Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
80 (2002), S. 911-913
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The emission properties of self-assembled InAs quantum dots (QDs) and lattice-matched GaInNAs quantum wells (QWs) emitting around 1.3 μm were investigated by temperature-dependent and time-resolved photoluminescence (PL). The QDs have much higher PL efficiency at low excitation, but saturate faster as the excitation is increased, due to the lower density of states. Lifetime measurements show that nonradiative recombination plays a more important role in the GaInNAs QW than in QDs. © 2002 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1447595
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