Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
74 (1999), S. 2669-2671
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We succeeded with an in situ observation of the epitaxial microcrystal produced in thermally grown oxide on Si(100) by applying the grazing incidence diffraction of a synchrotron x ray. Oxidation was at 900 °C for 8 h in an environment of oxygen diluted with nitrogen, producing thermal oxides that were 122 Å thick. During oxidation, we observed the diffraction peak corresponding to the epitaxial microcrystal, even in 23-Å-thick oxide. The peak intensity increased as the oxidation proceeded but decreased by about 2/3 after cooling at the end of the oxidation. The lattice constant of the c axis of the microcrystal changed from 10.4 Å for 23-Å-thick oxide to 11.7 Å for oxides thicker than 45 Å. © 1999 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.123953
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