ISSN:
1432-0630
Keywords:
78.50.−w
;
71.55.−i
;
78.65.−s
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Modulated PhotoReflectance (MPR) measurements on semiconductor wafers implanted with boron or silicon ions in the dose range 5×1010–5×1015 ions/cm2 are presented. Correspondingly, a one-dimensional theoretical multilayer model is established. In the theory, as the implant dose is lower than a critical value, the variation of the MPR signal is contributed mainly by the implanted defects and damages. However, when the dose is above the critical dose, the change of the MPR signal is chiefly due to the formation and growth of an amorphous layer. The theoretical results are in good agreement with those of experiments.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00332434
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