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  • Springer  (31)
  • American Chemical Society (ACS)
  • Springer Nature
  • 1995-1999  (32)
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Year
  • 1
    ISSN: 1572-882X
    Keywords: cellulose dissolution ; dissolution mechanism ; morphology ; electron microscopy
    Source: Springer Online Journal Archives 1860-2000
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: Abstract The influence of different solvents on the morphology of cellulose during the dissolution process was studied. Spruce sulfite pulp, cotton linters and hydrolysed cotton linters were treated for a short time with lithium chloride: N,N-dimethylacetamide (LiCl:DMAc) and an alkaline solution of iron sodium tartrate (EWNN), respectively. The changes occurring at the fibre surfaces and within the cell walls were observed by scanning as well as by transmission electron microscopy. The cellulose fibres show significant differences in the dissolution behaviour when comparing the reaction of the two solvents. Using LiCl:DMAc, the cotton linters fibres become lamellar separated and within the spruce sulfite pulp fibres solvent channels appear in the first step with the fibrils becoming separated. In contrast, EWNN has a swelling effect on the surface of the cellulose fibres. Both solvent systems predominantly affect the ends of the fibres and places where the wall structure has been damaged.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Georgian mathematical journal 4 (1997), S. 65-80 
    ISSN: 1572-9176
    Keywords: Morse theory ; closed geodesics ; critical points ; free loop space ; Lusternik–Schnirelmann category
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Notes: Abstract In Morse theory an isolated degenerate critical point can be resolved into a finite number of nondegenerate critical points by perturbing the totally degenerate part of the Morse function inside the domain of a generalized Morse chart. Up to homotopy we can admit pertubations within the whole characteristic manifold. Up to homotopy type a relative CW-complex is attached, which is the product of a big relative CW-complex, representing the degenerate part, and a small cell having the dimension of the Morse index.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    The European physical journal 9 (1999), S. 635-639 
    ISSN: 1434-6036
    Keywords: PACS. 74.20.-z Theories and models of superconducting state - 71.10.Fd Lattice fermion models (Hubbard model, etc.) - 02.70.Lq Monte-Carlo and statistical methods
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: We perform numerical simulations of the Hubbard model using the projector Quantum Monte Carlo method. A novel approach for finite size scaling is discussed. We obtain evidence in favor of d-wave superconductivity in the repulsive Hubbard model. For U=4, is roughly estimated as K.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 61 (1995), S. 277-283 
    ISSN: 1432-0649
    Keywords: 32.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Systematic measurements of the relative ion number stored in a Paul trap within the stability diagram given by the solution of the equation of motion reveal many lines, where only few or no ions can be confined. The observations can be explained by the presence of perturbations from higher-order components in the trapping potential, which is a quadrupole potential in the ideal case. The resonances follow the equation (n r /2)β r + (n r /2)β z = 1,n r +n z =N, where 2N is the order of the perturbation,n r ,n z are integer andβ r ,β z are stability parameters of the trap. The experiments were performed on H+ and H 2 + ions, which are detected after a storage time of 0.3 s by ejection from the trap.
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  • 5
    ISSN: 1432-0630
    Keywords: PACS: 71.70.Di; 72.10.Fk; 71.20.Nr
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Spatially resolved I./V.-images exhibit circular symmetrical corrugations at the surface. These are ascribed to scattered electron waves at dopant atoms below the surface. From the energy dependence of their diameter, the dispersion of the InAs conduction band at the Γ-point is estimated.
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  • 6
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 69 (1999), S. 489-496 
    ISSN: 1432-0630
    Keywords: PACS: 68.55.-a; 68.35.Fx; 68.65.+g; 61.16.Ch
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Ultrathin metal films consisting of two-dimensional clusters are typically unstable: the cluster ensemble has the tendency to reduce its total free energy via Ostwald ripening or dynamic coalescence of mobile clusters. In this paper we give an overview of recent model experiments addressing these coarsening mechanisms. The experiments have been performed using STM on ensembles consisting of adatom or vacancy clusters with typical diameters in the nanometer range on fcc(111)-metal surfaces. Agreement with and deviations from conventional theories are discussed.
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  • 7
    ISSN: 1432-0630
    Keywords: PACS: 61.16.Ch; 68.60.Dv; 82.30.Nr
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. We investigate atomic and molecular nanostructures on metal surfaces by variable low-temperature scanning tunnelling microscopy. In combination with molecular dynamics calculations we achieve a detailed understanding of the stability of these structures.¶Atomic nanostructures in homoepitaxial metallic systems are thermodynamically only metastable. Two-dimensional islands on Ag(110) decay above a threshold temperature of T l=175 K. Caused by the anisotropy of the surface, distinct decay behaviours exist above and below a critical temperature of T c=220 K. Calculations based on effective medium potentials of the underlying rate limiting atomic processes allow us to identify the one-dimensional decay below T c as well as the two-dimensional decay above T c.¶In contrast to atoms, the intermolecular electrostatic interaction of polar molecules leads to thermodynamically stable structures. On the reconstructed Au(111) surface, the pseudo-chiral 1-nitronaphthalin forms two-dimensional supermolecular clusters consisting predominantly of ten molecules. Comparison of images with submolecular resolution to local density calculations elucidates the thermodynamical stability as well as the internal structure of the decamers.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Springer
    Journal of solid state electrochemistry 2 (1998), S. 273-280 
    ISSN: 1433-0768
    Keywords: Key words Silicon ; Germanium ; CVD ; Epitaxy ; Boron
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract The effect of boron incorporation during chemical vapor deposition of SiGe thin films from silane, germane, diborane, and hydrogen gas mixtures is investigated. It is shown that boron incorporation during SiGe thin-film growth degrades the Ge profile under certain growth conditions when the boron concentration is high enough (〉1019 cm−3). In single-wafer atmospheric-pressure processes we find that no Ge concentration depression occurs at deposition temperatures above 675 °C. In multi-wafer atmospheric-pressure processes we find an increasingly occurring depression of the Ge concentration along the wafer stack, even at temperatures above 675 °C. In low-pressure processes, high-level in-situ doping of SiGe with boron is possible at temperatures as low as 550 °C without any degradation of the Ge profile. Thus LPCVD is superior to APCVD with respect to high-level in situ doping of SiGe with boron. The presence or absence of Ge profile degradation in boron-doped SiGe thin films is explained by the discussion of growth rate enhancement phenomena.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 67 (1998), S. 705-710 
    ISSN: 1432-0630
    Keywords: PACS: 34.70.+e; 79.20.Nc; 97.60.Bm
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 61 (1995), S. 455-466 
    ISSN: 1432-0630
    Keywords: PACS68.55.-a; 61.50.Cj; 81.15.-z
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. On the basis of a kinetic growth model we discuss new methods to grow atomically flat homoepitaxial layers in a controlled way. The underlying principle of these methods is to change the growth parameters during growth of an atomic layer in such a way that nucleation on top of a growing layer is suppressed, and thus, layer-by-layer growth is achieved. Experimentally, this can be realized by changing the substrate temperature or deposition rate during monolayer growth in a well-defined way. The same can be achieved at constant temperature and deposition rate by simultaneous ion bombardment during the early stages of growth of a monolayer, or by adding suitable surfactants to the system. Model experiments on Ag(111) and on Cu(111) using thermal energy atom scattering and scanning tunneling microscopy demonstrate the success of these methods.
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