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  • 1995-1999  (110)
  • 1990-1994  (62)
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  • 1
    Electronic Resource
    Electronic Resource
    Velocity shear-driven instabilities in a rotating plasma layer (1998)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 5 (1998), S. 4377-4383 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The linear stability of a radially localized layer rotating about the cylindrical axis in a magnetized plasma is investigated using an eigenvalue analysis. The eigenvalue equation is solved numerically in a parameter regime characteristic of the Space Physics Simulation Chamber (SPSC) experiments [Amatucci et al., Phys. Rev. Lett. 77, 1978 (1996)] at the Naval Research Laboratory (NRL). Four types of instabilities are predicted. They are type-A and type-B Kelvin-Helmholtz instabilities, a transverse current-driven instability, and the inhomogeneous energy density driven instability (IEDDI). A quantitative comparison between theory and experiment indicates that an experimentally observed fluctuation in a rotating plasma layer is an IEDDI. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873175
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  • 2
    Electronic Resource
    Electronic Resource
    Method for fast sine-wave calibration of hot-wire frequency response (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1131-1135 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Direct measurement of the transfer function of hot-wire anemometers is needed whenever any turbulence frequencies approach the hot-wire frequency response. In particular, in high-speed applications it is not possible to obtain hot-wire frequency response sufficient to capture all of the turbulent kinetic energy. With knowledge of the hot-wire response, either an estimate of the turbulent integral scale or an approximation of the high-frequency part of the turbulent spectrum may be sufficient to correct measurements by post-detection frequency compensation. Described in this article are simple electronic circuits and a technique for obtaining sine-wave test frequency response of a hot-wire anemometer in a very short time without prohibitively high sampling rates.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141437
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  • 3
    Electronic Resource
    Electronic Resource
    Wave and Joule heating in a rotating plasma (1999)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 6 (1999), S. 619-622 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laboratory experiments were conducted to investigate ion energization by the wave and Joule heating mechanisms in plasma with a radial electric field and an axial magnetic field subjected to increasing ion–neutral collision frequency. Wave and Joule heating regimes were isolated and a transition between the two regimes was observed as the ion–neutral collision frequency was varied. The data show that the dissipation of energy occurs via the mechanism operating on the shortest time scale. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.873207
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  • 4
    Electronic Resource
    Electronic Resource
    Electron wave-packet response of above-all-band-edges semiconductor quantum resonant structures (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5415-5422 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The time-dependent behavior of above-all-band-edges resonant propagating structures is presented. The results obtained are compared to those for the extensively studied double-barrier resonant tunneling structure for reference. It was found that for structures with the same resonant energies and resonance widths, the time-dependent characteristics are very similar. The structures were compared using two analytic approaches. The first is based on linear systems theory and the second on a finite-differences approach. It was found that for both structures, the quasibound state builds up at a rate determined by the parameters of the incident packet and decays with a time constant which corresponds to the lifetime.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355697
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  • 5
    Electronic Resource
    Electronic Resource
    Observation of room temperature surface-emitting stimulated emission from GaN:Ge by optical pumping (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 6544-6546 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Optically pumped surface-emitting stimulated emission at room temperature was observed from GaN:Ge grown by metalorganic chemical vapor deposition. The sample was optically pumped perpendicularly on the top surface while the stimulated emission was collected from the back colinearly with the pump beam. The cavity was formed by the GaN/air and GaN/sapphire interfaces without any other structure. The stimulated emission was gain guided by the pump beam. The threshold optical pump density for stimulated emission was approximately 2.8 MW/cm2 and the linewidth was 2.5 nm. The emission from GaN:Ge showed a redshift as the pump density increased. The comparison between theoretical calculations and experimental results suggested that many-body interactions can account well for the redshift. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363674
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  • 6
    Electronic Resource
    Electronic Resource
    Double frame UV/x-ray Picoframe framing camera systems (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 717-723 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The performance of subnanosecond-resolution, Picoframe I and II electron-optical framing cameras are described for the conditions of UV and soft x-ray illumination. Experimental data are presented to show that an x-ray sensitive Picoframe I camera can produce doublet frames having exposure times of ∼250 ps FWHM, interframe times of ∼1.5 ns with a limiting dynamic spatial resolution of 5 lp/mm. The dual-aperture, Picoframe II camera variant was evaluated with UV and x-ray illumination and frame periods of ∼120 ps FWHM and interframe times of 400 ps were obtained in both cases. The limiting dynamic spatial resolution was 8 l;p/mm for the UV-sensitive Picoframe II camera but this was somewhat lower at 4.5 lp/mm for the x-ray sensitive counterpart.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141483
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  • 7
    Electronic Resource
    Electronic Resource
    High power diode-pumped Nd:YAG regenerative amplifier for picosecond pulses (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1992-1994 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate regenerative amplification of 25-ps full width at half-maximum TEM00 pulses to (approximately-greater-than)1 mJ at a 2-kHz repetition rate in a diode-pumped Nd:YAG system. The single pulse energy gain is 74 dB and operation at 5 kHz has delivered (approximately-greater-than)3.5 W of average power at λ=1.064 μm. Gain narrowing and self-phase modulation cause significant spectral and temporal broadening, from 70 GHz and 12 ps to ∼100 GHz and 25 ps, respectively, for the shortest amplified pulses. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112840
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  • 8
    Electronic Resource
    Electronic Resource
    Kinetics of photoconductivity in n-type GaN photodetector (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3792-3794 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality ultraviolet photoconductive detectors have been fabricated using GaN layers grown by low-pressure metalorganic chemical vapor deposition on (11⋅0) sapphire substrates. The spectral responsivity remained nearly constant for wavelengths from 200 to 365 nm and dropped sharply by almost three orders of magnitude for wavelengths longer than 365 nm. The kinetics of the photoconductivity have been studied by the measurements of the frequency-dependent photoresponse and photoconductivity decay. Strongly sublinear response and excitation-dependent response time have been observed even at relatively low excitation levels. This can be attributed to redistribution of the charge carriers with increased excitation level. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115385
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  • 9
    Electronic Resource
    Electronic Resource
    Growth of AlxGa1−xN:Ge on sapphire and silicon substrates (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1745-1747 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: AlxGa1−xN were grown on (00.1) sapphire and (111) silicon substrates in the whole composition range (0≤x≤1). The high optical quality of the epilayers was assessed by room-temperature optical absorption and photoluminescence measurements. Layers with higher Al composition are more resistive. Resistive AlxGa1−xN epilayers were successfully doped with Ge and free-electron concentration as high as 3×1019 cm−3 was achieved. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115036
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  • 10
    Electronic Resource
    Electronic Resource
    Photovoltaic effects in GaN structures with p-n junctions (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2028-2030 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large-area GaN photovoltaic structures with p-n junctions have been fabricated using atmospheric pressure metalorganic chemical vapor deposition. The photovoltaic devices typically exhibit selective spectral characteristics with two narrow peaks of opposite polarity. This can be related to p-n junction connected back-to-back with a Schottky barrier. The shape of the spectral characteristic is dependent on the thickness of the n- and p-type regions. The diffusion length of holes in the n-type GaN region, estimated by theoretical modeling of the spectral response shape, was about 0.1 μm. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114776
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