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  • American Institute of Physics (AIP)  (18)
  • American Geophysical Union (AGU)
  • 1995-1999  (15)
  • 1985-1989  (3)
  • 1
    Electronic Resource
    Electronic Resource
    Theoretical studies on the femtosecond real-time measurement of ultrafast electronic decay in polyatomic molecules (1989)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 90 (1989), S. 7184-7194 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present a computer simulation of the real-time detection of ultrafast electronic decay dynamics in polyatomic molecules with femtosecond laser pulses. The intramolecular non-Born-Oppenheimer quantum dynamics is treated numerically exactly for a two-state three-mode vibronic coupling model representing the conically intersecting S1 and S2 excited states of pyrazine. The pump–probe signal is evaluated in lowest order perturbation theory with respect to the radiation–matter interaction by numerical integration over the pump and probe pulses. We discuss in some detail the dependence of the pump–probe signal on the properties of the laser pulses (frequencies and pulse durations). The calculations predict a dramatic (∼12 000 cm−1) and ultrafast (∼20 fs) red shift of the stimulated-emission signal as well as distinctive quantum beats in the pump–probe signal as a function of the delay time. Both effects are very pronounced and should therefore be relatively easily detectable experimentally. They are expected to be generic features of ultrafast internal-conversion processes in polyatomic molecules.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.456248
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  • 2
    Electronic Resource
    Electronic Resource
    TaSi2-Si composites as wide-bandpass optical elements for synchrotron radiation : The 9th National conference on synchrotron radiation instrumentation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3355-3355 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The wide matrix rocking curves of the in situ eutectic composite TaSi2-Si make it attractive as a wide-bandpass monochromator for synchrotron radiation. Wafers with Si[111], Si[110], or Si[100] orientation were studied to determine the origin of the wide rocking curves. The high degree of preferred orientation of the TaSi2 rods relative to the Si matrix was examined using synchrotron Laue patterns and the TaSi2 [100], TaSi2 [003], and TaSi2 [102] reflections. Double and triple axis diffractometry were used to show that the large widths were due to strain and mosaic and not long-range bending; copper radiation (for some double axis results) and 120 and 160 keV synchrotron radiation were used. At 8 keV, rocking curve widths were about twenty times broader than those from perfect Si, and peak reflectivities approached 20%. Rocking curves from Si[333] and Si[444] (120 and 160 keV, respectively) had identical profiles and reflectivities of about 25%. The triple axis results show compressive strains in the Si matrix along Si[111] (i.e., parallel to the rods) and dilational strains orthogonal to the rods. These results confirm the promise of TaSi2-Si as a wide-bandpass optical element for synchrotron radiation. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147373
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  • 3
    Electronic Resource
    Electronic Resource
    High density polarized hydrogen gas target for storage rings (1995)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 28-31 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A target of gaseous polarized hydrogen was formed by injecting polarized hydrogen atoms (produced by Stern–Gerlach spin separation) into a storage cell consisting of a cylindrical tube open at both ends. The target was placed in a storage ring to study the target characteristics (nuclear polarization, target thickness, radiation resistance). A weak transverse guide field (5 G) was applied to define the polarization direction. When atoms in a single hyperfine state were selected, the nuclear polarization of the target was measured to be 0.80±0.02. The areal density of the target under these conditions was (5.5±0.2)×1013 H/cm2, while for two spin states (applicable to experiments in high energy rings where a strong magnetic field can be applied to the target) the target thickness was found to be (8.2±0.3)×1013 H/cm2. The target polarization was unaffected by prolonged exposure of the target to beams up to 1 mA. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1146388
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  • 4
    Electronic Resource
    Electronic Resource
    Characterization of the helical undulator HELIOS I in the 520 to 930 eV range using a multilayer polarimeter (1997)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 1939-1944 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A W/Si multilayer was used to determine the degree of circular polarization of the soft x-ray radiation of the European Synchrotron Radiation Facility helical undulator HELIOS I. The multilayer, manufactured by vapor deposition serves as a wideband tunable polarization analyzer in the photon energy range from 520 to 930 eV. The characterization of the multilayer's analyzing power, varying from 0.82 to 0.25 for these energies, indicates that it operates close to its calculated specifications. The lack of phase-shifters applicable in this energy range was overcome by a detailed analysis of the unpolarized background identified as radiation from the magnetic lattice. In this way, the degree of circular polarization of HELIOS I was determined to exceed 0.85 for hν〉685 eV. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1148081
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  • 5
    Electronic Resource
    Electronic Resource
    Toward the development of high resolution synchrotron x-ray diffraction tomography of polycrystalline materials : The 9th National conference on synchrotron radiation instrumentation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 67 (1996), S. 3358-3358 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: In understanding the macroscopic response of polycrystalline structural materials to loading, it is frequently essential to know both the three-dimensional distribution of strain and of microtexture. The methods must be nondestructive, however, if the evolution of quantities, such as strain at a fatigue crack tip, are to be studied. This paper describes approaches for high resolution synchrotron x-ray diffraction tomography of polycrystalline materials. Preliminary experiments are reported on partially cracked compact tension samples of Al-Li 2090 and on model samples of randomly packed, millimeter-sized single crystals. Polychromatic beams collimated to diameters as small as 30 μm have been used, and collecting the spatial distribution of diffracted intensity on image storage plates as a function of sample-to-detector separation allowed inference of the depth of the volume elements contributing to diffraction. The precision to which one can determine the depths of volume elements will be discussed as well approaches for three-dimensional, nondestructive strain mapping. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1147381
