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  • American Institute of Physics (AIP)  (17)
  • American Chemical Society  (8)
  • Wiley-Blackwell  (4)
  • 1995-1999  (12)
  • 1985-1989  (17)
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Year
  • 1
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 89 (1985), S. 2725-2727 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    s.l. : American Chemical Society
    The @journal of physical chemistry 〈Washington, DC〉 90 (1986), S. 2231-2236 
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology , Physics
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 123-128 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ionic conductivity σ and mobility μ in the amorphous network polymers from poly(propylene oxide) (PPO) containing lithium perchlorate (LiClO4) at the concentration of [LiClO4]/[PO unit]=0.042 and 0.076 were investigated by means of complex impedance and time-of-flight methods. The σ values of the PPO–LiClO4 complexes reached 10−5 S cm−1 at 70 °C. The temperature dependence of σ deviated from a single Arrhenius behavior above a critical temperature (−1 °C and 11 °C) which approximately corresponded to the glass transition temperature Tg. The μ values were relatively high and changed from 10−6 to 10−5 cm2 V−1 s−1 in the temperature range of 40–100 °C. The Nernst–Einstein equation correlated μ with the ionic diffusion coefficient D. The Williams–Landel–Ferry equation with C1(approximately-equal-to)5 and C2(approximately-equal-to)30–50 held with a temperature dependence of D in the order of 10−8–10−7 cm2 s−1. The change in the number of ionic carriers n with temperature obeyed the Arrhenius equation with the activation energy of 0.26 and 0.34 eV. The degree of dissociation for LiClO4 in the PPO networks was 1–6%, and the dissociation was facilitated in the low LiClO4 concentration complex. The temperature dependence of σ above Tg was interpreted quantitatively in terms of n and μ.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 865-872 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adhesion between thin Te-based alloy films and fluorocarbon polymer sublayers, prepared by sputtering or plasma polymerization, was investigated by observing the 1 μm-sized ablative hole opening process with a focused laser beam. Interpretations of the mechanisms for the change in energy required for the hole opening and pit geometry were based on the framework of studies of the ablative hole opening process for optical recording. Observations suggest that the molten material flow during the hole opening includes a ductile fracture and a viscous flow of the molten sublayer material as well as of active layer material. Adhesion acts as an energy barrier against the above mentioned flow of molten material during the hole opening process. Since the fluorocarbon films used in the present work had highly cross-linked structures, the adhesion was mainly dominated by the dynamic force of adhesion. Therefore, the hole opening process was mainly affected by the dynamic force of adhesion rather than the static force, which is dominated by the surface energy of the sublayer. There was a good correlation between the dynamic force of adhesion estimated by the peel-off strength and the concentrations of the -CF- and -C-CF- structures estimated from C1s spectra obtained by x-ray photoelectron spectroscopy. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 5
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Hf-added FeRuGaSi alloy film has an amorphous structure in the as-deposited state and becomes nanocrystalline after annealing. Due to this structure change from crystalline to amorphous by the addition of Hf, soft magnetic degradation of the film deposited on the slant grooved substrate, which is necessary for the sophisticated embedded thin film (ETF) head structure, is greatly suppressed and the undesirable film stress is relieved. The FeRuGaSi-Hf alloy film has higher resistivity and permeability at high frequencies than those of sendust film, and the read/write characteristics of this alloy film show better performance than sendust film. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 1711-1716 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A radiation pyrometer in conjunction with a two-stage light gas gun has been used to measure shock temperatures of soda-lime glass in the pressure range 54–109 GPa. This pyrometer consists of two parts, i.e., an optical multichannel analyzer which measures the radiation spectrum over the visible range (∼450 nm window) and a four-channel photomultiplier tube system which records the time-varying behavior of shock temperatures. The measured radiation spectra are compared with the Planck function to estimate the shock temperatures and emissivities. Obtained spectra are well fit by the Planck function with moderate emissivities, indicating that relatively homogeneous thermal radiation is the main component of radiation. Obtained shock temperatures range from 2800 (100) to 5700 (300) K and they seem to represent shock temperatures of liquefied soda-lime glass (melt). The Hugoniot is well described by a linear relation, us=0.14(21)+1.92(5)up km/s. It is deduced that the radiation from liquids under shock compression, in contrast to the radiation from solids under shock compression, is more thermal and fits the Planck function well, even at lower temperatures. This is because the radiation spectrum of solids under compression often shows nonthermal radiation due to heterogeneous deformation, while the radiation spectrum of liquids under compression could not have such a nonthermal component. © 1998 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4631-4641 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic properties of iron atoms implanted into a sapphire crystal at a dose from 4×1016 to 1×1017 Fe/cm2 were investigated using conversion electron Mössbauer spectroscopy at low temperature. It was confirmed that the components in the Mössbauer spectra which have been assigned to the Fe4+ state so far by other researchers are caused by fine particles of metallic iron, and about 75% of the implanted iron atoms stabilize in the form of fine particles of α iron at high implantation dose. Growth of the fine particles was simulated with a computer, and the expected Mössbauer spectra were calculated considering the influence of the nearest neighbors and next-nearest neighbors on the magnetic hyperfine field of the iron atoms. The simulated spectra agrees well with the experimentally observed spectra on the whole. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 185-186 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of ion implantation on recrystallization of films has been investigated using AlNx (x〈1) films as targets. The 750 A(ring) AlNx (x〈1) films were deposited on Si(111), glassy carbon, and commercial glass by an activated reactive evaporation method in a nitrogen atmosphere. The 80 keV N+ implantations were carried out near room temperature with doses ranging from 5×1016 to 5×1017 N+ions/cm2 at 1×10−6 Torr. The x-ray diffraction patterns revealed that N implantation enhances a (002) orientation of AlN, growth of which depends on doses. The optical transmittance of the AlNx films is also improved by N implantation, depending on doses. N implantation into AlNx (x〈1) even without any annealing is effective for recrystallization of the films, which leads to improvement of optical properties.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 61 (1987), S. 4157-4162 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High performance thin-film heads for disk drive systems have been developed based on a dry process. Heads were computer simulated and optimal design was carried out. Relationships among Ni-Fe composition, domain structure and wiggle of the read-write waveform were obtained. Based on these results, optimum Ni-Fe composition range was determined. A planarization procedure for an inbedding insulator of the conductor coil was developed. Also narrow track patterning and gap depth controlling procedures were developed. Using these procedures, a two-layered seventeen-turn thin-film head for a large capacity disk drive system (23 Mb/in.2) has been developed. The head exhibited excellent read-write characteristics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4898-4902 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A GaInP(N)/GaAs( p) heterojunction bipolar transistor was fabricated by metalorganic chemical vapor deposition (MOCVD) for the first time. The common-emitter current gain exceeded 200 at a current density around 10 A/cm2 and the offset voltage was as small as 50 mV. Thermionic emission theory indicates that the conduction-band discontinuity (ΔEc) at GaInP/GaAs heterointerface is as small as 30 meV at room temperature and this value was more than 160 meV smaller than 0.19–0.22 eV obtained by the C-V profile method. The band-gap energy for MOCVD-grown GaInP was 60 meV smaller than the intrinsic band-gap energy (1.91 eV), but this value is too small to explain the difference between the present ΔEc value and the previously reported ΔEc value.
    Type of Medium: Electronic Resource
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