ISSN:
1063-7826
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
,
Physics
Notes:
Abstract Germanium n-type single crystals with a donor concentration of 3×1012 cm−3 were deformed at 760°C to strains of δ≤71% with a rate of 6×10−3 s−1, cooled to room temperature, and then annealed for t≤20 h at 900°C. Low-temperature static electrical conductivity due to holes trapped by dislocations and transported along a branching dislocation network was measured before and after annealing of the deformed samples. It was found that annealing enhances the dislocation-related electrical conductivity in the samples with δ〈50% and diminishes this conductivity in the samples with δ〉60%. Selective etching and X-ray diffraction analysis showed that the main structural distinction of the samples with δ〉60% is the presence of recrystallized regions. The influence of annealing on dislocation-related electrical conductivity is explained by an increase in connectedness of the dislocation network for δ〈50% and by a decrease in this connectedness in the case of δ〉60%.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.1188021
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