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  • 1
    Electronic Resource
    Electronic Resource
    Edge resonant fluctuations and particle transport in a reversed-field pinch (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 4321-4327 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrostatic fluctuations are measured in the Extrap T2 reversed-field pinch [J. R. Drake et al., in Plasma Physics and Controlled Nuclear Fusion Research 1996 (International Atomic Energy Agency, Vienna, 1997), Vol. 2, pp. 193–199] using a Langmuir probe array. The electrostatic fluctuation, driven particle transport ΓnΦ is derived and found to constitute a large fraction of the total particle transport. The spectral density of all measured quantities exhibits a peak in the frequency range 100–250 kHz, which originates from fluctuations that are resonant close to the edge [n=−(40–80)]. This peak contains only about 10–20% of the total fluctuation power, but is shown to dominate ΓnΦ. The main reason for this is the high toroidal mode number as compared with internally resonant magnetohydrodynamic fluctuations. The edge resonant fluctuations also features a higher coherence (γ=0.5) and close to 90° phase shift between density and potential fluctuations. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873170
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  • 2
    Electronic Resource
    Electronic Resource
    Correlation between internal tearing modes and edge electrostatic fluctuations in a reversed-field pinch (1995)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 2 (1995), S. 2615-2617 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Edge electrostatic fluctuations, in the Extrap T1 reversed-field pinch [Nucl. Fusion 34, 427 (1994)], are observed to be correlated to internal tearing mode activity. Bispectral analysis of the edge electrostatic fluctuations shows the occurrence of nonlinear coupling between the low frequency internal tearing-mode-related activity and the high frequency, external, electrostatic fluctuations. In addition, the fluctuation levels of both the edge electrostatic fluctuations and the internal tearing modes have comparable scaling with plasma current. These results suggest that suppression of the internal tearing mode activity may decrease the edge electrostatic fluctuations and the related particle loss in the reversed-field pinch configuration. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.871224
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  • 3
    Electronic Resource
    Electronic Resource
    Millimeter wave polarimeter for characterizing high-power plasma heating systems (1999)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 70 (1999), S. 1994-1998 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have built a millimeter wave polarimeter which measures wave polarization parameters: the polarization angle, and the ellipticity including field spin direction in an evacuated high-power system. The polarimeter was applied to diagnose the 1 MW level electron-cyclotron plasma heating system at 110 GHz for the DIII-D tokamak. We have observed the time-dependent behavior of the gyrotrons and have characterized and calibrated the high-power transmission system which consists of grooved mirror polarizers, miter bends, switches, and corrugated wave guides. This article describes the principle of operation and the design method of the polarimeter and the examples of measurements. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1149701
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  • 4
    Electronic Resource
    Electronic Resource
    A simple, ultrahigh vacuum compatible scanning tunneling microscope for use at variable temperatures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 2557-2559 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present the construction of a very compact scanning tunneling microscope (STM) which can be operated at temperatures between 4 and 350 K. The tip and a tiny tip holder are the only movable parts, whereas the sample and the piezoscanner are rigidly attached to the body of the STM. This leads to an excellent mechanical stability. The coarse approach system relies on the slip-stick principle and is operated by the same piezotube which is used for scanning. As an example of the performance of the device, images of a NbSe2 surface with atomic resolution are obtained. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147213
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  • 5
    Electronic Resource
    Electronic Resource
    Performance of the extreme ultraviolet high resolution undulator beamline BW3 at Hasylab: First results and time-of-flight spectroscopy : Proceedings of the 5th international conference on synchrotron radiation instrumentation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 1732-1734 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The extreme ultraviolet beamline BW3 at Hasylab is a state of the art beamline for the energy range 15–2000 eV consisting of a triple undulator equipped with a modified high-flux SX-700 plane grating monochromator. The first three optical elements of the beamline are made of graphite coated with SiC to withstand the high heat load at the 4.5 GeV storage ring Doris III. Excellent spectral resolution of the order of 104 at the nitrogen K edge at 400 eV is obtained by replacing the elliptical focusing mirror of the original SX-700 design by a spherical mirror with very small tangent errors and with a large focal length in order to suppress spherical aberrations. In the energy range 50–1700 eV a photon flux of 1011–1013/s is obtained in a bandpass of 0.1%. Photoionization and photoemission measurements on atoms, molecules, and clusters making use of time-of-flight techniques demonstrate the excellent performance of the beamline. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1145833
