ISSN:
1573-1979
Keywords:
integrated circuit measurements
;
microwave measurements
;
MOSFETs
;
scattering parameters measurements
;
silicon-on-insulator technology
Source:
Springer Online Journal Archives 1860-2000
Topics:
Electrical Engineering, Measurement and Control Technology
Notes:
Abstract The maturation of low cost Silicon-on-Insulator (SOI) MOSFET technology in the microwave domain has brought about a need to develop specific characterization techniques. An original scheme is presented, which, by combining careful design of probing and calibration structures, rigorous in-situ calibration, and a new powerful direct extraction method, allows reliable identification of the parameters of the non-quasi-static small-signal model and the high-frequency noise parameters for MOSFETs. The extracted model is shown to be valid up to 40 GHz.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1008380615900
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