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  • 1
    Electronic Resource
    Electronic Resource
    Optimization of external coupling and light emission in organic light-emitting devices: modeling and experiment (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 595-604 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The emission of light and external coupling after the appropriate excitons have been formed in the organic light-emitting devices (OLEDs) has been investigated. The internally emitted light can be classified into three modes: externally emitted, substrate waveguided, and indium–tin–oxide (ITO)/organic waveguided. A combined classical and quantum mechanical microcavity model is used to calculate the distribution of light emission into these three modes in an OLED on planar substrates. The ITO/organic modes maybe suppressed due to the thinness of the ITO/organic layers. Consequently, as much as over 50% of the internally generated light is emitted externally in some structures, much greater than the ∼20% figure given by classical ray optics. This model is used to examine how this distribution varies with exciton to cathode distance, the thickness of the ITO layer, and the index of refraction of the substrate. It can also be applied to OLEDs on shaped substrates where an increase in the total external emission up to a factor of 2.3 has been demonstrated. The numerical results agree well with experimentally measured far-field intensity profiles, edge emissions, and increase in external emission due to shaped substrates. Finally, based on these results, we discuss different approaches to device optimization, depending on the fluorescence efficiency of the emitter and whether a shaped substrate is used. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1425448
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  • 2
    Electronic Resource
    Electronic Resource
    Improvement of output coupling efficiency of organic light-emitting diodes by backside substrate modification (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 1650-1652 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The emission intensity of an organic light-emitting diode at normal viewing angle and the total external emission efficiency have been increased by factors of 9.6 and 3.0, respectively, by applying spherically shaped patterns to the back of the device substrate. The technique captures light previously lost to waveguiding in the substrate and, with proper choice of substrate, light previously lost to waveguiding in the organic/anode layers. A method of applying the technique using laminated films and an optical model for evaluating coupling efficiency are also presented. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126124
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  • 3
    Electronic Resource
    Electronic Resource
    Self-organized nanodot formation on MgO(100) by ion bombardment at high temperatures (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2096-2098 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The production of self-organized, spatially dense nanodots on a MgO(100) surface by Ar+ bombardment at elevated sample temperatures (700 and 1000 °C) and ion energies in the range 0.5–5 keV is reported. The results show that at elevated temperatures, the size of the nanodots can be modified by varying the ion energy in a well-defined manner. The nanodot diameter is found to increase with increasing temperature and decrease with increasing ion flux and increasing ion energy. The dot diameter is several tens of nanometers and the height is several nanometers. These results can be interpreted in terms of a recently developed theoretical model. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1464222
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  • 4
    Electronic Resource
    Electronic Resource
    External coupling efficiency in planar organic light-emitting devices (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 1927-1929 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The external coupling efficiency in planar organic light-emitting devices is modeled based on a quantum mechanical microvavity theory and measured by examining both the far-field emission pattern and the edge emission of light trapped in the glass substrate. The external coupling efficiency is dependent upon the thickness of the indium–tin–oxide layer and the refractive index of the substrate. The coupling efficiency ranges from ∼24% to ∼52%, but in general it is much larger than the 18.9% expected from classical ray optics. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1357207
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  • 5
    Electronic Resource
    Electronic Resource
    Radiation enhanced diffusion of Ti in Al2O3 (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 5058-5064 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Titanium bulk and dislocation diffusion coefficients at 1000 °C have been determined for Ti in single crystal α-Al2O3(0001) for three types of samples: (i) Ti evaporated onto Al2O3, (ii) 48Ti+at 100 eV deposited onto Al2O3, and (iii) 48Ti+ at 100 eV deposited onto radiation damaged Al2O3 (damage inflected by implantation of 46Ti+ at 7 keV). Diffusion penetration profiles were obtained by using secondary ion mass spectrometry depth profiling techniques. For the deposited and implanted Ti+ samples, the bulk diffusion coefficients (D) are 5.4×10−21 and 5.6×10−17 m2 s−1, respectively, and dislocation diffusion coefficients are 3.6×10−17 and 1.4×10−12 m2 s−1, respectively. Comparing the D's for Ti in the undamaged and damaged Al2O3, the D's for the latter samples are higher by a factor of 104–105, reflecting the radiation enhanced diffusion due to the defect structure inflected by the implanted 7 keV 46Ti+. Comparing the D's for Ti deposited onto Al2O3 (both the evaporated and 100 eV 48Ti+ samples) with those for Cr deposited onto Al2O3, the Ti D's are larger by a factor of 10, reflecting the influence of the valence state of the cation. These results show that cationic diffusion coefficients in Al2O3 can be controlled by varying the level of defects in the crystal. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1286222
