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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 3717-3726 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The chemisorption binding of Co and Fe to cavity walls in Si was quantitatively characterized in the temperature range 973–1273 K in order to evaluate the efficacy of cavities for impurity gettering. The cavities were formed by He ion implantation and annealing. Then, with the solution concentration of Co or Fe being held at the solid solubility through prior formation of excess metal-silicide phase, the equilibrium number of metal atoms bound to the cavities was measured. Using this information in conjunction with published solubilities, a binding free energy relative to interstitial solution was extracted. The binding free energies for cavity-wall chemisorption of Co and Fe were found to be less than those for precipitation of the respective silicide phases, a reversal of the ordering previously observed by us for Cu and Au. Nevertheless, model calculations indicate that the chemisorption mechanism is important together with silicide precipitation for cavity gettering of all four elements. The results of this work, taken with the known thermal stability and the anticipated device-side compatibility of cavities, suggest that these sinks will prove attractive for gettering.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6547-6556 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Precipitation strengthening of nickel was investigated using ion-implantation alloying and nanoindentation testing for particle separations in the nanometer range and volume fractions extending above 10%. Ion implantation of either oxygen alone or oxygen plus aluminum at room temperature was shown to produce substantial strengthening in the ion-treated layer, with yield strengths near 5 GPa in both cases. After annealing to 550 °C the oxygen-alone layer loses much of the benefit, with its yield strength reduced to 1.2 GPa, but the dual ion-implanted layer retains a substantially enhanced yield strength of over 4 GPa. Examination by transmission electron microscopy showed very fine dispersions of 1–5 nm diameter NiO and γ-Al2O3 precipitates in the implanted layers before annealing. The heat treatment at 550 °C induced ripening of the NiO particles to sizes ranging from 7 to 20 nm, whereas the more stable γ-Al2O3 precipitates were little changed. The extreme strengthening we observe is in semiquantitative agreement with predictions based on the application of dispersion-hardening theory to these microstructures. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3060-3062 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effectiveness of copper gettering by implantation-induced cavities in competition with internal gettering sites in silicon was demonstrated. The cavities were formed in the near surface region by He implantation and annealing while the internal gettering sites were created in the material's bulk by a ramped hi–lo–hi oxygen precipitation heat treatment. Ion implantation was used to controllably introduce the copper. The quantity of implanted copper was below that corresponding to saturation of solution throughout the wafer at the gettering temperatures of 700 and 800 °C. The cavities were found to be an effective gettering site in the presence of internal gettering sites with only a small amount of copper being gettered at the internal gettering sites. These results have important implications for optimal gettering of metallic impurities from integrated circuit device regions. © 1996 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1694-1696 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The biaxial moduli of coherently strained Si1−xGex thin films have been determined over the composition range x=0.15–0.6 from independent measurements of film stress and strain. Our results indicate that use of the rule of mixtures to determine the strained-alloy elastic constants from the bulk values for pure Si and Ge is valid, and that higher-order elastic effects are relatively unimportant over this composition range. © 1997 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 3344-3346 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The band gap of AlxGa1−xN is measured for the composition range 0≤x〈0.45; the resulting bowing parameter, b=+0.69 eV, is compared to 20 previous works. A correlation is found between the measured band gaps and the methods used for epitaxial growth of the AlxGa1−xN: directly nucleated or buffered growths of AlxGa1−xN initiated on sapphire at temperatures T〉800 °C usually lead to stronger apparent bowing (b〉+1.3 eV); while growths initiated using low-temperature buffers on sapphire, followed by high-temperature growth, lead to weaker bowing (b〈+1.3 eV). Extant data suggest that the intrinsic band-gap bowing parameter for AlGaN alloys is b=+0.62(±0.45) eV. © 1999 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 2568-2573 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: H and D have been implanted into undoped films of GaN heteroepitaxially grown on sapphire over a dose range from 5×1015 to 5×1017 ions/cm2. After a 600 °C post-implantation anneal, room temperature Fourier-transform-infrared spectroscopy reveals two major local vibrational modes at 3183 cm−1 (2364 cm−1) and 3219 cm−1 (2386 cm−1) for the H (D) material implanted at higher doses. The position and isotope shift (1.35) of these modes strongly suggest they are due to hydrogen bonded to nitrogen atoms; these atoms are located on the surfaces of seven sided cavities created by the H implant and thermal anneal cycle and identified by transmission electron microscopy. Nuclear reaction analyses of isochronally annealed D implanted films indicate that most of the deuterium remains bound within the implanted layer, and that the major release stage for D occurs near 900 °C. By contrast, the N–H (N–D) vibrational modes anneal out in the 750–800 °C temperature range. These findings indicate that the bound H exists in at least two major states, believed to be IR-active N–H on the cavity walls and IR-inactive H2 gas within the cavities. © 1999 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Journal of the American Water Resources Association 34 (1998), S. 0 
    ISSN: 1752-1688
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Architecture, Civil Engineering, Surveying , Geography
    Notes: : A hydrologic modeling study, using the Hydrologic Simulation Program - FORTRAN (HSPF), was conducted in two glaciated watersheds, Purdy Creek and Ariel Creek in northeastern Pennsylvania. Both watersheds have wetlands and poorly drained soils due to low hydraulic conductivity and presence of fragipans. The HSPF model was calibrated in the Purdy Creek watershed and verified in the Ariel Creek watershed for June 1992 to December 1993 period. In Purdy Creek, the total volume of observed stream-flow during the entire simulation period was 13.36 × 106 m3 and the simulated streamflow volume was 13.82 × 106 m3 (5 percent difference). For the verification simulation in Ariel Creek, the difference between the total observed and simulated flow volumes was 17 percent. Simulated peak flow discharges were within two hours of the observed for 30 of 46 peak flow events (discharge greater than 0.1 m3/sec) in Purdy Creek and 27 of 53 events in Ariel Creek. For 22 of the 46 events in Purdy Creek and 24 of 53 in Ariel Creek, the differences between the observed and simulated peak discharge rates were less than 30 percent. These 22 events accounted for 63 percent of total volume of streamflow observed during the selected 46 peak flow events in Purdy Creek. In Ariel Creek, these 24 peak flow events accounted for 62 percent of the total flow observed during all peak flow events. Differences in observed and simulated peak flow rates and volumes (on a percent basis) were greater during the snowmelt runoff events and summer periods than for other times.
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  • 8
    ISSN: 1438-3888
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Summary In the Wadden Sea, in total, 93 species of macrofaunal benthic invertebrates are threatened in at least one subregion. Of these, 72 species are threatened in the entire area and are therefore placed on the trilateral Red List. 7 species are (probably) extinct in the entire Wadden Sea area. The status of 9 species of macrofaunal invertebrates is critical, 13 species are (probably) endangered, the status of 25 species is (probably) vulnerable and of 17 species (probably) susceptible.
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  • 9
    Electronic Resource
    Electronic Resource
    Springer
    Mathematische Zeitschrift 71 (1959), S. 31-35 
    ISSN: 1432-1823
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Springer
    Mathematische Zeitschrift 68 (1957), S. 151-152 
    ISSN: 1432-1823
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mathematics
    Type of Medium: Electronic Resource
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