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  • 1995-1999  (123)
  • 1985-1989  (77)
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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 430-432 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the saturation of optical absorption in GaSb at wavelengths close to the band gap, and have determined the nonlinear absorption (α2) and refraction (n2) coefficients. At liquid-helium temperature a sharp free-exciton absorption line is observed which saturates with increasing incident laser intensity; we obtain values ||α2||=70 cm W−1 and ||n2||≈0.2 cm2 kW−1. At room temperature we do not observe a well-defined exciton; saturation of the residual interband absorption occurs at much higher intensity, and it is found to be obscured by strong thermal effects.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 590-592 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the diffusion and trapping of photoexcited hot carriers in an InGaAs/InP heterostructure using an optical time-of-fight technique with picosecond time resolution. The ambipolar diffusivity is found to decrease by an order of magnitude between 4 K and room temperature, and the efficiency of trapping of carriers into the well increases rapidly in the same temperature range. A mean trapping time of 4 ps is measured for a 50 A(ring) well.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 493-495 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the observation of electric field induced exciton energy shifts and photoluminescence quenching in GaInAs/InP multiple quantum wells. We have measured both the photocurrent and photoluminescence spectra from 100 A(ring) wells contained with p+- and n+-InP layers in a conventional p-i-n structure; reverse bias voltages of up to 12 V were applied. The exciton peaks in the photocurrent spectrum are seen to broaden and shift to lower energy; the photoluminescence peak, which is due to n=1 excitonic and free-carrier recombination, also shifts to lower energy and is completely quenched at high voltages. These results are similar to those reported previously for GaAs quantum wells and ascribed to the quantum-confined Stark effect.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Astronomy and Astrophysics 33 (1995), S. 239-282 
    ISSN: 0066-4146
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Physics
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 2825-2834 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A multichannel far-infrared interferometer used on the Joint European Torus (JET) is described. The light source is a 195-μm DCN laser. The instrument is of the Mach–Zehnder type, with a heterodyne detection system. The modulation frequency (100 kHz) is produced by diffraction from a rotating grating. There are six vertical and two oblique channels. The latter rely on retroreflection from mirrors mounted on the vessel wall. Their vibration is compensated by a second wavelength interferometer at 118.8 μm. The various subsystems are described, with emphasis on features necessitated by (a) large path lengths, (b) remote handling requirements, (c) fluctuations in atmospheric humidity, and (d) unmanned automatic operation. Typical measurements, along with real-time and off-line data analysis, are presented. The phase-shift measurement is made with an accuracy of (1)/(20) of a fringe, corresponding to a line-integrated electron density of 5×1017 m−2. Comparison with other electron density diagnostics are shown. The introduction of additional optics allows measurements of the Faraday effect and a determination of the poloidal magnetic field distribution. The signal processing and data analysis are described. Errors introduced by the calibration procedure, birefringence of the probing beams, toroidal field pickup, the flux geometry, and the density profile are considered. The Faraday angle is measured with an accuracy of 5% and a time resolution of 1–10 ms. The poloidal magnetic field is deduced with an accuracy of ±15%.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3188-3190 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a combined experimental and theoretical investigation of intra- and intersubband carrier relaxation in GaAs/AlAs quantum wells following femtosecond laser excitation at low density. Time-resolved optical absorption has been measured using 125 fs pulses from a tunable Ti:sapphire laser which allows carriers to be excited preferentially into different subbands. The experiments have been analyzed using a multi-subband Monte Carlo simulation which contains all the important scattering mechanisms. Electron-phonon scattering rates obtained from dielectric continuum theory have been used, and we find excellent agreement with the experiment. The dominance of interface phonons in intrasubband relaxation is confirmed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2851-2853 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a joint theoretical and experimental investigation of GaAs v-groove quantum wires confined in GaAs/AlAs superlattice barriers. We have computed the electronic states for both the quantum wire and the barriers. The intrinsic bending of the superlattice layers, together with systematic spatial variations of their thickness, create localized states in the barriers that are separated from the wire. This effect has a strong impact on the overall luminescence efficiency of the wires. The results are in excellent agreement with photoluminescence and photoluminescence excitation spectra. © 1995 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 3039-3041 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured hot carrier relaxation in GaAs V-groove quantum wires using time-resolved photoluminescence. Relaxation between confined one-dimensional subbands is clearly observed on the time scale of several hundred picoseconds. A simulation of the experiment using a hybrid multisubband Monte Carlo method which includes hot phonon and degeneracy effects gives good agreement with the measurements. © 1995 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1519-1521 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman spectroscopy has been used to measure phonons in GaAs v-groove quantum wire structures containing (001) and (111) GaAs/AlAs superlattice barrier regions. Resonance enhancement permits the identification of modes in different regions of the structure, and the measured phonon frequencies provide structural information which shows clear evidence of GaAs migration during growth from (001) surfaces into the grooves. Confined and interface phonons with large in-(111) plane wavevectors are observed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 199-201 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present optical gain and loss spectra measured over a range of carrier densities at low temperature in hexagonal GaN epilayers. We have determined the optical loss directly to be ∼80 cm−1. Photoluminescence spectra show that stimulated emission in our samples arises from electron–hole plasma recombination. © 1998 American Institute of Physics.
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