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  • 1995-1999  (211)
  • 1945-1949  (11)
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  • 11
    Electronic Resource
    Electronic Resource
    Laser diode cavity ring-down spectroscopy using acousto-optic modulator stabilization (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 3199-3204 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: By using an acousto-optic modulator, we have stabilized a free-running continuous wave (CW) laser diode in the presence of strong reflections from a high finesse Fabry–Perot resonator. The laser diode linewidth can be stabilized from several MHz, for high resolution spectroscopy of species at low pressures, to several hundred MHz, for lower resolution spectroscopy of species at atmospheric pressures. We demonstrated CW cavity ring-down spectroscopy of water vapor at both 1 atm and 5 Torr. We achieved ring-down repetition rates of 10–50 kHz, and a noise level of 2×10−8 cm−1. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365688
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  • 12
    Electronic Resource
    Electronic Resource
    Strain-balanced Si/SiGe short period superlattices: Disruption of the surface crosshatch (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 845-849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of inserting Si/Si0.6Ge0.4 strain-balanced superlattices (SLs) into Si0.8Ge0.2 (001) virtual substrates. The SiGe SL layer thickness chosen was larger than the critical thickness for elastic relaxation and generated numerous hemicylindrical features oriented along the 〈100〉 directions. These features lead, when covered by Si0.8Ge0.2, to a disruption of the well-ordered surface crosshatch along the 〈110〉 directions, and to a significant lowering of the surface roughness. There is also evidence for some filtering of the threading dislocations by the SL. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370813
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  • 13
    Electronic Resource
    Electronic Resource
    Effects of monolayer coverage, flux ratio, and growth rate on the island density of InAs islands on GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3161-3163 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the effects of monolayer coverage, V/III flux ratio and growth rate on the density of three-dimensional growth induced isolated InAs islands grown on GaAs by molecular-beam epitaxy. Within the isolated island growth regime, increasing the monolayer coverage increases the InAs island density with only a small increase in island size. Decreasing the V/III flux ratio or decreasing the growth rate increases the island density without changing the average in-plane island diameter. We have observed island densities that are 80% of the ideal close-packed island density. We propose a model explaining the island density increase with monolayer coverage; local variations in accumulated strain in the wetting layer vary the point at which local islanding is initiated. As more material is deposited more islands are nucleated and the island density increases. The island density increases with decreasing V/III flux ratio or growth rate by increasing the adatom surface diffusion in the underlying wetting layer, leading to a more uniformly strain wetting layer and a more uniformly roughened growth front. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113709
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  • 14
    Electronic Resource
    Electronic Resource
    Tunable mid-infrared generation by difference frequency mixing of diode laser wavelengths in intersubband InGaAs/AlAs quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 265-267 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate difference frequency generation (DFG) of 8.66–11.34 μm wavelength light in intersubband InGaAs/AlAs quantum wells by mixing of 1.92 μm±25 nm and 2.39 μm±39 nm. The peak DFG second order nonlinear susceptibility χ(2) is measured to be 12±1 nm/V, more than 65 times that of GaAs, at a difference frequency output wavelength of 9.50 μm. The intersubband absorption for the 1–2 and 1–3 transitions is measured to be 9.3 and 2.1 μm, respectively. Second harmonic generation (SHG) of 4.76, 5.12, and 5.36 μm light with a CO2 laser is observed with a peak SHG χ(2) of 52±3 nm/V. Good agreement of experiment with theory is found for both the linear and nonlinear optical properties. This demonstration of mid-infrared DFG opens the possibility for monolithic diode laser pumps and compact waveguide frequency converters as tunable midinfrared sources. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113512
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  • 15
    Electronic Resource
    Electronic Resource
    Substrate temperature and monolayer coverage effects on epitaxial ordering of InAs and InGaAs islands on GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 991-993 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For InAs Stranski–Krastanov (SK) island growth on GaAs by molecular-beam epitaxy, we show that the in-plane island diameter varies exponentially with the growth temperature over the range of 390–540 °C. A transition region in SK growth between isolated island growth and island coalescing is investigated as functions of growth temperature and equivalent InAs layer-by-layer monolayer (ML) coverage in order to extend the isolated island regime for quantum confinement applications. InAs islands of 150 A(ring) in diameter have been grown. Growth of In0.5Ga0.5As islands indicates an increased 2D epitaxial region before island nucleation and a decreased island concentration compared to growth of InAs islands. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113822
