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  • Articles  (67)
  • 2000-2004  (67)
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  • Articles  (67)
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  • 1
    Electronic Resource
    Electronic Resource
    Optical and xerographic properties of phthalocyanine codeposited composite film and ultrathin multilayered structure (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 748-752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical and xerographic properties of the phthalocyanine codeposited composite (cDC) films and ultrathin multilayered (UTML) structures have been studied. Observed UV-visible absorption spectra indicate that the Q-band absorption of the cDc films is different from that of the single component films, and from that of the UTML structures. The absorption peaks are shifted with the number and thickness of the layers. This spectral variation is most likely to be due to the dipole–dipole and charge transfer interactions among different molecular assemblies. The photosensitivity of the cDC films is superior to that of the single component films. This improvement is attributed to the efficient photoinduced charge transfer and charge separation among the composites. Moreover, the photosensitivity of the UTML structures is over tenfold better than that of the cDC films, probably due to the ultrafast photoinduced charge transfer and separation and the unipolar transport of the photogenerated holes. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1427432
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  • 2
    Electronic Resource
    Electronic Resource
    Dispersion, refinement, and manipulation of single silicon nanowires (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 1812-1814 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have successfully dispersed silicon nanowires in liquid by a mild etching treatment. A transmission electron microscopic study reveals that the etching occurs selectively at the defect sites of the wires. This implies that the treated wires have much fewer defects than those of the raw material. We have adopted an electrophoresis method, which is usually used in biosciences, to mount single nanowires onto chosen electrodes of a prototype device. The mounting of the wires was checked using scanning probe microscopes. Compared with the commonly used microactuation method, our method is far more applicable to industrial device fabrication, which may require simultaneous manipulation of a large number of wires. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1456966
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  • 3
    Electronic Resource
    Electronic Resource
    Anisotropy of superconductivity from MgB2 single crystals (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 2779-2781 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnesium diboride (MgB2) single crystals, with a maximum size of 0.5×0.5×0.02 mm3, were grown by the vapor transport method in a sealed molybdenum crucible. A superconducting transition with the onset temperature of 38.6 K was confirmed by both transport and magnetization measurements. The upper critical field anisotropy ratio, Hc2(parallel)ab(0)/Hc2(parallel)c(0), was estimated to be 2.6 from the magnetic field-temperature phase diagram for MgB2 single crystals. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1413729
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  • 4
    Electronic Resource
    Electronic Resource
    Three-dimensional carrier profiling of InP-based devices using scanning spreading resistance microscopy (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 177-179 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scanning spreading resistance microscopy (SSRM) is a carrier profiling method based on atomic force microscopy (AFM), which has proven its power for two-dimensional semiconductor device analysis in the last few years. A three-dimensional approach is presented for depth profiling on the nm scale and for device inspection from the top surface. A procedure for SSRM on the InP structure is developed, where layers a few nm thick are continuously scratched away while scanning the region of interest with a highly doped diamond tip. This extends the SSRM to the third dimension, as SSRM images taken at different depths can be combined to construct a three-dimensional image of the sample. Based on the same technology, a "depth profiling" mode is developed whereby a well-defined etched pit is made. SSRM measurements taken on the side made of the etched pit provide a carrier profile to overcome the limitations of standard cross-sectional profiling and enable profiling of the layer with nm resolution. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1490399
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  • 5
    Electronic Resource
    Electronic Resource
    Preparation of waterborne dispersions of epoxy resin by the phase-inversion emulsification technique. 2. Theoretical consideration of the phase-inversion process (2000)
    Springer
    Colloid & polymer science 278 (2000), S. 1103-1108 
    Details
    ISSN: 1435-1536
    Keywords: Key words Bisphenol A epoxy resin ; Waterborne dispersions ; Phase-inversion emulsification ; Physical method ; Mechanism
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract  A theoretical consideration of the phase-inversion technique to prepare waterborne particles based on the experimental facts of the phase inversion process given in part 1 of this series is presented. The deformation and breakup of the water droplets dispersed in an epoxy resin phase under shear action are analyzed in terms of microrheology. The interaction and coalescence dynamics among the water droplets stabilized by an interfacial layer formed by the emulsifier molecules are discussed in terms of Derjaguin–Landau–Verwey–Overbeek theory and effective collision theory, respectively. A criterion for the completion of phase-inversion is that the attraction among the water droplets exceeds the entropic repulsion. Thus, a physical model of phase-inversion is proposed to predict the effects of some control variables on the phase-inversion process as well as the structural features of the waterborne particles, by which the experimental results could be well interpreted. It is indicated that the achievement of phase inversion is determined by the dynamic coalescence among the water droplets before the phase-inversion point (PIP). If the dynamic coalescence among the water droplets is ignored, phase inversion is achieved completely and sub- micron-sized particles are prepared. In comparison, if the dynamic coalescence is significant, phase inversion is achieved incompletely and a large complex water-in-oil-in-water structure is prepared. In the case of complete phase inversion, it is shown that the size of the waterborne particles is comparable with the size of the water droplets before the PIP.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003960000376
