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  • Articles  (8)
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  • Springer  (8)
  • 1995-1999  (6)
  • 1980-1984  (1)
  • 1960-1964  (1)
  • 1930-1934
  • Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics  (5)
  • Geosciences  (3)
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  • Articles  (8)
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  • 1
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    Heavy metals in freshly deposited sediments of the Gomati River (a tributary of the Ganga River): effects of human activities (1997)
    Springer
    Details
    Publication Date: 1997-02-27
    Print ISSN: 0943-0105
    Electronic ISSN: 1432-0495
    Topics: Geosciences
    Published by Springer
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    PAPER CURRENT
  • 2
    Electronic Resource
    Electronic Resource
    Attenuation operators and complex wave velocities for scattering in random media (1996)
    Springer
    Pure and applied geophysics 148 (1996), S. 269-285 
    Details
    ISSN: 1420-9136
    Keywords: Wave scattering ; attenuation ; random media ; reflectivity method
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences , Physics
    Notes: Abstract The concept of attenuation operators and complex velocities is applied to scattering attenuation in two and three dimensions, using the minimum-phase assumption for the attenuation operator. Acoustic 2D finite-difference computations of synthetic seismograms show, that the attenuation operator describes well the decay and lowpass filtering of the averaged wave form, which follows from averaging travel-time-corrected wave forms along the wave front. In the case of exponential random media, analytical forms of the attenuation operators and complex velocities are available. The complex velocities are incorporated into the reflectivity method. As an application, synthetic seismograms are presented for theS n wave, attenuated by lithospheric velocity and density fluctuations. The limitations of attenuation operators and complex velocities for scattering are also discussed. With these quantities it is not possible to model phenomena related to the scattered waves themselves, such as amplitude and travel-time fluctuations along the wave front, codas and precursors.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882063
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  • 3
    Electronic Resource
    Electronic Resource
    The electrical performance of thinn +-window layers ina-Si: H solar cells (1982)
    Springer
    Applied physics 29 (1982), S. 63-68 
    Details
    ISSN: 1432-0630
    Keywords: 72.40 ; 73 ; 85 ; 60
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The electrical properties ofn +-window layers inp-i-n a-Si:H solar cells were characterised as a function ofn +-layer thickness, $$d_{n^ + } $$ , by measuring firstly the activation energyE a of the dark conductivity and secondly the built-in potentialV bi of the cells.E a was found to increase with decreasing $$d_{n^ + } $$ attaining values as high as 0.8 eV for $$d_{n^ + } $$ ≅5nm; bulk values, e.g.E a ≅. 2eV in the amorphous andE a〈0.01 eV in the microcrystalline case, were only observed for $$d_{n^ + } $$ 〉20nm and for $$d_{n^ + } $$ 〉200nm, respectively. In contrast,V bi did not depend on $$d_{n^ + } $$ at all and was further found to be consistent with expectations based on the Fermi level positions in bulkn + andp +-material. As a consequenceE a in very thin films can no longer be considered as a measure of (E C −E F), the distance of the Fermi level from the conduction band edge. The apparent inconsistency inherent to theE a and theV bi results can be resolved by assuming that the deposition of then +-material proceeds via the growth and coalescence of small islands.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00632427
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  • 4
    Electronic Resource
    Electronic Resource
    Optical absorption and electronic transport in ion-implantation-doped polycrystalline SiC films (1995)
    Springer
    Applied physics 61 (1995), S. 193-201 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.80 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Fine-grained (d≈0.1 μm), polycrytalline SiC films were prepared on top of insulating and optically transparent sapphire substrates by means of a thermal crystallization technique. Optical absorption measurements indicate that the individual SiC grains consist of relatively defect-free β-SiC surrounded by high-defect density grain-boundary material. Nominally undoped material exhibits a low de conductivity (δ≈10−8 Ω−1 cm−1) in the dark and an efficient photoconductivity apon illumination with short-wavelength UV light. The temperature dependence of the de transport exhibits a quasi-Arrhenius-type behaviour with average activation energies of the order to 0.6 eV. A characteristic feature of this kind of transport is a continuous increase in activation energy with increasing film temperature. Upon doping with N, P and Al ions, the average activation energy is decreased and room temperature conductivities of the order of 0.1 Ω−1 cm−1 are reached. Doping with B ions, on the other hand, only leads to high-resistivity material. It is shown that the electronic transport in doped SiC-On-Sapphire (SiCOS) films can be successfully modelled in terms of a grain-boundary-dominated conduction process. In this process thermal activation across potential barriers at the grain-boundary surfaces competes with funneling through these same barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538389
