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  • 1
    Electronic Resource
    Electronic Resource
    Quantitative imaging of magnetization reversal in FeGd multilayers by magnetic transmission x-ray microscopy (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 6478-6480 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A multilayered FeGd system sputtered on a Si3N4-membrane was used to demonstrate that magnetic transmission x-ray microscopy enables the imaging of the domain structure with high resolution in a quantitative way and in varying external magnetic fields. The field-dependent evolution of sub-100 nm out-of-plane magnetized domains, i.e., the transition from stripe into bubble domains, could be observed in detail. It has been shown that critical fields like the bubble collapse field can be described by a wall energy model. Contrary to the assumption of the theory, the magnetization does not remain perpendicular to the film plane in all cases. This is only true inside the bubbles. In the stripe domains the magnetic moments rotate. Their angle could be measured as a function of the external applied field. Internal stray fields can cause a rotation of moments leading to a contrast at the edges of stripe domains. The results indicate that the magnetization reversal in 3d/4f multilayers is not only determined by wall motions and is therefore more complex than previously assumed. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372743
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  • 2
    Electronic Resource
    Electronic Resource
    Magnetization reversal of a multilayered FeGd dot array imaged by transmission x-ray microscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7162-7164 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetization reversal of an array of 1 μm squared FeGd dots has been studied by magnetic transmission x-ray microscopy (MTXM). A (4 Å Fe/4Å Gd)×75 multilayered FeGd system has been prepared on a 30 nm thin Si3N4 membrane by sputtering and structured by optical lithography and ion beam etching techniques. Both the domain structure within each single dot and the collective switching behavior could be observed with MTXM. A large variation in the nucleation field of the dots was found and can be attributed to the shape of the dots. A correlation between the nucleation field and the perimeter of each dot could be deduced. Hysteresis loops of individual dots are derived, taking into account the proportionality of the dichroic contrast to the magnetization of the sample. The stepped profile of the magnetization loop of a single dot is found to be clearly distinct from a continuous film. The high lateral resolution and the possibility to record the images in varying external magnetic fields proves that MTXM is a highly adapted tool to investigate nanostructured magnetic systems. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355334
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  • 3
    Electronic Resource
    Electronic Resource
    Study of in-plane magnetic domains with magnetic transmission x-ray microscopy (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 7159-7161 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetic transmission x-ray microscopy is a novel technique to image element specifically magnetic domain structures. A lateral resolution down to 25 nm is provided by the Fresnel zone plates used as optical elements in soft x-ray microscopy. The magnetic contrast is given by x-ray magnetic circular dichroism, i.e., large magnetic contributions up to 25% to the absorption cross section of circularly polarized x rays that occur in the vicinity of, e.g., the Fe L3,2 edges (706 and 719 eV) and depend on the relative orientation of the projection of the magnetization of the sample onto the photon propagation direction. Thus, both in-plane and out-of-plane contributions to the magnetization are accessible. Here we present images of the magnetic domain structure of a (3 nm Cr/50 nm Fe/6 nm Cr) thin film system with a preferentially in-plane magnetization recorded at the Fe L edges. The samples have been prepared by thermal evaporation onto a 100 nm thin Si3N4 membrane and were mounted under a tilt of 30° with respect to the transmission direction of the photons in the full-field microscope. Corresponding images taken under a tilt of 0° ruled out out-of-plane contributions. Images recorded in applied varying external magnetic fields allowed to study the switching behavior. These trial results have a large impact on further investigations of nanostructured magnetic systems, e.g., spintronic devices and magnetic sensors with magnetic soft x-ray microscopy. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1355333
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  • 4
    Electronic Resource
    Electronic Resource
    A 3He refrigerated scanning tunneling microscope in high magnetic fields and ultrahigh vacuum (2000)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 71 (2000), S. 1475-1478 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We present a scanning tunneling microscope (STM) designed to operate between 275 mK and room temperature, in magnetic fields up to 14 T and in ultrahigh vacuum (UHV). The system features a compact STM connected to an UHV compatible 3He refrigerator fitting into a bottom loading cryostat with a superconducting magnet. In this configuration, the cryostat is sitting on top of the UHV chamber, resulting in a very short distance between the STM access and the experimental position. It further enables proper thermal anchoring of the entire STM setup, allowing millikelvin temperatures to be reached in true UHV conditions. We achieve a hold time of about 40 h at 275 mK and a turnaround time of 10 h between room and base temperature. We demonstrate atomic resolution and present tunneling spectra obtained at 275 mK on the high-Tc superconductors Bi2Sr2CaCu2O8+δ and YBa2Cu3O7−δ. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1150483
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization and application of an externally mounted catalytic converter for aircraft measurements of NOy (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 3051-3057 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A novel design for an airborne NOy converter was implemented, characterized in the laboratory, and used extensively for in situ tropospheric and stratospheric measurements of total reactive nitrogen (NOy). During field deployments, the converter is mounted outside the aircraft fuselage, avoiding the need for an inlet line. In flight, the converter can be calibrated by the addition of standard gases close to the sample inlet, compensating for any changes in the instrument sensitivity caused by changing operating conditions. The system has been used successfully during several Stratosphere Troposphere Experiments by Aircraft Measurements campaigns in the lowermost stratosphere and upper troposphere for the measurement of total reactive nitrogen. The detection limit of the system is approximately 100 pptv for 10 s integrated data (2σ). The precision, deduced from the reproducibility of the in-flight calibrations, is 7% and the accuracy is about 30%. Laboratory studies demonstrate that interference from HCN, NH3, and CH3CN is negligible for background conditions. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1488680