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  • 6
    Electronic Resource
    Electronic Resource
    Fitting of x-ray or neutron specular reflectivity of multilayers by Fourier analysis (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 2788-2790 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of x-ray or neutron specular reflectance on the scattering density has been linearized by modifying the Born approximation. This makes it possible to analyze the reflectivity curves by the Fourier transform method by using the box refinement technique. Thus, the phases of the scattered waves are iteratively obtained, by which the scattering density profile in layered systems can be directly evaluated. The validity of these modifications is demonstrated by some numerical examples. The box refinement technique requires fewer constraints to obtain the physically realistic scattering density than the least-squares-fitting method does. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363196
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  • 7
    Electronic Resource
    Electronic Resource
    Thermal stability of (Zn,Cd)(Se,S) heterostructures grown on GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4368-4372 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have analyzed the thermal stability of ZnSe-based single quantum well structures grown on a GaAs substrate by applying a rapid thermal annealing process. The photoluminescence intensity of the quantum well was used as a monitor for the thermal changes induced by the annealing process. X-ray diffractometry yields information about the crystal quality and the strain condition before and after the thermal treatment. As a main result, we found that the thermal stability of the quantum well photoluminescence signal critically depends on the thickness of the II–VI buffer layer, i.e., the distance between the active layer and the GaAs-II–VI heterointerface. For a buffer layer thickness of about 38 nm, the quantum well signal is totally quenched after a 1 min annealing step at 500 °C, while clear luminescence signals can be observed in samples with a 1 μm buffer even for a 750 °C process. Additionally, by comparing CdZnSe/ZnSe and ZnSe/ZnSSe quantum wells, we found that the Cd–Zn interdiffusion seems to be more efficient than the S–Se interdiffusion. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361746
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  • 8
    Electronic Resource
    Electronic Resource
    Band alignment and carrier injection at the porous-silicon–crystalline-silicon interface (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4482-4488 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The current-voltage characteristics and the photoresponse of metal-porous Si–p-type Si heterostructures have been studied. It is shown that the common interpretation of the current-voltage characteristics, which assumes that the current is limited by the Schottky barrier at the metal-porous Si interface, is wrong. An alternative explanation based on the electric-field dependence of the porous Si conductivity is suggested. It is shown that the rectifying behavior originates from a depletion inside the c-Si substrate at its interface to the porous Si. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359443
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  • 9
    Electronic Resource
    Electronic Resource
    Molecular-beam epitaxy of beryllium-chalcogenide-based thin films and quantum-well structures (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 792-796 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A variety of BeMgZnSe–ZnSe- as well as BeTe-based quantum-well structures has been fabri- cated and investigated. BeTe buffer layers improve the growth start on GaAs substrates drasti- cally compared to ZnSe/GaAs. The valence-band offset between BeTe and ZnSe has been determined to be 0.9 eV (type II). Due to the high-lying valence band of BeTe, a BeTe–ZnSe pseudograding can be used for an efficient electrical contact between p-ZnSe and p-GaAs. BeMgZnSe quaternary thin-film structures have reproducibly been grown with high struc- tural quality, and rocking curve widths below 20 arcsec could be reached. Quantum-well structures show a high photoluminescence intensity even at room temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362888
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  • 10
    Electronic Resource
    Electronic Resource
    Coimplantation of silver and halogens in thin SiO2 films (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3915-3920 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silver and halogens, Br and Cl, were coimplanted into thin SiO2 films sandwiched on a field-effect structure. Compositional depth distribution and chemical states of the implants were measured by means of Auger electron spectroscopy and x-ray photoelectron spectroscopy. Ion sensitivity of the surface layer was measured using a capacitive field-effect structure, electrolyte–insulator– semiconductor. Silver halides were found to be incorporated in SiO2 in addition to metallic silver. The distribution of the implanted silver sensitively responds to the reactive halogens subsequently implanted into a silver-containing surface. The solid phase of silver halides with a concentration of less than 10 at. % delivers a distinct ion sensing characteristic toward halide ions in an electrolyte solution, comparable to that of bulk material. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361817
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