ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Magnetoresistance in low-temperature grown molecular-beam epitaxial GaAs (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 6243-6248 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Conductivity, Hall effect as well as "physical" and "geometrical" magnetoresistances were measured at 290–440 K in molecular-beam epitaxial GaAs layers grown at 200–400 °C. The experimental data were analyzed taking into account the combined band and hopping conductance regime. Positive hopping magnetoresistance parameters (Δρ/ρ0B2)h(approximate)10−4 T−2 and hopping Hall mobilities lower than 1×10−4 m2 V−1 s−1 were determined in the as-grown layers. A transverse-to-longitudinal hopping magnetoresistance ratio of about 2, consistent with hopping transport theories, was obtained. In the annealed layer grown at 200 °C (J200a) the band mobility determined from the geometrical magnetoresitance (GMR) mobility was found to be significantly higher than the band Hall mobility. It is related to a mixed band conductivity regime with the hole concentration p exceeding the electron one n. The difference between GMR and Hall mobilities decreases with increasing growth temperature as far as a typical single-carrier band conductivity regime (n〉p) is present in the layer grown at 400 °C. In contradiction to the layers grown at higher temperatures, the J200a layer showed the opposite (positive) sign of the hopping Hall coefficient as well as the largest hopping magnetoresistance parameter ((approximate)3×10−2 T−2). © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371679
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Hall mobility analysis in low-temperature-grown molecular-beam epitaxial GaAs (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 2563-2565 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependent conductivity and Hall effect measurements were carried out on molecular-beam epitaxial GaAs layers grown at 200–420 °C and separated from the substrate. An analysis of experimental data with and without considering the hopping Hall mobility was made. An extremely low room temperature Hall mobility of 0.14 cm2 V−1 s−1 was measured in the 250 °C layer, which could be interpreted as the hopping Hall mobility. The room temperature band Hall mobility (μHb) increases from 500 to 6000 cm2 V−1 s−1 and the power (n) of the temperature dependence of μHb (∼T−n) increases from 0.5 to 1.2 with increasing growth temperature from 300 to 420 °C. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117740
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Semi-insulating GaAs layers grown by molecular-beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 983-985 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Temperature dependent conductivity and Hall-effect measurements were carried out on molecular-beam epitaxial GaAs layers grown at 420 °C and separated from the substrate. The layers exhibit semi-insulating properties with a room temperature resistivity of (6–7)×106 Ω cm. The electron Hall mobility is proportional to temperature as ∼T−1.1 and the room temperature value is 5900 cm2 V−1 s−1. From the (nHT−3/2) vs T−1 plot, a donor activation energy of 0.68 eV, different than in bulk semi-insulating GaAs, has been evaluated. A similar activation energy is observed in as-grown and annealed GaAs layers grown at 200–350 °C. This indicates that the high resistivity of GaAs grown at low temperatures might be explained by deep donor defects rather than As precipitates. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114966
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Resistivity anisotropy in ordered InxGa1−xP grown at 640 °C (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 369-371 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The anisotropy of electrical properties in ordered InxGa1−xP epitaxial layers was studied. These samples were prepared by a low-pressure metalorganic chemical vapor phase epitaxy technique at the growth temperature of 640 °C. Resistivity measurements using a four-point-probe method have shown that samples with a low misfit value (0–1.5×10−3) are electrically uniform. For samples with higher misfit the anisotropy of resistivity markedly increases up to a maximum of 950. Comparing the results obtained from x-ray diffraction, low temperature photoluminescence, and atomic force microscopy experiments, we have shown that lattice mismatch can support the evolution and extension of the ordering effect in the InxGa1−xP layers. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121837
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    The Benzofurans of Isocoma wrightii. Structure and Stereochemistry (1979)
    s.l. : American Chemical Society
    Journal of natural products 42 (1979), S. 203-219 
    Details
    ISSN: 1520-6025
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/np50002a012
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    ANALYSIS OF THE RATE OF DEGRADATION OF DIETHYL DICARBONATE BY GAS CHROMATOGRAPHY (1975)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 40 (1975), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.1975.tb01028.x
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Anwendbarkeit der Dreikonstanten-Redlich-Kister-Gleichung zur Korrelation der stark nichtidealen Systeme (1977)
    Springer
    Colloid & polymer science 255 (1977), S. 198-198 
    Details
    ISSN: 1435-1536
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01777309
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Biophysics of thermal injury (1977)
    Springer
    Bulletin of experimental biology and medicine 84 (1977), S. 1596-1599 
    Details
    ISSN: 1573-8221
    Keywords: skin ; temperature regulation ; thermal injury
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology , Medicine
    Notes: Abstract Experiments on rats showed that thermal radiation causes a much sharper increase in the subcutaneous temperature in an area of skin separated from the underlying tissues by a layer of felt than in an area of skin separated from surrounding and underlying tissues and immediately resutured in situ, or an area of intact skin. In the authors' opinion the results indicate that the blood flow does not play an essential role in the removal of heat from the skin following its exposure to radiant heat. The ability of the underlying tissues to conduct and accumulate heat is much more important.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00801689
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Die Kinetik der Polyadditionsreaktionen des 1-Chlor-2,3-epoxypropan. (1976)
    Springer
    Colloid & polymer science 254 (1976), S. 944-944 
    Details
    ISSN: 1435-1536
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01775545
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Simulated mesoscopic structures of a domain wall in a ferroelastic lattice (1998)
    Springer
    The European physical journal 4 (1998), S. 279-284 
    Details
    ISSN: 1434-6036
    Keywords: PACS. 62.90.+k Other topics in mechanical and acoustical properties of condensed matter - 62.20.-x Mechanical properties of solids - 77.80.Dj Domain structure; hysteresis
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract: A precise description of the twin domain wall in a ferroelastic lattice is presented. The bulk structure of the wall is described by the Landau-Ginzburg model, with and without the fourth order spatial derivative of the order parameter. The domain wall at the surface is seen as a rounded ridge, with the characteristic thickness of the ridge being the same as the thickness of the wall in the bulk. The elastic response of the surface close to the wall is rather exotic. We predict that the AFMTM images should show a narrow groove in the middle of the ridge with two hill-like features on either side of the groove. Consequences for the chemical activity of the surface for the sites close to the wall are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s100510050380
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...