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  • Articles  (2)
  • Engineering  (1)
  • highly dry atmosphere  (1)
  • 1995-1999  (2)
  • 1950-1954
  • Electrical Engineering, Measurement and Control Technology  (2)
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  • Articles  (2)
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  • 1995-1999  (2)
  • 1950-1954
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Topic
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Journal of applied electrochemistry 29 (1999), S. 843-852 
    ISSN: 1572-8838
    Keywords: ageing ; aluminium ; anodizing ; cold sealing ; highly dry atmosphere ; sealing quality
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Electrical Engineering, Measurement and Control Technology
    Notes: Abstract EIS in the 100 kHz–1 mHz frequency range was applied to the study of changes in cold sealed aluminium oxide films exposed to highly wet and extremely dry atmospheres. Information about these changes was obtained from evolution of the impedance diagrams and, in particular, from film resistance and capacitance values determined from them. Results show that sealing quality, assessed from EIS, increases over months and years as ageing proceeds in a natural atmosphere. The analysis was completed with the aid of XPS and EDX techniques and standard quality control tests. Measurements show that specimens aged very rapidly in wet atmospheres, so that they passed all sealing quality tests within 72h. The sealing quality improves with ageing even in highly dry atmospheres despite the fact that pores lose part of their initial filling water. XPS analysis revealed that fluorine and nickel concentrate in the outer layers of cold sealed anodic films; on the other hand, films obtained by the traditional HTS procedure exhibit a uniform composition throughout their thickness.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 11 (1998), S. 221-229 
    ISSN: 0894-3370
    Keywords: Engineering ; Numerical Methods and Modeling
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: This paper presents a physical-mathematical model for abrupt heterojunction transistors and its solution using numerical methods with application to InP/InGaAs HBTs. The physical model is based on the combination of the drift-diffusion transport model in the bulk with thermionic emission and tunnelling transmission through the emitter-base interface. Fermi-Dirac statistics and bandgap narrowing distribution between the valence and conduction bands are considered in the model. A compact formulation is used that makes it easy to take into account other effects such as the non-parabolic nature of the bands or the presence of various subbands in the conduction process. The simulator has been implemented for distributed memory multicomputers, making use of the MPI message-passing standard library. In order to accelerate the solution process of the linear system, iterative methods with parallel incomplete factorization-based preconditioners have been used. © 1998 John Wiley & Sons, Ltd.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
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