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  • American Institute of Physics (AIP)  (8)
  • 2000-2004  (8)
  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 466-469 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the molecular orientation of the commonly used organic semiconductor copper phthalocyanine (CuPC) grown as thin films on the technically relevant substrates indium tin oxide, oxidized Si, and polycrystalline gold using polarization-dependent x-ray absorption spectroscopy, and compare the results with those obtained from single crystalline substrates [Au(110) and GeS(001)]. Surprisingly, the 20–50 nm thick CuPC films on the technical substrates are as highly ordered as on the single crystals. Importantly, however, the molecular orientation in the two cases is radically different: the CuPC molecules stand on the technical substrates and lie on the single crystalline substrates. The reasons for this and its consequences for our understanding of the behavior of CuPC films in devices are discussed. © 2001 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1535-1540 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present an investigation of interface properties of the hole transport material N,N′-diphenyl-N,N′-bis (3-methylphenyl)–(1,1′)–biphenyl-4,4′diamine (TPD) on indium–tin oxide (ITO) and on GeS(001) using x-ray and ultraviolet photoelectron spectroscopy. On both the TPD/ITO interface and the TPD/GeS(001) heterojunction we found shifts of the vacuum level indicating a formation of an interfacial dipole barrier. We obtained a barrier for the hole injection for TPD on Ar ion sputter-cleaned ITO of 1.5 eV which is significantly higher than the commonly cited value of 0.5 eV for ozone-oxidized ITO, whereas the interface dipole barrier of 0.3 eV is in good agreement with reported data. At low coverages of TPD on ITO additional features in the C 1s core level spectra were found, which can be ascribed to a partially oxidized TPD species at the interface. © 2000 American Institute of Physics.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 4872-4878 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the interface properties of the molecular organic semiconductor copper phthalocyanine (CuPC) on single crystalline as well as polycrystalline Au using photoemission spectroscopy. Despite the different orientation of the molecules on the two substrates, the observed energy level alignment is identical. We observe the formation of an interface dipole while band bending is very small. In addition, we have carried out complementary studies of the CuPC/GeS(001) interface to pin down photoemission final state effect contributions to the observed energy level shifts. © 2002 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3783-3792 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electronic structure of undoped and nitrogen-doped tetrahedral amorphous carbon (ta-C) has been studied using high-resolution electron energy-loss spectroscopy in transmission to determine the local bonding of the carbon and nitrogen atoms. We found that the carbon and nitrogen atoms are mainly sp3-bonded for nitrogen contents up to 10 at. %. However, the data analysis is also consistent with some N atoms occupying trivalent σ or pyrrole configurations. The real (ε1) and imaginary parts (ε2) of the dielectric function were derived over a wide energy range carrying out a Kramers–Kronig analysis of the loss spectra. The ε2 spectra show two features due to the excitation of the π and σ valence states. The π feature is very small in ta-C deposited at 100 eV, consistent with its large sp3 content (∼85%). We have determined the ratios of sp2/sp3-hybridized atoms in the samples by both the C 1s edge and the optical sum rules. © 2001 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 3131-3133 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Improved trapped fields are reported for bulk melt-textured YBa2Cu3O7−δ (YBCO) material in the temperature range between 20 and 50 K. Trapped fields up to 12.2 T were obtained at 22 K on the surface of single YBCO disks (with Ag and Zn additions). In YBCO minimagnets, maximum trapped fields of 16 T (at 24 K) and of 11,2 T (at 47 K) were achieved using (Zn+Ag) and Zn additions, respectively. In all cases, the YBCO disks were encapsulated in steel tubes in order to reinforce the material against the large tensile stress acting during the magnetizing process and to avoid cracking. We observed cracking not only during the magnetizing process, but also as a consequence of flux jumps due to thermomagnetic instabilities in the temperature range betweeen 20 and 30 K. © 2001 American Institute of Physics.
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 2107-2109 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High trapped fields were found in zinc-doped, bulk melt-textured YBa2Cu3O7−x (YBCO) material showing a pronounced peak effect in the field dependence of the critical current density. Trapped fields up to 1.1 T were found at 77 K at the surface of a YBCO disk (diameter 26 mm, height 12 mm). Very high trapped fields up to 14.35 T were achieved at 22.5 K for a YBCO disk pair (diameter 26 mm, height 24 mm) by the addition of silver and using a bandage made of stainless steel. The pinning forces and trapped fields obtained in bulk YBCO material are compared with results reported for melt-processed NdBa2Cu3O7−x and SmBa2Cu3O7−x.© 2000 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2916-2918 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a study of the interface properties between indium tin oxide (ITO) and the well-established molecular organic semiconductor copper phthalocyanine (CuPC) and its fluorinated relative copper tetraflourophthalocyanine (CuPCF4) using photoemission spectroscopy. It is shown that a strong chemical interaction occurs between the PC molecules and ITO which indicates the presence of interface states at these technically relevant interfaces. © 2002 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 80 (2002), S. 2985-2987 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Carbon nanostructures of different kinds have been synthesized by chemical vapor deposition. By modifying the deposition temperature, the catalyst material, and the hydrocarbon, nanofibers with herringbone structure, multi-walled nanotubes with tubular structure, and single-walled nanotubes were deposited. The nanostructures were purified with different treatment methods. The carbon nanostructures were characterized using scanning and transmission electron microscopy. The hydrogen storage capability was investigated for all obtained nanostructures. The measurements show that the storage capacity of hydrogen is very limited in all the carbon nanostructures. © 2002 American Institute of Physics.
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