ALBERT

Description: ZnSe single crystals of high quality and low impurity levels are desired for use as substrates in optoelectronic devices. This is especially true when the device requires the formation of homoepitaxial layers. While ZnSe is commercially available, it is at present extremely expensive due to the difficulty of growing single crystal boules with low impurity content and the resultant low yields. Many researchers have found it necessary to heat treat the crystals in liquid Zn in order to remove the impurities, lower the resistivity and activate the photoluminescence at room temperature. The physical vapor transport method (PVT) has been successfully used at MSFC to grow many single crystals of II-VI semiconducting materials including ZnSe. The main goal at NASA has been to try to establish the effect of gravity on the growth parameters. To this effect, crystals have been grown vertically upwards or horizontally. Both (111) and (110) oriented ZnSe crystals have been obtained via unseeded PVT growth. Preliminary characterization of the horizontally grown crystals has revealed that Cu is a major impurity and that the low temperature photoluminescence spectra is dominated by the copper peak. The ratio of the copper peak to the free exciton peak is being used to determine variations in composition throughout the crystal. It was the intent of this project to map the copper composition of various crystals via photoluminescence first, then measure their electrical resistivity and capacitance as a function of frequency before proceeding with a heat treatment designed to remove the copper impurities. However, equipment difficulties with the photoluminescence set up, having to establish a procedure for measuring the electrical properties of the as-grown crystals and time limitations made us re-evaluate the project goals. Vertically grown samples designated as ZnSe-25 were chosen to be measured electrically since they were not expected to show as much variation in their composition through their cross-section as the horizontally grown samples.

Description: Differential CCD photometric observations of 3C66A and OJ287 were carried out on 16 and 35 nights between December 1995 and March 1996, at the Vainu Bappu Observatory, India, as part of the blazar monitoring program. During this period we detected major optical outbursts (brightness of 3C66A and OJ287 increased by 0.8 and 1 mag, respectively) of these two blazars on timescales of two months. Integrating the outburst profiles we find that both the blazars released around 10(exp 53) erg. Such large amount of energy may come from the release of binding energy of a compact star when tidally disrupted by a super-massive black hole at the center of these blazars. Also we extend this model to explain the observed multifrequency (radio through gamma-ray) outburst of these two blazars and show that this model will be able to explain the outburst phenomena of other blazars. These new results will be presented with a detailed discussion of the suggested model.

Description: Concept for preassembling high-temperature insulating tiles speeds and simplifies installation and repair and reduces damage from handling. Preassembly concept facilitates placement of tiles on gently contoured surfaces as well as on flat ones. Tiles bonded to nylon mesh with room-temperature-vulcanizing silicon rubber. Spacing between tiles is 0.03 in. Applications include boilers, kilns, and furnaces.

Description: The dielectric properties of ZnSe samples grown by physical vapor transport were measured as a function of frequency. Differences can be seen in the dielectric properties of samples grown under different conditions. The spectra of heat treated samples were also acquired and were found to exhibit significant deviations from those of the as grown crystals.