Publication Date:
2019-07-13
Description:
Multifinger SiGe HBTs have been fabricated using a novel fully self-aligned double-mesa technology. With the novel process technology, a common-emitter 2x2x30 sq micrometer device exhibits high maximum oscillating frequency (f(sub max)) and cut-off frequency (f(sub T)) of 78 and 37 GHz, respectively. In class-A operation, a multifinger device with l0x2x30 sq micrometer emitter is expected to provide an output power of 25.6 dBm with a gain of 10 dB and a maximum power added efficiency (PAE) of 30.33% at 8 GHz.
Keywords:
Electronics and Electrical Engineering
Type:
IEEE MTT-S International Microwave Symposium; May 20, 2001 - May 25, 2001; Phoenix, AZ; United States
Format:
application/pdf
Permalink