Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 4034-4036
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We demonstrate the usefulness of the thermally-stimulated current (TSC) technique for investigating shallow interface state defects in silicon carbide metal–oxide–semiconductor (MOS) structures. For dry oxides, low-temperature TSC measurements reveal a high density of near-interfacial oxide traps (border traps) close to the band edges of 6H–SiC. Furthermore we find that annealing the SiC/SiO2 interface in pyrogenic steam at 950 °C (reoxidation) essentially reduces the density of deep interface states, while it increases the density of shallow states. Our results agree with observations of the appearance of a negative oxide charge in reoxidized MOS capacitors and the corresponding increase of the threshold voltage in n channel metal–oxide–semiconductor field-effect transistors. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1424479
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