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  • American Institute of Physics (AIP)  (2)
  • 2000-2004  (2)
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  • 1
    Electronic Resource
    Electronic Resource
    Improved refractive index formulas for the AlxGa1−xN and InyGa1−yN alloys (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 1108-1115 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed understanding of the nitride refractive indices is essential for the modeling and design of III–N laser structures. In this article, we report on the assessment of the refractive index data available for the nitride alloys and present formulas for evaluating the refractive indices for variations in both composition and photon energy. For AlxGa1−xN, an expression is given which fits well to experimental data below x〈0.38, sufficient for the molefractions found in the cladding layers of III–N lasers. Due to the almost complete lack of experimental refractive index data for InyGa1−yN, we propose an expression to give a first-order approximation for the refractive index. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1320007
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  • 2
    Electronic Resource
    Electronic Resource
    Optical and photoelectric study of mirror facets in degraded high power AlGaAs 808 nm laser diodes (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 3227-3233 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Mirror facets of broad area AlGaAs SQW 808 nm lasers with fast degradation of the output power have been investigated by photoluminescence microscopy (PLM), electroluminescence microscopy, and micro-photocurrent spectroscopy techniques. Over 2000 images of the photoluminescent light emitted from the facets of approximately 20 degraded laser bars have been made. Repeating patterns associated with the degradation have been noted and classified. Degraded lasers have dark lines on the mirror facet surface which are inclined from the epitaxial plane by 55°. Pairs of such lines often form V-shaped patterns. The orientation of the observed features suggest they are planar or line defects lying the the {111} crystallographic planes. The defects demonstrate a reduction in the lifetime of nonequilibrium electron–hole pairs and increased density of states in the forbidden gap of the active region of the laser structure, and are directly related to laser failure. Observations of the evolution in size and contrast of PLM patterns with ageing suggest the defects were initially created in the active region side of the laser structures during crystal growth or during the mounting procedure, and later propagate in the {111} planes, stimulated by the lasing action. We interpret the V formation to be a way to relax a compressive strain in the epitaxial plane. A dislocation on the {111} planes could actually translate the portion of the crystal bounded by the V upwards (away from the mounting of the crystal), in response to compressive strain. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372328
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