Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
78 (2001), S. 3478-3480
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We investigate the relaxation of photogenerated carriers in radiation-damaged silicon on sapphire using a collinear optical-pump–terahertz-probe arrangement. Carrier densities greater than 1020 cm−3 are injected using 400 nm, 100 fs pump pulses, and the change in transmission of the terahertz-probe pulse is measured as a function of pump–probe delay. The time-dependent carrier density is deduced using a thin-film Drude model. A carrier mobility of 422±17 cm2/V s is measured, and single-exponential carrier relaxation times of 4 ps at low fluence and 6 ps at high fluence are observed. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1375841
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