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  • 16
    Electronic Resource
    Electronic Resource
    Broadly tunable resonant-cavity light emission (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 590-592 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Wavelength-tunable light emission is demonstrated from a planar microcavity employing a deformable-membrane top mirror. A gold/silicon nitride membrane is suspended by an air gap above a GaAs cavity, containing In0.2Ga0.8As multiple quantum wells, and a GaAs/AlAs distributed Bragg reflector. Micromechanical displacement of the membrane allows for broad and continuous wavelength tuning of the cavity resonance formed by the combination of the semiconductor cavity and the air gap. Optically excited luminescence from the quantum wells is restricted to the resonant cavity modes and exhibits a 31 nm (42 meV) tuning range and 2.2 nm (3 meV) linewidth near 960 nm for 0–15 V applied bias. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115398
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  • 17
    Electronic Resource
    Electronic Resource
    Annealing cycle dependence of preferential arsenic precipitation in AlGaAs/GaAs layers (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 330-332 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The spatial distribution of arsenic precipitates formed in a nonstoichiometric AlGaAs/GaAs quantum well is examined for different annealing temperatures and times. Preferential precipitation in the GaAs layer of samples annealed at 600 °C is found to be much weaker than in samples annealed at 850 °C because of the reduced diffusion of arsenic at lower temperatures. Nevertheless, it is demonstrated that strong preferential precipitation is possible at low annealing temperatures, provided that the annealing time is sufficiently long. Limitations to the preferential precipitation process imposed by interface mixing and the decrease in gallium vacancy concentration during annealing are also examined. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121824
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  • 18
    Electronic Resource
    Electronic Resource
    Wide and continuous wavelength tuning in a vertical-cavity surface-emitting laser using a micromachined deformable-membrane mirror (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 891-893 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Continuous wavelength tuning of 15 nm was achieved micro-electromechanically in an InGaAs/AlGaAs vertical-cavity surface-emitting laser operating near 960 nm. The device utilizes a micromachined deformable-membrane top mirror suspended by an air gap above a p-i-n diode quantum well active region and bottom mirror. Applied membrane-substrate bias produces an electrostatic force which reduces the air gap thickness and therefore tunes the lasing wavelength. Typical tuning bias ranged between 15 and 23 V, and the minimum threshold current was 35 mA for pulsed room-temperature operation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116221
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  • 19
    Electronic Resource
    Electronic Resource
    Room temperature operation of a single electron transistor made by the scanning tunneling microscope nanooxidation process for the TiOx/Ti system (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 34-36 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The single electron transistor (SET) is fabricated using the scanning tunneling microscope (STM) as a fabrication process, and the fabricated SET operates at room temperature. Using the STM tip as a cathode, the surface of the titanium metal can be oxidized, and the few tens of nanometer wide oxidized titanium line can be made. The small island region of the SET of ∼30×∼35 nm2 is formed by the oxidized titanium line. The Coulomb staircase of 150 mV period is observed in the current–voltage characteristics of the SET at room temperature. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116747
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  • 20
    Electronic Resource
    Electronic Resource
    Electroluminescence in vertically aligned quantum dot multilayer light-emitting diodes fabricating by growth-induced islanding (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 1897-1899 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A molecular beam epitaxy (MBE) growth-induced islanding process has been used to form self-organized multiple quantum dot layers, in which quantum dots from different layers are vertically aligned in columns and are electronically coupled. These structures are used as the active region in light-emitting diodes operating at room temperature. Light-emitting diodes are investigated using quantum dot columns containing single, 5 and 10 InAs quantum dots. These diodes emit light over a broad band with typical spectral linewidths of 120 nm, peaked between 1000 and 1100 nm. In addition to the quantum dot spectral feature, a spectral feature from a thin quantum well region, integral to the quantum dot formation process, is seen in the single quantum dot diode, but is eliminated in diodes with active regions containing columns of multiple quantum dots. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117614
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