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  • 6
    Electronic Resource
    Electronic Resource
    Modification of diffusion coefficients in MgO(100) through the chemical properties of implanted ions (2001)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 115 (2001), S. 446-453 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Ti bulk diffusion coefficients have been determined for Ti in single crystal MgO(100) for four types of samples: Ti evaporated onto MgO and Ti evaporated onto MgO that was pre-bombarded with 7 keV Cl+, Ar+, and Cr+, respectively. Diffusion was induced by annealing to 1000 °C following the evaporation or pre-bombardment. Diffusion penetration profiles were obtained by using secondary ion mass spectrometry depth profiling techniques. A model that includes a depth-dependent bulk diffusion coefficient was used to analyze the observed radiation enhanced diffusion (RED) effects. The bulk diffusion coefficients are of the order of 10−20 m2/s and are enhanced due to the defect structure inflected by the ion pre-bombardment. Different RED effects for the samples pre-bombarded with Cl+, Ar+, and Cr+ were observed despite their very similar ballistic implantation parameters. The diffusion model was extended to include the effects of lattice deformation, requirement of electrical neutrality, and chemical effects such as volatile compound formation. This extended model satisfactorily explains the RED differences observed for Cl+, Ar+, and Cr+ implantation. Our results show that RED is strongly influenced by the chemical properties of implanted ions. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1376379
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  • 7
    Electronic Resource
    Electronic Resource
    A two-stage up-convertor made of AgGaSe2 and β-BBO crystals (2000)
    Springer
    Applied physics 70 (2000), S. 15-21 
    Details
    ISSN: 1432-0649
    Keywords: PACS: 42.65; 42.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract. A two-stage infrared up-convertor made of AgGaSe2 and β-BBO crystals has been built up, that can up-convert the mid-infrared radiation of 11–16 μm into the 0.8-μm range where the sensitive photomultiplier can be used. This up-convertor is pumped with a near-infrared radiation of 1.7–1.8 μm wavelength range generated by a β-BBO optical parametric oscillator. In this experiment, we also measured the o-ray refractive index of AgGaSe2 in the 11–16 μm mid-infrared range and extended the fitting range of the Sellmeier equation to the 16-μm wavelength range.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003400050003
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  • 8
    Electronic Resource
    Electronic Resource
    Cloning and expression analysis of murine lupin, a member of a novel gene family that is conserved through evolution and associated with Lupus inclusions (2000)
    Springer
    Development genes and evolution 210 (2000), S. 512-517 
    Details
    ISSN: 1432-041X
    Keywords: Key words Systemic lupus erythematosis ; AIDS ; HIV ; p36 ; Cytoplasmic inclusion
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  We describe here the first full-length sequence of a member of a novel gene family encoding a protein in the mouse that we call Lupin. Lupin is homologous to a human protein previously called p36, which was purified from α-interferon-treated cells that formed lupus inclusions. Lupus inclusions are dense intracellular deposits found in endothelial cells and lymphocytes of patients with systemic lupus erythematosis and AIDS. Proteins closely related to Lupin exist in evolutionarily divergent species including Caenorhabditis elegans, Drosophila and zebrafish. At least one other lupin-related gene is expressed in the mouse and in man. Lupin is expressed in mouse embryos and adults, notably in liver, spleen, central nervous system, multiple epithelia and all types of muscle. In skeletal muscle, expression analysis suggests that Lupin associates with the contractile apparatus.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004270000093
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  • 9
    Electronic Resource
    Electronic Resource
    Meshless methods based on collocation with radial basis functions (2000)
    Springer
    Computational mechanics 26 (2000), S. 333-343 
    Details
    ISSN: 1432-0924
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Meshless methods based on collocation with radial basis functions (RBFs) are investigated in detail in this paper. Both globally supported and compactly supported radial basis functions are used with collocation to solve partial differential equations (PDEs). Using RBFs as a meshless collocation method to solve PDEs possesses some advantages. It is a truly mesh-free method, and is space dimension independent. Furthermore, in the context of scattered data interpolation it is known that some radial basis functions have spectral convergence orders. This study shows that the accuracy of derivatives of interpolating functions are usually very poor on boundary of domain when a direct collocation method is used, therefore it will result in significant error in solving a PDE with Neumann boundary conditions. Based on this fact, a Hermite type collocation method is proposed in this paper, in which both PDEs and prescribed traction boundary conditions are imposed on prescribed traction boundary. Numerical studies shows that the Hermite type collocation method improve the accuracy significantly.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s004660000181
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  • 10
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    Structure of Escherichia coli ribosomal protein L25 complexed with a 5S rRNA fragment at 1.8-A resolution (2000)
    National Academy of Sciences
    Details
    Publication Date: 2000-02-29
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
    Published by National Academy of Sciences
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