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  • 6
    Electronic Resource
    Electronic Resource
    Effective medium theory for large particulate size composites (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 4486-4490 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The present study extends our previous work that concerned the effective permittivities and absorptivities of particulate composites consisting of graphite-type microsphere inclusions in a dielectric matrix, and their suitability as radar-absorbing materials. Whereas in that work spheres of one size (radius a=50 μm) had been considered only, we here study the dependence of the results on the sphere radius of up to one or several millimeters, and find sizable effects on permittivities for a≥1 mm, and below that for the absorptivities, indicating the increasing importance of multiple scattering effects. While the multiple-scattering formulas utilized here are based on a low-frequency approximation, we devise a modification of these formulas in order to extend their validity to higher frequencies (or larger particle sizes). © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1352683
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  • 7
    Electronic Resource
    Electronic Resource
    Slip-free processing of 300 mm silicon batch wafers (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 87 (2000), S. 1543-1549 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Under gravitational and thermal constraints of integrated-circuit (IC) process technology, 300-mm-diam silicon wafers can deform via slip dislocation generation and propagation, degrading the electrical characteristics of the leading edge device. We present a force balance model to describe the strain relaxation in large wafer diameter, which includes heat transfer effects and the upper yield point of the silicon material. The material attributes, such as oxygen content and the state of oxygen aggregation, are taken into account. The theoretical approach allows the calculation of wafer mechanics and ramp rate profiles for an arbitrary high-temperature process. Plastic deformation of silicon wafers caused by thermal stresses at high temperatures can be controlled by process design. Deformation due to gravitational forces can be prevented through appropriate equipment design. The quantitative theory proposed here provides guidance for computer simulation to configure stable slip-free wafer process flow under mechanical and thermal loads. Applications include high speed simulation of "what if?" experiments, and initial simulations of large scale experimental sequences. The simulator developed can also be used by IC manufacturers to determine optimum wafer throughput and cycle times in front-end device processes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.372047
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  • 8
    Electronic Resource
    Electronic Resource
    Epitaxial MgO layer for low-resistance and coupling-free magnetic tunnel junctions (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 1035-1037 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxially grown magnetic tunnel junctions MgO(100)/Fe/MgO/Fe/Co/Pd have been elaborated by molecular beam epitaxy, with insulating layer thickness down to 0.8 nm. The continuity of this layer was checked at different spatial scales by means of morphological (high resolution transmission electronic microscopy), electric (local impedance), and magnetic (magnetoresistance and hysteresis loop) measurements. These junctions show a low resistance (4 kΩ μm2), tunnel magnetoresistance up to 17%, and a very small interlayer magnetic coupling. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1498153
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  • 9
    Electronic Resource
    Electronic Resource
    High single-mode power observed from a coupled-resonator vertical-cavity laser diode (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 4079-4081 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report a monolithic coupled-resonator vertical-cavity laser with an ion-implanted top cavity and a selectively oxidized bottom cavity which exhibits single fundamental-mode operation. The output powers are as high as 6.1 mW with side mode suppression ratios greater than 30 dB. The sizes of the implant and oxide current apertures are shown to be important for demonstrating the required selectivity for the fundamental lasing mode. With a fixed bias current on the implant cavity and increasing oxide cavity current, mode switching from single-mode operation to multimode operation and back to single-mode operation was observed. The intensities of the fundamental and first transverse modes were calculated by solving a set of multimode rate equations. The calculation indicates that the observed mode switching can be identified with changes in the optical length of the oxide cavity with increasing pump current. The observed mode dynamics are unique to coupled-resonator vertical-cavity lasers. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1426254
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  • 10
    Electronic Resource
    Electronic Resource
    A full-band Monte Carlo model for the temperature dependence of electron and hole transport in silicon (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 583-585 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A full-band Monte Carlo transport model for silicon is presented that achieves excellent quantitative agreement with the temperature, field, and crystal direction dependences of experimental electron and hole drift velocities from 20 to 500 K. The model is based on wave-vector-dependent phonon scattering rates, for which a unique set of only two empirical deformation potentials for each carrier type has been determined from the experiments. Numerical accuracy is obtained by a variable Brillouin zone discretization. We discuss discrepancies between different experimental low-field electron mobilities at 77 K showing that the value should be 26 100 cm2/(V s) instead of the often quoted 20 800 cm2/(V s). For holes, we show that the inclusion of inelastic intravalley acoustic phonons cannot be restricted to low temperatures, but is essential for a correct transport description even at room temperature. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125824
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