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  • American Physical Society  (25)
  • American Institute of Physics (AIP)  (11)
  • International Union of Crystallography
  • 1995-1999  (33)
  • 1960-1964  (1)
  • 1940-1944  (2)
  • 1
    Electronic Resource
    Electronic Resource
    Thermal stability of (Zn,Cd)(Se,S) heterostructures grown on GaAs (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 4368-4372 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have analyzed the thermal stability of ZnSe-based single quantum well structures grown on a GaAs substrate by applying a rapid thermal annealing process. The photoluminescence intensity of the quantum well was used as a monitor for the thermal changes induced by the annealing process. X-ray diffractometry yields information about the crystal quality and the strain condition before and after the thermal treatment. As a main result, we found that the thermal stability of the quantum well photoluminescence signal critically depends on the thickness of the II–VI buffer layer, i.e., the distance between the active layer and the GaAs-II–VI heterointerface. For a buffer layer thickness of about 38 nm, the quantum well signal is totally quenched after a 1 min annealing step at 500 °C, while clear luminescence signals can be observed in samples with a 1 μm buffer even for a 750 °C process. Additionally, by comparing CdZnSe/ZnSe and ZnSe/ZnSSe quantum wells, we found that the Cd–Zn interdiffusion seems to be more efficient than the S–Se interdiffusion. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361746
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  • 2
    Electronic Resource
    Electronic Resource
    A three-well quantum well infrared photodetector (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3396-3398 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simplified quantum well infrared photodetector (S-QWIP) has been designed and demonstrated which shows very high performance. The S-QWIP is designed to have only three quantum wells with detection peak wavelengths at 7.3, 8.3, and 10 μm, for the first, second, and third well, respectively. The two barriers between the three wells are graded to block the dark current effectively when reverse bias is applied. It also produces a built-in potential in the structure for a photovoltaic (PV) effect. The two end barriers are designed with different widths so that the electron transport can be compared when the bias directions are changed. The responsivity of the S-QWIP shows three photoreponse peaks at zero bias (PV effect) and migrates to one wide peak when the bias increases. The device is BLIP at 85 K within the operable reverse bias range. The responsivity is greatly enhanced at higher temperature and small bias. The conversion efficiency of photon absorption to photocurrent calculated conservatively at a bias voltage −0.8 V and peak wavelength 8.5 μm is 29%. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117271
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  • 3
    Electronic Resource
    Electronic Resource
    Photoluminescence efficiency study of wet chemically etched CdTe/Cd1−xMgxTe wires (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 1815-1817 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically active semiconductor wires with lateral extensions between 60 nm and 5 μm based on CdTe/Cd1−xMgxTe quantum well structures have been fabricated by electron beam lithography and subsequent pattern transfer using a wet chemical etching process. Changes of the relative photoluminescence efficiency have been studied by photoluminescence spectroscopy as a function of the wire widths. For narrow wires nonradiative recombination at the wire sidewalls becomes the major recombination mechanism, strongly decreasing the photoluminescence efficiency. We discuss the influence of the exciton diffusion on the photoluminescence efficiency by investigating the wire width dependence of the photoluminescence intensity as a function of temperature and quantum well thickness. High photoluminescence efficiencies are obtained in the case of small diffusion lengths as for example at low temperatures and narrow quantum wells. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113331
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  • 4
    Electronic Resource
    Electronic Resource
    First order distributed feedback operation in ZnSe based laser structures (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1-3 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: First order distributed feedback laser with periods down to 94 nm based on ZnSe have been realized by electron beam lithography and wet chemical etching. Distributed feedback operation was demonstrated by optical excitation using a pulsed N2 laser. A threshold density of 80 kW/cm2 was found at room temperature for a resonator length of 225 μm. From the stop band width, a coupling coefficient of 120 cm−1 can be estimated. By varying the grating period the emission wavelength can be tuned over a wide spectral range of more than 130 meV. Measurements in the range between 20 and 300 K show that the shift of the emission wavelength with temperature is reduced by more than a factor of four as compared to the temperature shift of the spontaneous emission. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115478
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  • 5
    Electronic Resource
    Electronic Resource
