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  • 1
    Electronic Resource
    Electronic Resource
    Monomode optical waveguide in lithium niobate formed by MeV Si+ ion implantation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 5224-5226 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The monomode enhanced-index LiNbO3 waveguide fabricated by low-dose ion implantation is reported. LiNbO3 crystals were implanted with 3 MeV Si+ ions to doses around 1014 ions/cm2. After annealing, the waveguides were formed by the extraordinary refractive index enhancement in the waveguide regions. The effective extraordinary refractive index of the waveguide increased with ion implantation dose. The loss was 0.64 dB/cm in the X-cut sample with an implantation dose of 3.3×1014 ions/cm2. The scattering loss in the Z-cut samples was even lower than that in the X-cut samples. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367312
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetic properties and magneto-optical Kerr effect of Mn/Sb multilayer films on various substrates (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 8035-8037 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mn/Sb multilayer films were grown on GaAs (100), Si (100), sapphire (0001), and glass by an ultrahigh vacuum evaporation technique and subsequent annealing for a short duration. Magnetization measurements reveal strong room-temperature ferromagnetism even for unannealed films. After annealing the films show increased saturation magnetization Ms and decreased coercivity Hc. X-ray diffraction and magnetic force microscope patterns show a high-quality crystal structure of MnSb is formed and that the magnetic force distribution becomes uniform. Both polar and longitudinal magneto-optical Kerr rotations were observed for all the annealed films on various substrates and the dependence of the Kerr rotation angle on the magnetic field is similar to the magnetization hysteresis loop. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1370112
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  • 3
    Electronic Resource
    Electronic Resource
    The role of energetic electrons in self-oscillations of a discharge plasma (2001)
    [S.l.] : American Institute of Physics (AIP)
    Physics of Plasmas 8 (2001), S. 5006-5012 
    Details
    ISSN: 1089-7674
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The role of energetic electrons in periodic self-oscillations of a discharge plasma has been studied by measuring the spatiotemporal evolution of plasma potential, electron density, and electron velocity distribution function. It is found that the self-oscillation involves the instabilities of sheaths, propagation of a double layer and competition between the ionization, thermalization, and diffusion. The energetic electrons are the key factor which links these processes to form the oscillation cycle. The time interval of each phase in the cycle is estimated according to the physical process and the calculations are in agreement with experimental measurements. The study of the probe perturbation effect on the oscillations indicates that the length of the oscillation period is related to the amount of energetic electrons; the more energetic electrons, the shorter the period. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1406134
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  • 4
    Electronic Resource
    Electronic Resource
    Nonequilibrium photoresponse of YBa2Cu3O7−x granular films to 8 mm microwave radiation (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3352-3361 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Nonequilibrium photoresponse behavior has been investigated for YBa2Cu3O7−x (YBCO) granular films to 8 mm microwave radiation under various bias currents and magnetic fields. The measurements reveal that the nonequilibrium photoresponse mode occurs only in the tail region of the resistance transition curve R(T) from the normal to the superconducting state, where transportation behavior of the granular superconducting film is found to be characterized by the Kosterlitz–Thouless (KT) phase transition model. Based on the KT model, the photoresponse mechanism has been interpreted in terms of the depinning process of the unbinding vortices, which are generated from the decoupling process of the vortex–antivortex pairs by current, and are held at the intrinsic pinning sites of the granular high-Tc superconducting films at low temperature. Under the co-action of the bias current and the incident microwave photons, these unbinding vortices will be driven out of the pinning center, creating viscous motion in the Josephson junction array system. An analytical result of the unbinding vortices density n(T,I) induced by applied current has been worked out based on the model of two-dimensional Josephson junction arrays that is employed as a model system for the YBCO granular films. The distribution of the n(T,I) is found to be analogous to that of the photoresponse measured in the temperature region of 2/3TKT〈T〈TKT. Additionally, the measurements reveal that the magnitude of the photoresponse is linearly increased with an increase of the incident microwave power. These results imply that the nonequilibrium photoresponse induced by microwave irradiation may be intrinsically related to the decoupling process of the vortex–antivortex pairs, as well as to the depinning dynamics of the unbinding vortices in the granular high-Tc superconducting films. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1350625
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  • 5
    Electronic Resource
    Electronic Resource
    Influence of electrical stress voltage on cathode degradation of organic light-emitting devices (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 976-979 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Our in situ experimental observations of the influence of electrical stress voltage on organic light-emitting device growth in dark spot areas are presented. We demonstrate the use of microsized silica particles to create uniformly sized defects on the protective layer. This is an efficient way to control the location and the number of dark spots. The growth in dark spot area was studied at different driving voltages from 0 up to 11 V. Dark field microscopy was used to monitor the dark spot size below the turn-on voltage. The bright field was used at or above the turn-on voltage. Our observations indicate that dark spot growth was strongly affected by the electrical stress voltage. A linear growth rate with respect to the voltage was observed with a fitting parameter better than 99.7% when the device is driven above the turn-on voltage. We interpret the dark spot growth in terms of the diffusion of moisture and oxygen accompanied by cathode layer chemical and physical changes. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1376669
