features of the annealing are well described by this defect complex. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120740
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  • 15
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance in La0.8Sr0.2FexCo1−xO3 (0.025≤X≤0.3) (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3150-3152 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical resistance and magnetoresistance of La0.8Sr0.2FexCo1−xO3 (0.025≤X≤0.3) have been studied at low temperatures down to 1.5 K and magnetic fields up to 7.5 T. The large magnetoresistance at high and low temperature has been found. The magnetoresistance exhibits a broad minima in the temperature interval between 150 and 50 K for all the compositions. The large magnetoresistance and its broad minima may be interpreted as the interplay of spin state transition, Jahn–Teller distortion, and orbital ordering of Co ions. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120273
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  • 16
    Electronic Resource
    Electronic Resource
    Enhanced stability of deuterium in silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3500-3502 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Tight-binding molecular dynamics has been used to simulate vibrationally excited Si–H and Si–D modes. Simulations find that vibrationally excited Si–D bending modes decay much more rapidly than Si–H bending modes, resulting in SiD bonds having much higher stability than SiH bonds. This provides a viable mechanism for reduced degradation in deuterated metal–oxide–semiconductor transistors and deuterated amorphous silicon devices. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121640
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  • 17
    Electronic Resource
    Electronic Resource
    Effect of roughness on the measurement of nanohardness—a computer simulation study (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1059-1061 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter reports a simulation study of depth sensing nanoindentation on a rough surface. The estimated mean hardness and scatter are both influenced by roughness, irrespective of whether there is a genuine variation in mechanical property with deformation volume/depth. The scatter due to roughness always decreases with penetration depth. The roughness dependency of hardness is the product of two terms. The first term is independent of property variation with deformation volume/depth and arises due to the discrete nature of multiple contacts during indentation. The second term is due to property variation with deformation volume/depth, as changing roughness changes the aggregate strength of each contact island. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119727
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  • 18
    Electronic Resource
    Electronic Resource
    Bond-length disorder and metastability in hydrogenated amorphous silicon (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2261-2263 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A model of metastable defect formation via H-rebonding in hydrogenated amorphous silicon is developed where the defect density and defect formation energy are controlled by the bond-length disorder of the material. The relaxation of thermal equilibrium defects is stretched exponential, with stretch parameters varying approximately linearly with temperature and relaxation times that are thermally activated. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115878
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  • 19
    Electronic Resource
    Electronic Resource
    Effect of substrate-induced strain on the charge-ordering transition in Nd0.5Sr0.5MnO3 thin films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 397-399 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the synthesis and characterization of Nd0.5Sr0.5MnO3 thin films grown by the pulsed laser deposition technique on [100]-oriented LaAlO3 substrates. X-ray diffraction (XRD) studies show that the films are [101] oriented, with a strained and quasi-relaxed component, the latter increasing with film thickness. We observe that transport properties are strongly dependent on the thickness of the films. Variable temperature XRD down to 100 K suggests that this is caused by substrate-induced strain on the films. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124387
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  • 20
    Electronic Resource
    Electronic Resource
    Dynamic fluorescence Stokes shift of an acetylene-bridged donor–acceptor compound in alcohols at low temperatures (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 102 (1995), S. 6456-6462 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The time-dependent fluorescence Stokes shift of p,p'-cyano thiomethyl diphenylacetylene in three different alcohols (1-propanol, 1-butanol, and 1-octanol) at room temperature was measured using time-correlated single photon counting and the spectral reconstruction method. These measurements were also performed with the probe in 1-propanol at low temperatures. The observed behavior is consistent with the dynamics of solvation of a polar excited state. As expected, the average solvation time increases with decreasing temperature and is correlated with solvent bulk viscosity down to 180 K. Apparent deviations observed at lower temperatures are attributed to the finite emission lifetime (≈1 ns) of the probe. A significant fast component (〈100 ps) is observed in the dynamic Stokes shift even at temperatures close to the freezing point of 1-propanol. Different mechanisms that could result in such a fast component are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.469360
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