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  • 6
    Electronic Resource
    Electronic Resource
    Characterization of TaSi2–Si composites for use as wide-bandpass optical elements for synchrotron radiation (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6803-6810 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The wide rocking curves of matrix reflections of the in situ eutectic composite TaSi2–Si make wafers of this material attractive for use as wide-bandpass monochromators for synchrotron radiation, and characterization of wafers of TaSi2–Si for use with energies normally accessible at storage rings (i.e., 5–40 keV) is the focus of the present report. A wafer with [111]Si orientation and a wafer with [110]Si orientation are studied. The high degree of preferred orientation of the TaSi2 rods relative to the Si matrix is examined using synchrotron Laue patterns, and the 100TaSi2, 003TaSi2, 101TaSi2, and 102TaSi2 reflections are used to establish the orientation relationship and to determine that the spread of rod orientations is at least 5° and probably no greater than 6°. Double-axis diffractometry with Cu Kα radiation reveals matrix reflections with rocking curve widths that are about 20 times broader than those from perfect Si and with peak reflectivities approaching 20%. The rocking curves widths are found to be relatively insensitive to irradiated area, thus indicating that most of the observed width is not due to long-range bending. Triple-axis diffractometry with Cu Kα radiation reveals that considerable compressive strain exists in the matrix and that much of the width of the diffraction peak is due to mosaicity. The performance of the [111]Si TaSi2–Si wafer and a perfect [111] Si wafer as monochromators for microradiography are compared, and a gain of an order of magnitude in x-ray intensity delivered to the sample is demonstrated with the composite crystal. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361501
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  • 7
    Electronic Resource
    Electronic Resource
    Effect of oxygen precipitation on phosphorus diffusion in Czochralski silicon (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 34-36 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of oxygen precipitation and surface films (SiO2 vs Si3N4) on P diffusion at 1100 °C in Czochralski silicon have been studied. With a fast precipitation rate, P diffusion under both kinds of films is enhanced because of the supersaturation of Si interstitials caused by oxygen precipitation. The larger enhancement in P diffusion under Si3N4 than that under SiO2 covered with Si3N4 is attributed to the slower recombination velocity of interstitials at the Si3N4/Si interface. P diffusion in a denuded zone behaves like that in float-zone Si until the interstitials generated under that zone arrive at the interface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100114
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  • 8
    Electronic Resource
    Electronic Resource
    Computation of electrical conditions inside wire-duct electrostatic precipitators using a combined finite-element, finite-difference technique (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 1799-1806 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An accurate and efficient numerical scheme is presented for calculating electrical conditions inside wire-duct electrostatic precipitators. A Galerkin finite-element method with quadratic interpolation is employed in solving Poisson's equation to yield the electric potential solution. A backward difference method is utilized to compute the space-charge density from the continuity equation. The two methods are iteratively applied until convergence criteria for electric potential and current density are met. Computed potential and electric field values show good agreement with analytic solutions and experimental measurements. Comparisons between the present scheme and a finite-difference scheme show that the finite-element method offers distinct advantages in predicting the electrical characteristics of precipitators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336402
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  • 9
    Electronic Resource
    Electronic Resource
    Optical properties of GaN epitaxial films grown by low-pressure chemical vapor epitaxy using a new nitrogen source: Hydrazoic acid (HN3) (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2433-2435 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report results of our growth and characterization of GaN films using low-pressure chemical vapor epitaxy with a new nitrogen source, hydrazoic acid (HN3). This growth technique allows for low-temperature deposition, low III/V ratios, and increased deposition rates (up to ∼2–3 μm/h). The deposited films show Ga:N atomic ratios of 1±0.25 based on our x-ray photoelectron spectroscopy analyses, and the He(II) UPS (ultraviolet photoelectron spectroscopy) spectra compare favorably with the semi-ab initio calculations for the GaN valence bands and with the reported UPS data for single crystal GaN films. X-ray and Raman spectra show deposited films crystallized in the expected wurtzite structure. We find these epitaxial films to be efficient light emitters in the blue or yellow region of the spectrum, depending upon growth conditions. Our photoluminescence time-decay kinetics confirm the excitonic nature of the blue emission. Lastly, far infrared time-domain spectroscopy shows the low carrier concentration of this material. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113964
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  • 10
    Electronic Resource
    Electronic Resource
    Resonance Raman spectroscopy of the S1 and S2 states of pyrazine: Experiment and first principles calculation of spectra (1995)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 103 (1995), S. 6851-6860 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: New experimental and theoretical data on the resonance Raman (RR) spectroscopy of the S1 and S2 states of pyrazine are presented. Based on recent ab initio CASSCF (complete- active-space-self-consistent-field) and MRCI (multireference configuration interaction) calculations of Woywod et al. [J. Chem. Phys. 100, 1400 (1994)], we construct a vibronic coupling model of the conically intersecting S1 and S2 states of pyrazine, which includes the seven most relevant vibrational degrees of freedom of the molecule. Employing a time-dependent approach that treats the intramolecular couplings in a nonperturbative manner, we calculate RR cross sections for this model, taking explicitly into account the nonseparability of all vibrational modes. The combination of high-level ab initio calculations and multimode propagation techniques makes it possible, for the first time, to make first-principles predictions of RR spectra for vibronically coupled electronic states of an aromatic molecule. The theoretical data are compared to experimental gas-phase RR spectra which have been obtained for five different excitation wavelengths. The comparison reveals that the ab initio predictions match the experimental results in almost every detail. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.470689
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