ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In this letter, we report on the excitation efficiency of erbium ions by hot electrons and holes in Si:Er:O and Si1−yCy:Er pn diodes at 10 K. In forward bias, a higher electroluminescence efficiency at 1.54 μm is observed for incorporating the erbium ions in the p region of the diode, where enough holes are present to form bound excitons for erbium excitation. In reverse bias, electrons turn out to be 5000 times more efficient in impact exciting of Er3+ than holes at equal space-charge region widths. A dark region of 45 nm for electrons and about 70 nm for holes is present where no erbium excitation is possible. Impact excitation of Er codoped by C is much less efficient than for O codoping. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1338955
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