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  • Blackwell Publishing Ltd  (38)
  • American Institute of Physics (AIP)  (32)
  • 1995-1999  (40)
  • 1985-1989  (30)
  • 1925-1929
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2529-2534 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal-oxide-semiconductor capacitors fabricated by dry and wet oxidation at 1150 °C of n-type 6H–SiC exhibit a drastic negative charging during Fowler–Nordheim charge injection. This charging strongly depends on the fabrication conditions of the samples. The densities of interface states and oxide charges can be significantly reduced by a postoxidation anneal in Ar for as long as 60 min. A large part of the charge appears to be trapped at the interface. These charges are released from the traps by illumination at photon energies between 2 and 4 eV or by annealing below 300 °C. During charge injection interface states are created near the conduction band edge. Their density is strongly reduced by annealing at 150 °C. For the oxide charging we find capture cross sections in the range of 10−15–10−17 cm−2. In unannealed wet oxidized samples the traps exhibit properties similar to those of water-related traps in SiO2 on Si. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 797 (1996), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 89 (1988), S. 3337-3341 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The dissociative chemisorption of N2 on W(100) is found to fall rapidly with increasing kinetic energy Ei in the range 26 to 450 meV. For a surface temperature Ts of 300 K, the initial dissociative chemisorption probability S0 falls from ∼0.8 at Ei=26 meV to 0.15 at 450 meV. Over this range of energies the dissociation probability is also found to fall rapidly with Ts, and to be relatively insensitive to surface coverage at low Ts, strongly suggesting that dissociation occurs in this system via a precursor under these conditions. This picture is supported by angular distribution measurements of the scattered molecules which are consistent with an appreciable cosine component, which also becomes smaller as Ei increases. Results are found to be surprisingly insensitive to the incidence angle over the range 0° to 70°, indicating that the trapping process scales quite closely with the total incidence energy.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 28 (1987), S. 497-508 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: It is shown that Thomae's identity between two 3F2 hypergeometric series of unit argument together with the trivial invariance under separate permutations of numerator and denominator parameters implies that the symmetric group S5 is an invariance group of this series. A similar result is proved for the terminating Saalschützian 4F3 series, where S6 is shown to be the invariance group of this series (or S5 if one parameter is eliminated by using the Saalschütz condition). Here Bailey's identity is realized as a permutation of appropriately defined parameters. Finally, the set of three-term relations between 3F2 series of unit argument discovered by Thomae [J. Thomae, J. Reine Angew. Math. 87, 26 (1879)] and systematized by Whipple [F. J. Whipple, Proc. London Math. Soc. 23, 104 (1925)] is shown to be transformed into itself under the action of the group S6×Λ, where Λ is a two-element group. The 12 left cosets of S6×Λ with respect to the invariance group S5 are the structural elements underlying the three-term relations. The symbol manipulator macsyma was used to obtain preliminary results.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 28 (1987), S. 2812-2823 
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: All weight-2 zeros of the Wigner 3j coefficients may be obtained from the quadratic Diophantine equation known as Pell's equation. These zeros may then be classified by the orbits of a discrete, infinite-order subgroup of the Lorentz group SO(1,1). This is carried out by transforming the "polynomial part'' of a weight-2 3j coefficient to Pellian form and obtaining the fundamental zeros numerically. The relation of this polynomial to a family of binary quadratic forms is also given, together with a discussion of the invariance group.
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  • 6
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: At Brookhaven National Laboratory, an Electron Beam Ion Source (EBIS) is operational and has produced charge states such as N7+, Ar16+, and Xe26+ using neutral gas injection. Ions such as Na7+ and Tl41+ have been produced using external ion injection. The BNL EBIS effort is directed at reaching intensities of interest to RHIC, approximately 3×109 particles/pulse which will require EBIS electron beams on the order of 10 A. Pulsed electron beams up to 1.14 A have been produced using a 3 mm LaB6 cathode. Ion yields corresponding to 50% of the maximum trap capacity for electron beams up to 0.5 A have been obtained. The goal for the TestEBIS is to produce a uranium ion charge state distribution peaked at U45+ with 50% of the trap capacity for a 1 A electron beam.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Soil use and management 12 (1996), S. 0 
    ISSN: 1475-2743
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Geosciences , Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition
    Notes: Abstract. Simulated estimates of crop yield were made for rainfed rice in a 50 ha dryland rice area. The aim was to investigate how soil units and management units of different sizes with different yields could be used to obtain values for areas of land. Two procedures were applied. First, yields were simulated at six sites, that were representative of six soil mapping units. Second, yields were simulated using soil information from 133 auger sites, and were interpolated over management units using block kriging. Differences between the two procedures for the total area and for a test set of 22 additionally sampled locations were small. A 60% increase in precision was achieved when relatively large management units were defined.A Geographical Information System was used to identify areas with greatest yield potential for rainfed dryland rice. Statistical analysis showed that the six soil units could be grouped into three yield classes. The largest yields were obtained for a sub-area comprising 11% of the survey area which was associated with a slowly permeable Bg horizon in the soil profile.It was concluded that the best procedure for the spatial interpolation of simulated rice yield should be based on preliminary simulation of crop yields. A sensitivity analysis of the impact of weather variability and soil heterogeneity on the variation of yield was useful to detect the importance of their contributions. The procedures developed in this study are of value in obtaining a reliable estimate of average yield, and can consequently be used for associated cost-benefit calculations.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Review of income and wealth 42 (1996), S. 0 
    ISSN: 1475-4991
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Economics
    Notes: Household economies translate goods into well-being through production, co-operation, and distribution. Between market goods to households and well-being to persons, value is added. Income is a measure of goods, consumption well-being is measured by equivalent income. An absolute interpretation of equivalent income is argued as the value to persons of consumption well-being after household economies. Guidance is suggested on the choice of equivalence scales, and for the measurement of well-being and inequality.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 637-646 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the incorporation of heavily supersaturated C into Si using solid-phase epitaxy (SPE) of implanted amorphous layers. The strain in the Si1−xCx/Si heterostructures was measured using rocking curve x-ray diffraction. The microstructure and defect introduction were examined using ion channeling and transmission electron microscopy (TEM). The fraction of C located on substitutional lattice sites in the Si was monitored using Fourier transform infrared absorption spectroscopy and ion channeling at resonance energies. Carbon-depth profiles were monitored by secondary ion mass spectroscopy. The metastable solubility limit for the incorporation of C into Si by SPE was found to be 3.0–7.0×1020 atoms/cm3, which is over three orders of magnitude above the equilibrium solubility at the Si melting point. This limit was determined by the ability to regrow without the introduction of microtwins and stacking faults along {111} planes. We postulate the local bond deformation resulting from the atomic size difference between C and Si leads to the faceting of the amorphous–crystalline interface and allows defect introduction, thus limiting the C supersaturations achieved in Si by SPE. It was also found that the defect density in the regrown alloys could be reduced by higher SPE regrowth temperatures in rapid thermal anneal processing. © 1996 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4011-4014 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied photoreflectance (PR) and reflectance spectra of undoped molecular-beam-epitaxy GaAs films on semi-insulating GaAs substrates at low temperature. In the PR spectra a sharp structure near the band-gap energy was observed which is sensitive to pump and probe light intensity. The origin of this structure was investigated by combining time-resolved and depth-resolved measurements. It is shown that the sharp PR structure arises from the superposition of a fast and a slow component of the modulated spectra. The slow PR signal originates from the epilayer–substrate interface. Both components are attributed to the modulation of exitonic transitions centered at slightly different energies. © 1995 American Institute of Physics.
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