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  • 5
    Electronic Resource
    Electronic Resource
    Optical absorption and electronic transport in ion-implantation-doped polycrystalline SiC films (1995)
    Springer
    Applied physics 61 (1995), S. 193-201 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 72.20; 72.80; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract  Fine-grained (d≈0.1 μm), polycrystalline SiC films were prepared on top of insulating and optically transparent sapphire substrates by means of a thermal crystallization technique. Optical absorption measurements indicate that the individual SiC grains consist of relatively defect-free β-SiC surrounded by high-defect density grain-boundary material. Nominally undoped material exhibits a low dc conductivity (σ≈10-8Ω-1 cm-1) in the dark and an efficient photoconductivity upon illumination with short-wavelength UV light. The temperature dependence of the dc transport exhibits a quasi-Arrhenius-type behaviour with average activation energies of the order to 0.6 eV. A characteristic feature of this kind of transport is a continuous increase in activation energy with increasing film temperature. Upon doping with N, P and Al ions, the average activation energy is decreased and room temperature conductivities of the order of 0.1 Ω-1 cm-1 are reached. Doping with B ions, on the other hand, only leads to high-resistivity material. It is shown that the electronic transport in doped SiC-On-Sapphire (SiCOS) films can be successfully modelled in terms of a grain-boundary-dominated conduction process. In this process thermal activation across potential barriers at the grain-boundary surfaces competes with tunneling through these same barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050190
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  • 6
    Electronic Resource
    Electronic Resource
    Heavy metals in freshly deposited sediments of the Gomati River (a tributary of the Ganga River): effects of human activities (1997)
    Springer
    Environmental geology 29 (1997), S. 246-252 
    Details
    ISSN: 1432-0495
    Keywords: Key words Heavy metals ; Sediment India
    Source: Springer Online Journal Archives 1860-2000
    Topics: Geosciences
    Notes: Abstract  The concentrations of various metals (Cr, Cu, Co, Fe, Mn, Ni, Pb, Zn, and Cd) were determined in recently deposited surface sediments of the Gomati River in the Lucknow urban area. Markedly elevated concentrations (milligrams per kilogram) of some of the metals, Cd (0.26–3.62), Cu (33–147), Ni (45–86), Pb (25–77), and Zn (90–389) were observed. Profiles of these metals across the Lucknow urban stretch show a progressive downstream increase due to additions from 4 major drainage networks discharging the urban effluents into the river. The degree of metal contamination is compared with the local background and global standards. The geoaccumulation index order for the river sediments is Cd〉Zn〉Cu〉Cr〉Pb. Significant correlations were observed between Cr and Zn, Cr and Cu, Cu and Zn and total sediment carbon with Cr and Zn. This study reveals that the urbanization process is associated with higher concentrations of heavy metals such as Cd, Cu, Cr, Pb, and Zn in the Gomati River sediments. To keep the river clean for the future, it is strongly recommended that urban effluents should not be overlooked before their discharge into the river.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002540050123
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  • 7
    Electronic Resource
    Electronic Resource
    Critical solubility in binary alloys (1961)
    Springer
    Metal science and heat treatment 3 (1961), S. 338-338 
    Details
    ISSN: 1573-8973
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00810395
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  • 8
    Electronic Resource
    Electronic Resource
    Increasing the Fracture Toughness of Alumina Based Ceramics by Oxidation-Induced Surface Stresses (1998)
    Springer
    Journal of materials science 17 (1998), S. 921-923 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1023/A:1026452320413
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