ISSN:
1090-6487
Keywords:
73.23.−b
;
73.40.Gk
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract The transport properties of GaAs/AlGaAs submicron rings with split gates in the conditions corresponding to the ring resistance R SD τ;h/e 2 are studied. Oscillations of R SD as a function of the gate voltage V G are experimentally observed. The oscillations are caused by the single-electron charging of two triangular conducting regions into which the ring is divided in the tunneling regime.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1134/1.568371
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