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  • Point defects  (1)
  • expert system  (1)
  • Springer  (2)
  • 1995-1999  (2)
  • 1975-1979
  • 1
    Electronic Resource
    Electronic Resource
    Development of a rapid prototyping design advice system (1999)
    Springer
    Journal of intelligent manufacturing 10 (1999), S. 331-339 
    Details
    ISSN: 1572-8145
    Keywords: Rapid prototyping ; expert system ; knowledge based system ; decision support ; product development aid
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract This paper describes the initial development of a computer based Rapid Prototyping Design Advice System. The system is intended to assist the designer or project manager, particularly those in small and medium sized companies, in planning the prototyping stage of product development. It provides the user with an efficient and user friendly development aid which uses information obtained from the user and Computer Aided Design data to recommend suitable rapid prototyping solutions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008920512663
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Investigation of point defect clusters in silicon using parallel molecular dynamics (1997)
    Springer
    Journal of computer-aided materials design 4 (1997), S. 29-42 
    Details
    ISSN: 1573-4900
    Keywords: Parallel molecular dynamics ; Point defects ; Silicon ; Aggregation
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract A parallel molecular dynamics algorithm is presented for computingconfigurations of relatively large defects in crystalline silicon, as modelledby the Stillinger–Weber (SW) three-body interatomic potential. Thealgorithm is based on a partitioning of physical space among the N processorswith atoms migrating freely between the partitions. Implementation on aneight-processor IBM SP2 computer shows the increased efficiency withsimulation size expected because of the increased computational load perprocessor relative to communication overhead. The parallel efficiency reached70% for 21 952 atoms. Calculations are presented for the thermodynamics offormation of interstitial and vacancy clusters containing up to seven pointdefects. The clusters were relaxed within a host lattice of about 3000 siliconatoms subjected to periodic boundary conditions. Free energies of formationfor temperatures 500 K ≤ T ≤ 1600 K were computed using thermodynamicintegration. Computed equilibrium distributions for these clusters show ashift to the larger species at lower temperatures, as expected. The SWpotential predicts greater driving forces for interstitial aggregation thanvacancy aggregation across the entire temperature range. Model calculationsfor a large vacancy cluster are also presented to demonstrate the utility ofthe algorithm for exploring very large defects in silicon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1008661719368
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