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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 3301-3309 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Using time-of-flight mass spectroscopy, we have investigated melting and ablation of gallium arsenide and silicon irradiated by femtosecond pulses. Below the ablation threshold the maximum surface temperature is obtained from the collisionless time-of-flight distributions of evaporated or sublimated particles. At the melting threshold, we estimate a temperature for the silicon surface which is approximately 500 K higher than the equilibrium melting temperature. In the fluence regime where melting is known to be a nonthermal process, we measure maximum surface temperatures in excess of 2500 K for both silicon and gallium arsenide, indicating rapid thermalization after nonthermal melting. At the ablation threshold, we estimated for both materials surface temperatures between 3000 and 4000 K. We observed a clear threshold-like effect in the number of detected particles, indicating the occurrence of a bulk effect. The flow parameters above the ablation threshold are discussed and compared to the different models of collisional expansion. For Fabl〈F〈2Fabl, transition from the liquid state to the gas phase occurs through the two-phase regime. For F〉2Fabl, we find evidence that expansion takes place at temperatures that are higher than the critical temperature. Plasma formation appears only at fluences above 1 J/cm2 (F〉5Fabl). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 2831-2833 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Successful and unexpected epitaxial growth of Cu/CaF2 bilayers on hydrogen terminated Si(111) wafers by thermal evaporation is reported. The bilayers were characterized with conventional x-ray diffraction experiments, grazing angle incidence x-ray diffraction experiments, rocking curves, and χ scans. The growth mode of Cu films on CaF2 epitaxially grown on Si(111) is completely different from that of the Cu film grown directly on Si(111). © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1445-1448 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Blends of polyaniline doped with camphorsulfonic acid, (PAni–CSA), and poly(methylmethacrylate) (PMMA) are important candidates for hole injection electrode material in organic light emitting devices. We present a quantitative analysis of the potential barrier heights at interfaces between the PAni–CSA/PMMA blend and poly-(p-phenylene vinylene) (PPV). The barrier height determination, which is of crucial importance for radiant efficiency control of organic light emitting diodes, is based on temperature dependent tunneling current measurements. The value of the [PAni–CSA/PMMA]/PPV potential barrier height is found to be independent of the PAni–CSA concentration in the blend, except near the percolation threshold, where an increase in the barrier height value is observed. © 1998 American Institute of Physics.
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  • 4
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Ab initio predictions of the molecular geometry, harmonic vibrational frequencies, and dissociation energies are reported for the germanium hydride cluster ion GeH+7. Seven stationary points were located on the potential energy surface (PES) of GeH+7 using the self-consistent field (SCF), configuration interaction including single and double excitations (CISD), and coupled cluster including single, double, and perturbatively included triple excitations [CCSD(T)] methods in conjunction with a double-ζ plus polarization (DZP) and a triple-ζ plus polarization TZ(3d1f,1p) quality basis set. The most stable structure has a C2 symmetry with the two H2 subunits rotating freely about the symmetry axis of the GeH+3 fragment. Our best estimate of the dissociation energy for GeH+7, taking into account the zero point vibrational energy (ZPVE) is 3.10 kcal/mol compared to 4.6 and 1.2 kcal/mol obtained, respectively, for the SiH+7 and CH+7 cluster ions. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 5565-5569 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Six candidate AlH5 structures were examined in detail using the self-consistent-field (SCF), configuration interaction including single and double excitations (CISD), and coupled cluster including single, double and perturbatively included connected triple excitations [CCSD(T)] methods in conjunction with double-ζ plus polarization (DZP), triple-ζ plus polarization (TZ2P), and augmented TZ2P(f,d) basis sets. The C4v and the D3h isomers are high in energy [72 and 84 kcal mol−1, respectively, relative to the Cs(I) structure at DZP CCSD]. Although structure Cs(I) is the global minimum, the second Cs form, where AlH5 is comprised of nearly planar alane (AlH3) and dihydrogen, is essentially equal in energy. Hence, the rotation of the hydrogen moiety is virtually free. The global Cs(I) minimum was characterized by vibrational frequency analyses at TZ2P CCSD(T). Final energies were obtained at CCSD(T) TZ2P(f,d). At room temperature, the alane–dihydrogen complex AlH5 is unstable toward dissociation by 3.1 kcal mol−1. However, at the absolute zero (0 K), the complex forms exothermically (−1.7 kcal mol−1). Hydrogen scrambling via the C2v (3) transition structure seems to be very unlikely since the activation barrier for this process is at least 24.6 kcal mol−1 higher than the dissociation energy of AlH5 into AlH3 and H2. © 1995 American Institute of Physics.
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