    Lateral quantization effects in lithographically defined CdZnSe/ZnSe quantum dots and quantum wires (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 124-126 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quantum dots and quantum wires based on CdZnSe/ZnSe single quantum well heterostructures have been achieved using electron beam lithography and wet chemical etching. Photoluminescence spectra of the dot and wire structures show a blue shift due to lateral quantization for lateral dimensions below 40 nm. For the dot ground state, a lateral confinement energy of 16 meV is obtained for 28 nm diameter structures. For wires with widths on the order of 20 nm, lateral confinement energies of about 5 meV are observed. The dot diameter and wire width dependence of the emission energies can be described based on a square well potential and the measured sizes of the structures. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115504
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  • 6
    Electronic Resource
    Electronic Resource
    Fabrication of dry etched CdZnSe/ZnSe quantum wires by thermally assisted electron cyclotron resonance etching (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 344-346 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low damage dry etch technology suitable for in situ processing was developed for the fabrication of ZnSe-based nanostructures. Thermally assisted electron cyclotron resonance etching combines plasma etching at low ion energies with process temperatures between 80°C and 210°C. Due to a variation of the process parameters, i.e., plasma power and sample temperature, a transition from partially physical to prevailing chemical etch properties is obtained. Therefore an accurate control of etch profile, surface morphology, and etch rate is possible. Optically active CdZnSe/ZnSe quantum wires with lateral sizes down to 20 nm were realized, indicating a significantly reduced influence of optically inactive layers compared to conventionally dry etched nanostructures. In narrow wires, a systematic blue shift of the photoluminescence signal with decreasing wire width clearly demonstrates lateral carrier confinement effects. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119533
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  • 7
    Electronic Resource
    Electronic Resource
    Wavelength control in II–VI laser diodes with first order distributed Bragg reflectors (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 1026-1028 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Longitudinal single mode emission from ZnSe-based laser diodes with first order distributed Bragg reflectors has been achieved. The emission energy could be varied in the green spectral range over more than 80 meV by changing the grating period from 97.7 to 102.2 nm. The variation of the lasing threshold current in this range is explained as a consequence of the optical gain spectrum of the structure. Wavelength fine tuning with a rate of Δλ/ΔT=2.9×10−2 nm/K was realized by temperature variation. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119716
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  • 8
    Electronic Resource
    Electronic Resource
    First order gain and index coupled distributed feedback lasers in ZnSe-based structures with finely tunable emission wavelengths (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 599-601 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: First order gain and index coupled distributed feedback (DFB) gratings were realized in ZnSe-based laser structures using direct implantation with a focused ion beam for gain-modulated structures and conventional electron beam lithography for index modulation. With both technologies, gratings with periods below 90 nm could be achieved, permitting DFB emission in the blue spectral range. Fine tuning of the emission wavelength in steps of 0.14 nm is demonstrated by sampled DFB gratings based on a periodic modulation of the resonator period. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116480
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  • 9
    Electronic Resource
    Electronic Resource
    Single zero-dimensional excitons in CdSe/ZnSe nanostructures (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3105-3107 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Zero-dimensional excitons (0DXs) in CdSe/ZnSe nanostructures have been studied by time- and spatially resolved photoluminescence spectroscopy. The three-dimensional confinement is confirmed by an exciton lifetime up to 550 ps, independent of temperature up to 130 K. By preparing mesa structures with diameters down to 50 nm as local probes, an extremely high spatial resolution is achieved, giving experimental access to single 0DXs. A splitting of the ground state into a linearly polarized doublet with an energy spacing up to 1.5 meV is found, varying from dot to dot in sign and magnitude. This indicates a noncircular shape with no preferential orientation of the dots. The dot density is estimated to increase from 5×1010 to 1.5×1011 cm−2, when changing the nominal CdSe layer thickness from 1 to 3 ML, i.e., close to the critical thickness. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122687
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  • 10
    Electronic Resource
    Electronic Resource
    Minority-carrier lifetime and efficiency of Cu(In,Ga)Se2 solar cells (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 1224-1226 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature recombination dynamics has been investigated in a large set of different Cu(In,Ga)Se2 absorber films and compared to the electrical device characteristics of the respective solar cell modules. For a given cell preparation process, a characteristic relation between the low-injection minority-carrier lifetime of the absorber layers and the conversion efficiency of the solar cells is observed: Long lifetimes correlate with high open circuit voltages and conversion efficiencies, while no significant influence of the lifetime on the short circuit current is found. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122134
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