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  • 6
    Electronic Resource
    Electronic Resource
    Photocurrent measurements for laterally resolved interface characterization (2000)
    Springer
    Fresenius' journal of analytical chemistry 367 (2000), S. 329-333 
    Details
    ISSN: 1432-1130
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology
    Notes: Abstract A miniaturized optical set-up based on a CD-ROM player optic was developed for LAPS (light addressable potentiometric sensors). A focus of 2.6 μm was achieved using this easy to handle device. The lateral resolution of LAPS measurements can be improved by using GaAs as the semiconductor material instead of Si. The diffusion length of the minority charge carriers was determined to be smaller than 3.1 μm. A new method called SPIM (scanning photo-induced impedance microscopy) is described. Using this technique, the impedance of thin films can be measured with lateral resolution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s002160000409
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  • 7
    Electronic Resource
    Electronic Resource
    Origin of Scm1 and Scm2– two loci conferring resistance to sugarcane mosaic virus (SCMV) in maize (2000)
    Springer
    Theoretical and applied genetics 100 (2000), S. 934-941 
    Details
    ISSN: 1432-2242
    Keywords: Key words Zea mays L ; Maize ; Sugarcane mosaic virus ; SCMV ; Scm1 ; Scm2 ; AFLP ; RFLP ; SSR ; Pedigree relationship
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  Sugarcane mosaic virus (SCMV) causes serious losses of grain and forage yield of maize (Zea mays L.) in Europe. Two dominant genes, Scm1 and Scm2, have been identified to confer resistance to SCMV. Scm1 is located on the short arm of chromosome 6 and Scm2 near the centromere region of chromosome 3. In the present study,resistant, partially resistant, and susceptible maize inbred lines, together with their ancestral lines, were evaluated with molecular markers to trace back the origin of Scm1 and Scm2. The banding patterns indicated that the Scm1 region, originally identified in resistant European line FAP1360A, was derived from its ancestral line FAP954A. The other two resistant European lines, D21 and D32, most likely carry the same Scm1 region, which originated from their common ancestral line A632. This Scm1 region was also present in three partially resistant lines, D09, FAP1396A and FAP693A, but not in the resistant U.S. inbred Pa405. Apart from FAP954A and A632, none of the remaining ancestral lines and none of the susceptible lines harbored the Scm1 region. The Scm2 region present in FAP1360A was obviously transmitted from its ancestral line Co125. However, the presence of the respective Scm2 region was not confirmed in the other three resistant lines (D21, D32 and Pa405), the remaining ancestral lines, and all partially resistant lines by using closely linked markers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s001220051373
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  • 8
    Electronic Resource
    Electronic Resource
    Saturation mapping of the apple scab resistance gene Vf using AFLP markers (2000)
    Springer
    Theoretical and applied genetics 101 (2000), S. 844-851 
    Details
    ISSN: 1432-2242
    Keywords: Key words Apple ; Scab resistance ; Mapping ; Vf gene ; AFLP marker
    Source: Springer Online Journal Archives 1860-2000
    Topics: Biology
    Notes: Abstract  Using the amplified fragment length polymorphism (AFLP) technique combined with a ”narrow-down” bulk segregant strategy enabled us to quickly identify 15 tightly linked AFLP markers to the Vf gene that confers resistance to the apple scab disease. High-resolution mapping placed all 15 AFLP markers within an interval of 0.6 cM around the Vf region; 7 of them were found to be inseparable from the Vf gene, 1 was localized left of, and the remaining 7 located right of the Vf gene. In addition, eight previously identified RAPD markers were also mapped, but only three, including M18, AM19, and AL07, were localized within this short interval, and none co-segregated with the Vf gene. The saturation of the Vf region with AFLP markers will accelerate both marker-assisted selection and map-based cloning. The advantages of this ”narrow-down” strategy, estimation of physical distances among AFLP markers, and their potential application are also discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s001220051551
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  • 9
    Electronic Resource
    Electronic Resource
    Preparation of waterborne dispersions of epoxy resin by the phase-inversion emulsification technique. 1. Experimental study on the phase-inversion process (2000)
    Springer
    Colloid & polymer science 278 (2000), S. 1164-1171 
    Details
    ISSN: 1435-1536
    Keywords: Key words Bisphenol A epoxy resin ; Waterborne dispersions ; Phase-inversion emulsification ; Electrical properties ; Rheological behavior
    Source: Springer Online Journal Archives 1860-2000
    Topics: Chemistry and Pharmacology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract  Waterborne dispersions of bisphenol A epoxy resin were prepared by the so-called phase-inversion emulsification technique. The electrical properties, rheological behavior and morphological evolution during the phase inversion process were characterized systematically. It was shown that both emulsifier concentration and emulsification temperature play great roles in controlling the phase inversion process as well as the structural features of the waterborne particles. A high emulsifier concentration, i.e. 10.90 wt% and a low emulsification temperature, i.e. 73 °C, facilitate complete phase inversion, in which all water droplets in the system are simultaneously transformed into the continuous phase at the phase-inversion point (PIP). In this case, sub-micron-sized, discrete waterborne particles were formed. In contrast, a complex water-in-oil-in-water structure was achieved by incomplete phase inversion at a low emulsifier concentration, i.e. 2.33 wt%, and a high temperature of 80 °C. The morphological evolution observed by scanning electron microscopy revealed that not all the water droplets in the system were converted into the continuous phase at the PIP and that some small water drops were trapped within the waterborne structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003960000375
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  • 10
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    Identification of a specific self-reactive IgM antibody that initiates intestinal ischemia/reperfusion injury (2004)
    National Academy of Sciences
    Details
    Publication Date: 2004-03-03
    Print ISSN: 0027-8424
    Electronic ISSN: 1091-6490
    Topics: Biology , Medicine , Natural Sciences in General
    Published by National Academy of Sciences
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