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  • 1995-1999  (66)
  • 1990-1994  (75)
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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 3681-3685 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present the first systematic studies of infrared absorption from interconduction subband transitions for AlAs/Ga1−xAlxAs X-valley superlattices grown in the [001], [115], [113], [112], [111], and [110] directions. In the AlAs quantum well material, electrons occupy X valleys with ellipsoidal constant energy surfaces. Due to the effective mass anisotropy of electrons in the ellipsoidal valleys, these structures can absorb normally incident radiation when the superlattice growth direction is not collinear with the principal axes of at least one of the ellipsoids (i.e., not grown along the 〈001(approximately-greater-than) directions). For both parallel and normal incidence radiation at wavelengths of 12–20 μm, peak absorption coefficients of 3000–6000 cm−1 were obtained for the [113] and [112] superlattices with well widths in the range of 30–50 A(ring) and sheet doping concentrations of 1012 cm−2. Their ability to detect normally incident light and to obtain absorption comparable to that in the GaAs/Ga1−xAlxAs superlattice detectors makes these novel structures promising for use as normal incidence infrared photodetectors.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 3152-3156 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The infrared absorption from intersubband transitions between the lowest two superlattice conduction minibands is investigated for n-type Ga1−xAlxSb/AlSb superlattices. In such an indirect semiconductor superlattice, intersubband transitions can be induced by normally incident light because of the effective-mass anisotropy and the tilted orientation of conduction-band valleys with respect to the growth direction. The absorption coefficients and peak transition wavelengths are calculated for superlattices grown in the [001], [110], and [111] directions for both normal and parallel incidence. In the [110] Ga1−xAlxSb/AlSb superlattice, peak absorption coefficients of 5000–7000 cm−1 are obtained for both normally and parallel incident radiation in the wavelength range of 8–14 μm with moderate sheet doping concentrations of 1012 cm−2. The ability to detect normally incident radiation and to achieve absorption comparable to that in the GaAs/Ga1−xAlxAs detectors makes the Ga1−xAlxSb/AlSb devices promising for future applications in long-wavelength infrared detection.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2844-2847 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Absorption of infrared radiation at normal incidence from intervalence-subband transitions is investigated in p-type GaSb/Ga1−xAlxSb quantum wells. Normal incidence absorption is allowed in conventional p-type quantum wells due to the favorable properties of the p-like valence-band Bloch states and the heavy- and light-hole mixing. By using GaSb as the quantum-well material, which has the smallest heavy-hole effective mass of the commonly used III-V semiconductors, absorption can be further enhanced. We find that normal incidence absorption of 3000–6000 cm−1 can be easily achieved in these proposed quantum wells with well widths of 55–90 A(ring) for the wavelength range of 8–12 μm and typical sheet doping concentrations of 1012 cm−2. This absorption strength is comparable to that in the intrinsic Hg1−xCdxTe detector. Strong absorption of normally incident radiation makes this structure a good candidate for infrared photodetection.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 104-113 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new low-energy electron diffraction (LEED) system has been constructed with a pulse counting position sensitive detector using channel plates and a wedge and strip anode. The detector accepts diffracted electrons over a 120° angle and the LEED pattern is recorded as a 256×256 pixel image. Individual LEED spot intensities can be measured up to a maximum linear count rate of ∼5 kHz while the dark count rate is ∼0.02 Hz, yielding a dynamic range greater than 105. Incident beam currents for LEED measurements are ∼1 pA. Diffuse LEED intensities from disordered systems can be measured using the large dynamic range of this instrument. Examples of diffuse LEED measurements are presented. The low incident beam currents also allow for LEED intensity-voltage measurements on surfaces sensitive to electron beam damage and on nonconducting surfaces.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 1928-1931 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tensile strength of fused silica fibers is believed to approach its intrinsic value at low temperature, and modern experiments indicate very small, perhaps unmeasured, intrinsic dispersion in this strength. The application of classical "weakest link" models to this problem in an attempt to determine the number and therefore the nature of the failure sites is considered. If the skewness as well as the dispersion (Weibull modulus) of failure strengths are measured it may be possible to determine both the number of sites and the distribution of their strengths. Extant data are not sufficient, but calculated skewnesses for comparison with future data are presented. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 609-611 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate a novel infrared (IR) detector structure based on the type II p-doped InAs/GaSb multiquantum well system. Due to the coupling of the first conduction subband in InAs to the valence band states in GaSb, the normal incidence absorption coefficient for intervalence subband transitions between heavy and light hole subbands in GaSb quantum wells is significantly enhanced. An absorption coefficient as large as 6500 cm−1 has been achieved in the wavelength range of 8–17 μm. This is the strongest absorption ever observed among all the IR materials in this wavelength range.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3601-3603 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated infrared absorption properties at normal incidence in p-type Ga1−xInxAs/Al1−yInyAs strained quantum wells. They are designed such that the ground state for holes is a light-hole state, which results from the effects of biaxial tensile strain in the quantum wells. We find that in this light- and heavy-hole inverted structure the infrared absorption from intervalence subband transitions can be greatly enhanced up to 8500 cm−1, which is comparable to that in the intrinsic Hg1−xCdxTe detector. This novel structure's ability to detect infrared radiation at normal incidence makes it promising for infrared photodetection applications.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2694-2696 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated theoretically the dependence of normal incidence absorption from interconduction subband transitions on the growth direction in ellipsoidal-valley quantum wells. Due to the effective-mass anisotropy of electrons in the ellipsoidal valleys, normal incidence absorption is allowed in these structures when the growth direction is not collinear with the principal axes of the ellipsoidal valley which is associated with the ground state. We found that in the AlAs X-valley system the absorption is near optimal for such low-index orientated structures as [210] and [113] quantum wells, while in the Ga0.7Al0.3Sb L-valley system the absorption reaches a maximum for the [110] growth direction.
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  • 9
    Electronic Resource
    Electronic Resource
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 586 (1990), S. 0 
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Physics of Fluids 9 (1997), S. 1387-1399 
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The flow near a surface piercing, symmetric body with a long draft is examined. The experiments are performed in a towing tank at 0.05≤FrL≤0.51, primarily focusing on FrL=0.25, and include velocity measurements using PIV as well as video and film photography above and below the free surface. The bow wave is mild (no bubble entrainment) for Froude numbers below 0.35; however, bow wave breaking and vorticity entrainment at the toe of the wave occur. Energy dissipation in the bow wave is significant and affects the flow behind it. At FrL≥0.15, impingement of the flow on the model near x/L=0.41 generates a turbulent, bubbly wake. On the mid-body just behind this impingement is the origin of a second wave, containing several regions of counter-rotating vorticity which entrain bubbles from the free surface. The wave crest becomes milder and eventually irrotational with increasing distance from the model. At x/L=0.64, boundary layer separation begins at the intersection of the model and the free surface. The separated region grows, but never extends far from the free surface. The separation process originates from secondary flows associated with impingement and breaking at the root of the mid-body wave. At FrL=0.25, there is no reverse flow within the separated region, but at FrL〉0.30, flow reversal does occur. © 1997 American Institute of Physics.
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