ISSN:
1432-0630
Keywords:
72.20 HJ
;
73.60 F
;
85.30
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Carrier heating is shown to be responsible for unusualI(V) characteristics observed in small-sizep + nn + silicon on sapphire (SOS) devices. The classical quadratic law of the “semiconductor” regime becomes linear for high fields. The influence of dimensions and doping is experimentally checked and a model, based on the regional approximation method, is proposed. The key role is assumed by the hot-carrier region, growing from the cathode, where the electron and hole mobilities are field dependent: µ~E−γ. A full agreement with the experiment in SOS is found forγ=0.5. The operating of hot carrierp + nn + devices can be described concretely with usual formalism by using the concept of “effective” carrier mobilities, which depend on the applied voltage.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00632433
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