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  • American Institute of Physics (AIP)  (3)
  • 2000-2004  (3)
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  • 1
    Electronic Resource
    Electronic Resource
    Effect of nitridation on magnetic properties of Fe53Pt47 thin film (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3145-3149 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Fe53Pt47 thin films with varying thickness were prepared using dc magnetron sputtering at various substrate temperatures (i.e., from 250 to 600 °C) on to CrMo seeded glass substrates. The powder x-ray diffraction studies reveal that the ordered fct γ2-FePt phase begins to appear starting from the substrate temperature of 250 °C. The estimated ordering parameters show that the films prepared at 300 °C are well ordered and ordering parameters increase slowly as increasing substrate temperatures. On nitridation of the Fe53Pt47 thin films, expansion of the face centered tetragonal crystal lattice along the c axis is observed. The saturation magnetization is decreased with decreasing film thickness. This has been explained mainly on the basis of size and surface effects of nanocrystals in the films including intergranular interactions. Maximum coercivity of 8.7 kOe is observed for the film thickness of 350 nm. The drastic decrease in magnetization with the increase in nitridation time duration has been attributed to the spin pairing effects as a result of electron supply from interstitial nitrogen atoms to the 3d bands of iron atoms. We observed an increase of Hc from 7.8 kOe for non-nitrided Fe53Pt47 film to 10.8 kOe for a 3 h nitrided film. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1436301
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  • 2
    Electronic Resource
    Electronic Resource
    Optical properties and structure of tellurium–germanium– bismuth–antimony compounds with fast phase-change capability (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 3290-3294 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Quaternary TeGeBiSb amorphous films, 100 nm in thickness, were prepared by rf sputtering onto either a Si (100) or polycarbonate substrate. Crystalline films were obtained by subsequent annealing at 300 °C for 10 min. At least two phases with hexagonal and rhombohedral structures were identified by x-ray diffractometry in the quaternary system. Their compositions are close to formulas Te5Ge4Bi4Sb and Te5Ge4Bi7Sb, with c/a ratios of 5.5 and 9.4, respectively. The Te5Ge4Bi4Sb film shows a reasonable reflectivity contrast ranging from 20% to 25% in the whole visible spectrum, while the reflectivity contrast of Te5Ge4Bi7Sb film shows a sharp lowering tendency with decreasing wavelength and turns negative at wavelengths smaller than 470 nm. Results of thermal analyses show that the films crystallize at around 236–266 °C with corresponding activation energies 2.67–2.88 eV. The change in reflectivity contrast is explained based on the variation in optical band gaps of the TeGeBiSb materials with either Bi content or annealing temperature. These materials may find applicability in reversible type phase-change optical recording. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1348327
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  • 3
    Electronic Resource
    Electronic Resource
    Giant magnetoresistance enhancement in spin valves with nano-oxide layers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 6928-6930 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetoresistance (MR) ratio is enhanced by 35% by inserting the nano-oxide layer (NOL) at the Ta/Co interface in the FeMn-based top spin valves (Ta/NOL/Co/Cu/Co/FeMn/Ta). The enhancement is attributed to specular reflection, resulting in a large resistance change and small sheet resistance. However, the formation of NOL at the interface of Ta/Co suppresses the (111) texture, resulting in small exchange fields. Top spin valves with NOLs show good thermal stability up to 200 °C annealing. The MR ratio is further increased after annealing at temperatures below 200 °C. Enhancement of the MR ratio by 61% can be achieved by annealing at 150 °C. For bottom spin valves (Ta/NiFe/FeMn/Co/Cu/NiFe/Ta), NOLs formed at FeMn/Co and NiFe/Ta interfaces increase MR ratios, but NOLs at Co/Cu or Cu/NiFe deteriorate the differential spin scattering and significantly reduce MR ratios. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1356717
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