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  • 1
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 110 (1999), S. 12070-12081 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Time-resolved pump–probe spectra of 1,1′,3,3,3′,3′-hexamethyl-4,4′,5,5′-dibenzo-2,2′indotricarbocyanine (HDITC), a cyanine dye, in ethylene glycol are obtained using 11 fs and 90 fs duration pulses and analyzed in order to study its potential energy surfaces and vibrational dynamics. Ten oscillatory frequencies ranging from 30 cm−1 to 1400 cm−1 are observed in the 11 fs duration wavelength-resolved pump–probe measurements. They are assigned as fundamental vibrational frequencies of HDITC. The relative displacements of the equilibrium position between electronic excited and ground states along the resolved ten vibrational modes are determined through the wavelength dependence of the oscillatory amplitude. After considering the contributions of the ten vibrational modes, it is found that most of the Stokes shift and the early fast decays of the pump–probe signals are due to relaxation along the low frequency overdamped modes of the chromophore. The overdamped modes are characterized by the 90 fs pump–probe signals with the excitation at the red edge of the absorption band. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In this article we introduce a novel scanning tunneling microscope (STM), which operates in a sample temperature range from 60 to at least 850 K. The most important new feature of this STM is that, while one selected part of the surface is kept within the microscope's field of view, the sample temperature can be varied over a wide range of several hundreds of degrees during actual imaging. The extremely low drift of the scanner and sample was achieved by the combination of a thermal-drift compensated piezoelectric scanner design with a newly developed sample stage. The design of the sample stage defines a fixed center from which thermal expansions, in all three directions, are forced outwards. The performance of the microscope is demonstrated for several surfaces including Au(110), on which we follow one particular surface region over a temperature range of more than 270 K. © 1998 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 2442-2447 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The behavior of As precipitation in low-temperature grown III–V arsenides is investigated and correlated with the doping level, crystal bond strength, and dislocation density. Experimental results reveal that the doping level affects the concentration of charged defects, such as vacancy and antisite point defects, and hence leads to the selective precipitation of excess As in homojunctions. For heterostructures, As precipitates tend to condense in materials with a lower bond strength due to differences in point defect concentrations between the materials. In addition, dislocations are found to be a vacancy source that facilitates As precipitation around them. These results indicate that column III vacancies play an important role in As precipitation of low-temperature grown III–V arsenides. © 1999 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 2974-2979 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents results from the calculation of the high-energy electron–electron scattering rate in silicon based on a full energy-band structure obtained by the pseudopotential technique. The effects on the scattering rate of the overlap integrals, wave-vector-dependent dielectric function and umklapp processes are described and the transition rate is compared with that obtained using a semiclassical analysis based on a parabolic energy dispersion. A hybrid Monte Carlo/iterative technique for solving the Boltzmann transport equation is used to obtain the electron energy distribution function generated by binary particle interactions in a one-dimensional system. © 1997 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    Journal of the American Chemical Society 96 (1974), S. 4099-4102 
    ISSN: 1520-5126
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 52-54 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated arsenic precipitation in arsenide heterostructures grown at low temperature by molecular beam epitaxy. In these heterostructures, both doping and bond strength are found to affect arsenic precipitation during thermal annealing. For GaAs/Al0.3Ga0.7As multiple quantum wells, where GaAs is Be doped and Al0.3Ga0.7As is Si doped, arsenic precipitates preferentially appear in the GaAs region after annealing. For In0.1Ga0.9As/GaAs/In0.1Al0.9As heterostructures, whether they are doped or not, arsenic precipitates always tend to condense in the In0.1Ga0.9As region, indicating that the bond strength effect dominates the process of arsenic precipitation over the doping effect. © 1999 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 587-589 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Separately grown p-type, intrinsic, and n-type GaAs at low temperatures as well as a combined p-i-n structure have been used to study the formation of As precipitates upon annealing at 800 °C. For the separate structures, least precipitates have been noticed in the n-type material. In contrast, the highest density of precipitates appears in the n region for the p-i-n structure. In addition, an obvious band depleted of precipitates, exists in the intrinsic region near the n-i interface. A general vacancy model, including Fermi level effect and crystal bonding strength (thermodynamic factor), has been developed to explain the current results as well as to predict As precipitation in various low temperature grown III–V heterostructures. © 1998 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1386-1388 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaAsSb is a low band gap, lattice matched to InP, alternative to GaInAs. Growth and doping using diethyltellurium and carbon tetrachloride were investigated. Hole concentrations up to 1.3×1020 cm−3 have been achieved in as-grown carbon-doped GaAsSb [i.e., no postgrowth annealing was necessary for dopant activation, a key requirement for n-p-n heterojunction bipolar transistor (HBT) structures]. This is a sevenfold improvement over the best carbon-doped InGaAs reported by metalorganic chemical vapor deposition. Hall measurements indicate that GaAsSb's hole mobility is 55%–60% of GaInAs's, for a given carrier concentration. InP HBTs with carbon-doped GaAsSb base are demonstrated. © 1996 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3032-3034 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of excess As in low-temperature (LT) grown Be doped, undoped and Si-doped GaAs subjected to BCl3/Ar reactive ion etching has been investigated using transmission electron microscopy and atomic force microscopy. Etching rate and the extent of ion damage are found to depend on the doping type and thermal treatment. For as-grown LT-GaAs, significant decrease in etching rate is observed as the dopant is changed from Be to Si. Thermal treatment by rapid thermal annealing slightly increases the etching rate of GaAs grown at low temperature while it increases the etching rate significantly for the samples grown at normal temperature. In addition, as-grown LT-GaAs also exhibits superior resistance to the ion damage of reactive ion etching. © 1999 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 786 (1996), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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