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  • 6
    Electronic Resource
    Electronic Resource
    Stabilization of electrode migration in polymer electroluminescent devices (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1119-1121 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A thin 3-nm-thick parylene layer is deposited by chemical vapor deposition at room temperature on the indium tin oxide (ITO) coated glass substrate to form a bilayer anode of an organic light emitting diode. The parylene layer forms a conformal film to cover the spikes present in the ITO film. This parylene film presents a smoother surface to the subsequent organic layers. The parylene film not only reduces the occurrence of dark spots, acting as a barrier for oxygen diffusion from either the ITO or from the atmosphere and stabilizing the migration of the electrodes during electrical stress, but also improves the injection of holes from the anode. By inserting another parylene layer in between the organic and cathode layers, the probability of formation of nonemissive areas is further reduced. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1498150
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  • 7
    Electronic Resource
    Electronic Resource
    Bubble formation due to electrical stress in organic light emitting devices (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 171-173 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The degradation in electroluminescence of poly(p-phenylene vinylene)-based organic light-emitting devices is studied using optical microscopy, scanning electron microscopy, and secondary ion mass spectroscopy. "Bubbles" are formed at the polymer and indium tin oxide interface or in the polymer layer within the nonemissive area. This formation, which occurs during device electrical stress, is accompanied by a fluctuation of the device current. The bubbles are formed by the degraded polymer and/or the gas released from disintegration of the polymer. High local current density flowing near the dark spot center and the resultant heating, decomposes the polymer layer. The resultant carbonized area causes either local short circuit and/or open circuit leading to the final light-emitting device failure. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1435064
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  • 8
    Electronic Resource
    Electronic Resource
    Photoluminescence degradation in organic light-emitting devices (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 697-699 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polymer degradation under electrical stress was studied using the device structure indium tin oxide/poly(p-phenylene vinylene)/Ca/Ag. The devices that were used in this study do not show any significant decrease in electroluminescent intensity for up to several thousand hours of operation. However for devices that were electrically stressed and then exposed to normal ambient, there was a significant decrease in the photoluminescence. Those that were not electrically stressed but exposed to normal ambient or were electrically stressed but not exposed to normal ambient, there was no significant degradation in the photoluminescence. These results showed that both conditions of electrical stress and photo-oxidation are necessary for a significant decrease of the photoluminescence intensity. Degradation is accompanied by an increase in the x-ray crystallization peak. We interpret that the photoluminescence intensity degradation is due to the change in polymer crystallinity caused by electrical stress followed by photo-oxidation. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1446209
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  • 9
    Electronic Resource
    Electronic Resource
    Correlation between dark spot growth and pinhole size in organic light-emitting diodes (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2116-2118 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Our in situ experimental observations of dark spot growth in organic light-emitting diodes using optical microscopy show a linear rate of growth for the area of all the dark spots. We used uniformly sized silica micro particles to intentionally create size-controllable pinholes on the cathode protective layer. Subsequently, we observed initial formation of dark spots as a result of these pinholes and then monitored their growth. Due to usage of particles of various diameters, we were able to linearly correlate the growth rate with pinhole size. This allows us to estimate the original pinhole sizes that gave rise to the dark spots, which we believe were initiated by "dust" particles. Our studies verify that dark spot formation is due to pinholes on the protective layer that creates pathways for water or oxygen permeation, and that dark spot growth is dependent on the pinhole sizes. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1364658
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  • 10
    Electronic Resource
    Electronic Resource
    Enhancement of transverse trapping efficiency for a metallic particle using an obstructed laser beam (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 34-36 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report that the transverse trapping efficiency for a metallic particle can be enhanced by use of a laser beam obstructed by a circular opaque disk. In the case of gold particles, the enhancement factor for a p- or s-polarized trapping beam is at least 1.7 or 2.5, respectively. The dependence of the transverse trapping efficiency for gold particles (diameter=2 μm) on the size of the obstruction is measured and agrees with the theoretical prediction based on the ray-optics model. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126868
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